ZA716823B - Binary storage circuit - Google Patents

Binary storage circuit

Info

Publication number
ZA716823B
ZA716823B ZA716823A ZA716823A ZA716823B ZA 716823 B ZA716823 B ZA 716823B ZA 716823 A ZA716823 A ZA 716823A ZA 716823 A ZA716823 A ZA 716823A ZA 716823 B ZA716823 B ZA 716823B
Authority
ZA
South Africa
Prior art keywords
storage circuit
binary storage
binary
circuit
storage
Prior art date
Application number
ZA716823A
Other languages
English (en)
Inventor
G Lockwood
Original Assignee
Ncr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ncr filed Critical Ncr
Publication of ZA716823B publication Critical patent/ZA716823B/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Shift Register Type Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
ZA716823A 1970-11-02 1971-10-12 Binary storage circuit ZA716823B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8619170A 1970-11-02 1970-11-02

Publications (1)

Publication Number Publication Date
ZA716823B true ZA716823B (en) 1972-06-28

Family

ID=22196900

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA716823A ZA716823B (en) 1970-11-02 1971-10-12 Binary storage circuit

Country Status (19)

Country Link
US (1) US3651492A (ja)
JP (1) JPS5217978B1 (ja)
AR (1) AR203076A1 (ja)
AT (1) AT321004B (ja)
AU (1) AU445396B2 (ja)
BE (1) BE774738A (ja)
BR (1) BR7107233D0 (ja)
CA (1) CA963576A (ja)
CH (1) CH539918A (ja)
DE (1) DE2154025C3 (ja)
DK (1) DK133026C (ja)
ES (1) ES396464A1 (ja)
FR (1) FR2112393B1 (ja)
GB (1) GB1313068A (ja)
NL (1) NL7115021A (ja)
NO (1) NO134235C (ja)
SE (1) SE364797B (ja)
SU (1) SU513650A3 (ja)
ZA (1) ZA716823B (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
US3764825A (en) * 1972-01-10 1973-10-09 R Stewart Active element memory
AT335777B (de) * 1972-12-19 1977-03-25 Siemens Ag Regenerierschaltung fur binarsignale nach art eines getasteten flipflops
US4168537A (en) * 1975-05-02 1979-09-18 Tokyo Shibaura Electric Co., Ltd. Nonvolatile memory system enabling nonvolatile data transfer during power on
JPS5228824A (en) * 1975-08-29 1977-03-04 Toshiba Corp Multiple storage unit
US4095281A (en) * 1976-03-04 1978-06-13 Rca Corporation Random access-erasable read only memory cell
US4175291A (en) * 1976-08-16 1979-11-20 Ncr Corporation Non-volatile random access memory cell
US4193128A (en) * 1978-05-31 1980-03-11 Westinghouse Electric Corp. High-density memory with non-volatile storage array
US4224686A (en) * 1978-10-02 1980-09-23 Ncr Corporation Electrically alterable memory cell
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
JPH03284364A (ja) * 1990-03-29 1991-12-16 Matsushita Electric Ind Co Ltd 空気清浄器の放電器
US5640114A (en) * 1995-12-27 1997-06-17 Vlsi Technology, Inc. Versatile select and hold scan flip-flop
US9640228B2 (en) * 2014-12-12 2017-05-02 Globalfoundries Inc. CMOS device with reading circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508211A (en) * 1967-06-23 1970-04-21 Sperry Rand Corp Electrically alterable non-destructive readout field effect transistor memory
US3530443A (en) * 1968-11-27 1970-09-22 Fairchild Camera Instr Co Mos gated resistor memory cell
US3549911A (en) * 1968-12-05 1970-12-22 Rca Corp Variable threshold level field effect memory device
US3579204A (en) * 1969-03-24 1971-05-18 Sperry Rand Corp Variable conduction threshold transistor memory circuit insensitive to threshold deviations

Also Published As

Publication number Publication date
DK133026C (da) 1976-08-09
NL7115021A (ja) 1972-05-04
JPS5217978B1 (ja) 1977-05-19
NO134235B (ja) 1976-05-24
DE2154025C3 (de) 1975-11-20
DE2154025A1 (de) 1972-05-18
DE2154025B2 (ja) 1975-04-03
AT321004B (de) 1975-05-10
ES396464A1 (es) 1975-02-16
SU513650A3 (ru) 1976-05-05
AU445396B2 (en) 1974-02-21
GB1313068A (en) 1973-04-11
BE774738A (fr) 1972-02-14
CA963576A (en) 1975-02-25
NO134235C (ja) 1976-09-01
FR2112393A1 (ja) 1972-06-16
DK133026B (da) 1976-03-08
SE364797B (ja) 1974-03-04
AR203076A1 (es) 1975-08-14
BR7107233D0 (pt) 1973-04-10
US3651492A (en) 1972-03-21
AU3457871A (en) 1973-04-19
FR2112393B1 (ja) 1976-09-03
CH539918A (de) 1973-07-31

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