NO134235B - - Google Patents
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- Publication number
- NO134235B NO134235B NO3996/71A NO399671A NO134235B NO 134235 B NO134235 B NO 134235B NO 3996/71 A NO3996/71 A NO 3996/71A NO 399671 A NO399671 A NO 399671A NO 134235 B NO134235 B NO 134235B
- Authority
- NO
- Norway
- Prior art keywords
- transistor
- flip
- flop circuit
- transistors
- volts
- Prior art date
Links
- 210000000352 storage cell Anatomy 0.000 claims description 32
- 210000004027 cell Anatomy 0.000 claims description 22
- 230000005669 field effect Effects 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000009795 derivation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 241001191009 Gymnomyza Species 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HLXGRHNZZSMNRX-UHFFFAOYSA-M sodium;3-(n-ethyl-3,5-dimethylanilino)-2-hydroxypropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC(C)=CC(C)=C1 HLXGRHNZZSMNRX-UHFFFAOYSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356017—Bistable circuits using additional transistors in the input circuit
- H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Shift Register Type Memory (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8619170A | 1970-11-02 | 1970-11-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
NO134235B true NO134235B (ja) | 1976-05-24 |
NO134235C NO134235C (ja) | 1976-09-01 |
Family
ID=22196900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO3996/71A NO134235C (ja) | 1970-11-02 | 1971-10-28 |
Country Status (19)
Country | Link |
---|---|
US (1) | US3651492A (ja) |
JP (1) | JPS5217978B1 (ja) |
AR (1) | AR203076A1 (ja) |
AT (1) | AT321004B (ja) |
AU (1) | AU445396B2 (ja) |
BE (1) | BE774738A (ja) |
BR (1) | BR7107233D0 (ja) |
CA (1) | CA963576A (ja) |
CH (1) | CH539918A (ja) |
DE (1) | DE2154025C3 (ja) |
DK (1) | DK133026C (ja) |
ES (1) | ES396464A1 (ja) |
FR (1) | FR2112393B1 (ja) |
GB (1) | GB1313068A (ja) |
NL (1) | NL7115021A (ja) |
NO (1) | NO134235C (ja) |
SE (1) | SE364797B (ja) |
SU (1) | SU513650A3 (ja) |
ZA (1) | ZA716823B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
US3764825A (en) * | 1972-01-10 | 1973-10-09 | R Stewart | Active element memory |
AT335777B (de) * | 1972-12-19 | 1977-03-25 | Siemens Ag | Regenerierschaltung fur binarsignale nach art eines getasteten flipflops |
US4168537A (en) * | 1975-05-02 | 1979-09-18 | Tokyo Shibaura Electric Co., Ltd. | Nonvolatile memory system enabling nonvolatile data transfer during power on |
JPS5228824A (en) * | 1975-08-29 | 1977-03-04 | Toshiba Corp | Multiple storage unit |
US4095281A (en) * | 1976-03-04 | 1978-06-13 | Rca Corporation | Random access-erasable read only memory cell |
US4175291A (en) * | 1976-08-16 | 1979-11-20 | Ncr Corporation | Non-volatile random access memory cell |
US4193128A (en) * | 1978-05-31 | 1980-03-11 | Westinghouse Electric Corp. | High-density memory with non-volatile storage array |
US4224686A (en) * | 1978-10-02 | 1980-09-23 | Ncr Corporation | Electrically alterable memory cell |
US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
JPH03284364A (ja) * | 1990-03-29 | 1991-12-16 | Matsushita Electric Ind Co Ltd | 空気清浄器の放電器 |
US5640114A (en) * | 1995-12-27 | 1997-06-17 | Vlsi Technology, Inc. | Versatile select and hold scan flip-flop |
US9640228B2 (en) * | 2014-12-12 | 2017-05-02 | Globalfoundries Inc. | CMOS device with reading circuit |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3508211A (en) * | 1967-06-23 | 1970-04-21 | Sperry Rand Corp | Electrically alterable non-destructive readout field effect transistor memory |
US3530443A (en) * | 1968-11-27 | 1970-09-22 | Fairchild Camera Instr Co | Mos gated resistor memory cell |
US3549911A (en) * | 1968-12-05 | 1970-12-22 | Rca Corp | Variable threshold level field effect memory device |
US3579204A (en) * | 1969-03-24 | 1971-05-18 | Sperry Rand Corp | Variable conduction threshold transistor memory circuit insensitive to threshold deviations |
-
1970
- 1970-11-02 US US86191A patent/US3651492A/en not_active Expired - Lifetime
-
1971
- 1971-09-14 CA CA122,840A patent/CA963576A/en not_active Expired
- 1971-10-11 GB GB4717971A patent/GB1313068A/en not_active Expired
- 1971-10-12 ZA ZA716823A patent/ZA716823B/xx unknown
- 1971-10-14 AU AU34578/71A patent/AU445396B2/en not_active Expired
- 1971-10-22 SE SE13459/71A patent/SE364797B/xx unknown
- 1971-10-28 ES ES396464A patent/ES396464A1/es not_active Expired
- 1971-10-28 NO NO3996/71A patent/NO134235C/no unknown
- 1971-10-29 BR BR7233/71A patent/BR7107233D0/pt unknown
- 1971-10-29 AT AT934571A patent/AT321004B/de not_active IP Right Cessation
- 1971-10-29 BE BE774738A patent/BE774738A/xx unknown
- 1971-10-29 DE DE2154025A patent/DE2154025C3/de not_active Expired
- 1971-11-01 NL NL7115021A patent/NL7115021A/xx unknown
- 1971-11-01 SU SU1710821A patent/SU513650A3/ru active
- 1971-11-01 DK DK532871A patent/DK133026C/da active
- 1971-11-02 FR FR7139156A patent/FR2112393B1/fr not_active Expired
- 1971-11-02 JP JP46087548A patent/JPS5217978B1/ja active Pending
- 1971-11-02 CH CH1592971A patent/CH539918A/de not_active IP Right Cessation
- 1971-11-21 AR AR238790A patent/AR203076A1/es active
Also Published As
Publication number | Publication date |
---|---|
DK133026C (da) | 1976-08-09 |
NL7115021A (ja) | 1972-05-04 |
JPS5217978B1 (ja) | 1977-05-19 |
DE2154025C3 (de) | 1975-11-20 |
DE2154025A1 (de) | 1972-05-18 |
DE2154025B2 (ja) | 1975-04-03 |
AT321004B (de) | 1975-05-10 |
ES396464A1 (es) | 1975-02-16 |
SU513650A3 (ru) | 1976-05-05 |
ZA716823B (en) | 1972-06-28 |
AU445396B2 (en) | 1974-02-21 |
GB1313068A (en) | 1973-04-11 |
BE774738A (fr) | 1972-02-14 |
CA963576A (en) | 1975-02-25 |
NO134235C (ja) | 1976-09-01 |
FR2112393A1 (ja) | 1972-06-16 |
DK133026B (da) | 1976-03-08 |
SE364797B (ja) | 1974-03-04 |
AR203076A1 (es) | 1975-08-14 |
BR7107233D0 (pt) | 1973-04-10 |
US3651492A (en) | 1972-03-21 |
AU3457871A (en) | 1973-04-19 |
FR2112393B1 (ja) | 1976-09-03 |
CH539918A (de) | 1973-07-31 |
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