NO125420B - - Google Patents

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Publication number
NO125420B
NO125420B NO3446/69A NO344669A NO125420B NO 125420 B NO125420 B NO 125420B NO 3446/69 A NO3446/69 A NO 3446/69A NO 344669 A NO344669 A NO 344669A NO 125420 B NO125420 B NO 125420B
Authority
NO
Norway
Prior art keywords
hall element
semiconductor body
conductors
hall
pole shoes
Prior art date
Application number
NO3446/69A
Other languages
English (en)
Inventor
H Bergmans
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of NO125420B publication Critical patent/NO125420B/no

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Landscapes

  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Description

Halvlederanordning.
Oppfinnelsen angår en halvlederanofdning med et halvlederlegeme, et gitterverk av ledere som inneholder et stotteorgan for halvlederlegemet, elektriske forbindelser mellom kontaktstedene for halvlederlegemet og én ende av lederne og en kappe av syntetisk materiale for halvlederlegemet, stotteorganet og en del av lederne, hvor halvlederlegemet inneholder et Hall-element og en hjelpekrets for Hall-elementet.
Halvlederlegemer med særlig liten tykkelse, som har hoy mobilitet for de frie ladningsbærere, f.eks. indiumantimonid, indium-arsenid blir blant annet benyttet som Hall-elementer. I dette tilfelle kan ikke en forsterker for Hall-elementet integreres i halvlederlegemet. Det er også kjent at man benytter halvlederlegemer, f.eks. en plate av silicium som substrat for Hall-elementet. I dette tilfelle kan bikretsen faktisk integreres i halvlederlegemet. En enkel fremstillingsprosess muliggjores, dermed oppnås en fordelaktig drift av Hall-effekt-enheten også. Disse Hall-effekt-enheter kan med fordel benyttes f.eks. i kommutatorlose elektriske motorer hvor strom-men gjennom viklingene: sluttes, og brytes ved hjelp av Hall-elementer.
Det er onskelig å fremstille den nevnte Hall-effekt-enhet i en innkapsling, som beskytter enheten mot ytre påvirkninger. Innkapslingen må ha en solid konstruksjon slik at enheten kan hånd-teres med letthet". Muligheten, for å kunne frembringe et transversalt magnetisk felt med tilstrekkelig styrke i området for Hall-elementet må være tilstede. Med dette magnetiske felt kan elektriske Hall-signaler frembringes. For å oppnå dette er,ifolge oppfinnelsen kappen over og under Hall-elementet forsynt med utsparinger for magnetiske polsko som strekker seg til umiddelbar nærhet av Hall-elementet, hvilke utsparinger konvergerer i retning av Hall-elementet. Ifolge oppfinnelsen gjor innkapslingen det således mulig å oppnå- et transversalt magnetisk felt av tilstrekkelig feltstyrke slik at god virke-måte av Hall-effekt-enheten sikres.
Fortrinnsvis er det i hver utsparing anordnet stykker av ferromagnetisk materiale som er opptatt i kappen og danner polsko for magnetfeltet. Ved denne konstruksjonsmåte kan polskoene allerede inngå i Hall-effekt-enheten hvilket kan være en fordel i mange tilfelle.
To utforelseseksempler på oppfinnelsen skal forklares nær-mere under henvisning til tegningene. Fig. 1 viser 1 grunnriss et nett av ledere hvor halvlederlegemet er plasert. Fig. 2 og viser respektivt et snitt langs linjen II-II på fig. 1 og et grunnriss av en innkapslet enhet, ifolge oppfinnelsen. Fig. 4 viser et snitt langs linjen. II-II' på fig. 1 av Hall-eff ekt-enheten hvor polskoene inngår i innkapslingen.
På fig. 1 inngår i et nett 1 et antall ledere 2. Dette nett består fortrinnsvis av en tynn plate av jern-nikkel legering. En av lederne 2 har en bredere seksjon 3, hvor et halvlederlegeme 4 i form av en tynn plate inngår. Dette halvlederlegeme kan fortrinnsvis bestå av et silicium-monokrystall som innbefatter en integrert krets bestående av et Hall-element og en forsterkerkrets for Hall-signalet. Hall-elementet 5 plasseres i senteret av halvlederlegemet 4 og. dette er vist med strekede linjer. Kontaktstedene 6 på halvlederlegemet er elektrisk forbundet med lederne 2 på nettet med gull-tråder 7• Trådene 7 er plassert slik at de ikke rager hoyere enn Hall-elementet 5-
Delen, som på denne måte er dannet, er innesluttet i en innkapsling 8 av et syntetisk materiale. Denne innkapslede Hall-eff ekt-enhet er vist på fig. 2 og Den del av nettverket r-.l som tjener til å holde lederne i den onskede posisjon under fremstillingen av Hall-effekt-enheten, blir fjernet. Ved innkapsling, f.eks. i en stopeform, er matrisen utstyrt med kontakt-tapper som strekker seg opp til den umiddelbare nærhet av halvlederlegemet og som er plassert noyaktig over og under det sted hvor Hall-elementet 5 befinner seg.
På denne måte dannes fordypninger 9 i innkapslingen av syntetisk materiale. Disse fordypninger gjor det mulig å plassere polskoene 10 av en magnet i den umiddelbare nærhet av Hall-elementet, slik at et sterkt transversalt magnetisk felt kan dannes i området av Hall-elementet. Med dette elektriske felt kan elektriske Hall-signaler gene-reres .
Det er alternativt mulig å innleire de ferromagnetiske polskoene i innkapslingen. Fig. 4 viser et eksempel på dette. Som vist kan polskoene 10 forlenges opptil den ytre overflate av innkapslingen 8 av syntetisk materiale, men om onskelig kan den også stikke litt ut av innkapslingen.
Fordypningen 9 er vist konisk, men ée kan ha en hvilken som helst form. En gradvis konvergerende form av polskoene er imid-lertid gunstig for å oppnå en konsentrasjon av den magnetiske fluks i området med Hall-elementet.

Claims (2)

1. Halvlederanordning med et halvlederlegeme, et : gitterverk av ledere som inneholder et stotteorgan for halvlederlegemet, elektriske forbinde]ær mellom kontaktstedene for halvlederlegemet og én ende av lederne og en kappe av syntetisk materiale for halvlederlegemet, stotteorganet og en del av lederne, hvor halvlederlegemet inneholder et Hall-element og en hjelpekrets for Hall-elementet, karakterisert ved at kappen over og under Hall-elementet er forsynt med utsparinger for magnetiske polsko som strekker seg til umiddelbar nærhet av Hall-elementet, hvilke utsparinger konvergerer i retning av Hall-elementet.
2. Halvlederanordning ifolge krav 1, karakterisert ved at det i hver utsparing er anordnet stykker av ferromagnetisk materiale som er opptatt i kappen og danner polsko for magnetfeltet.
NO3446/69A 1968-08-31 1969-08-28 NO125420B (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6812451A NL6812451A (no) 1968-08-31 1968-08-31

Publications (1)

Publication Number Publication Date
NO125420B true NO125420B (no) 1972-09-04

Family

ID=19804517

Family Applications (1)

Application Number Title Priority Date Filing Date
NO3446/69A NO125420B (no) 1968-08-31 1969-08-28

Country Status (12)

Country Link
US (1) US3667000A (no)
AT (1) AT308199B (no)
BE (1) BE738220A (no)
CH (1) CH502703A (no)
DE (1) DE1942810C3 (no)
DK (1) DK124365B (no)
ES (1) ES370984A1 (no)
FR (1) FR2017194A1 (no)
GB (1) GB1270316A (no)
NL (1) NL6812451A (no)
NO (1) NO125420B (no)
SE (1) SE341226B (no)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3800193A (en) * 1972-09-05 1974-03-26 Ibm Magnetic sensing device
JPS529515B2 (no) * 1972-11-08 1977-03-16
US3845445A (en) * 1973-11-12 1974-10-29 Ibm Modular hall effect device
DE3172553D1 (en) * 1980-11-28 1985-11-07 Toshiba Kk Method for manufacturing a module for a fiber optic link
DE3243039A1 (de) * 1982-11-22 1984-05-24 Telefunken electronic GmbH, 6000 Frankfurt Magnetempfindliches halbleiterbauelement
US5017804A (en) * 1987-07-23 1991-05-21 Siliconix Incorporated Hall sensing of bond wire current
DE4305439C2 (de) * 1993-02-23 1999-10-21 Eldo Elektronik Service Gmbh Umkapselung für einen elektronischen Sensor zur Feldstärkemessung
US5587857A (en) * 1994-10-18 1996-12-24 International Business Machines Corporation Silicon chip with an integrated magnetoresistive head mounted on a slider
US5883567A (en) * 1997-10-10 1999-03-16 Analog Devices, Inc. Packaged integrated circuit with magnetic flux concentrator
DE102012202179B4 (de) 2012-02-14 2021-09-23 Robert Bosch Gmbh Magnetfeldsensor und Verfahren zum Herstellen eines Magnetfeldsensors
CN109387681B (zh) * 2018-12-28 2024-08-13 杭州思泰微电子有限公司 基于磁场检测的双通道电流传感器结构

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2877394A (en) * 1959-03-10 Hall effect device
GB1118284A (no) *
US3050698A (en) * 1960-02-12 1962-08-21 Bell Telephone Labor Inc Semiconductor hall effect devices
CH385681A (de) * 1960-09-29 1964-12-15 Siemens Ag Einrichtung zur Übermittlung von Steuerbefehlen, insbesondere für Förderanlagen oder dergleichen
US3239786A (en) * 1963-05-09 1966-03-08 Gen Precision Inc Hall generator and method of fabrication
US3413713A (en) * 1965-06-18 1968-12-03 Motorola Inc Plastic encapsulated transistor and method of making same

Also Published As

Publication number Publication date
BE738220A (no) 1970-03-02
US3667000A (en) 1972-05-30
GB1270316A (en) 1972-04-12
SE341226B (no) 1971-12-20
DK124365B (da) 1972-10-09
CH502703A (de) 1971-01-31
FR2017194A1 (no) 1970-05-22
DE1942810A1 (de) 1970-03-05
NL6812451A (no) 1970-03-03
DE1942810C3 (de) 1978-06-01
ES370984A1 (es) 1971-08-01
AT308199B (de) 1973-06-25
DE1942810B2 (de) 1977-10-06

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