NO120434B - - Google Patents
Download PDFInfo
- Publication number
- NO120434B NO120434B NO168757*1A NO16875767A NO120434B NO 120434 B NO120434 B NO 120434B NO 16875767 A NO16875767 A NO 16875767A NO 120434 B NO120434 B NO 120434B
- Authority
- NO
- Norway
- Prior art keywords
- zone
- base
- emitter
- layer
- collector
- Prior art date
Links
- 238000009413 insulation Methods 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 13
- 230000007704 transition Effects 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6609002A NL6609002A (pt) | 1966-06-29 | 1966-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO120434B true NO120434B (pt) | 1970-10-19 |
Family
ID=19797000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO168757*1A NO120434B (pt) | 1966-06-29 | 1967-06-26 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3482150A (pt) |
| AT (1) | AT278094B (pt) |
| BE (1) | BE700582A (pt) |
| CH (1) | CH465063A (pt) |
| DK (1) | DK119715B (pt) |
| ES (1) | ES342362A1 (pt) |
| GB (1) | GB1193113A (pt) |
| NL (1) | NL6609002A (pt) |
| NO (1) | NO120434B (pt) |
| SE (1) | SE326776B (pt) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3911468A (en) * | 1970-05-22 | 1975-10-07 | Kyoichiro Fujikawa | Magnetic-to-electric conversion semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3183576A (en) * | 1962-06-26 | 1965-05-18 | Ibm | Method of making transistor structures |
| US3302076A (en) * | 1963-06-06 | 1967-01-31 | Motorola Inc | Semiconductor device with passivated junction |
| DE1464921B2 (de) * | 1963-10-03 | 1971-10-07 | Fujitsu Ltd , Kawasaki, Kanagawa (Japan) | Verfahren zum herstellen einer halbleiteranordnung |
| DE1273698B (de) * | 1964-01-08 | 1968-07-25 | Telefunken Patent | Halbleiteranordnung |
| US3363152A (en) * | 1964-01-24 | 1968-01-09 | Westinghouse Electric Corp | Semiconductor devices with low leakage current across junction |
| NL134388C (pt) * | 1964-05-15 | 1900-01-01 | ||
| US3305913A (en) * | 1964-09-11 | 1967-02-28 | Northern Electric Co | Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating |
-
1966
- 1966-06-29 NL NL6609002A patent/NL6609002A/xx unknown
-
1967
- 1967-06-14 US US646041A patent/US3482150A/en not_active Expired - Lifetime
- 1967-06-26 CH CH904067A patent/CH465063A/de unknown
- 1967-06-26 GB GB29402/67A patent/GB1193113A/en not_active Expired
- 1967-06-26 NO NO168757*1A patent/NO120434B/no unknown
- 1967-06-26 DK DK330567AA patent/DK119715B/da unknown
- 1967-06-26 AT AT592567A patent/AT278094B/de not_active IP Right Cessation
- 1967-06-26 SE SE09157/67*A patent/SE326776B/xx unknown
- 1967-06-27 ES ES342362A patent/ES342362A1/es not_active Expired
- 1967-06-27 BE BE700582D patent/BE700582A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1193113A (en) | 1970-05-28 |
| NL6609002A (pt) | 1968-01-02 |
| US3482150A (en) | 1969-12-02 |
| DE1614261A1 (de) | 1970-05-27 |
| DE1614261B2 (de) | 1972-07-13 |
| BE700582A (pt) | 1967-12-27 |
| AT278094B (de) | 1970-01-26 |
| ES342362A1 (es) | 1968-10-16 |
| DK119715B (da) | 1971-02-15 |
| CH465063A (de) | 1968-11-15 |
| SE326776B (pt) | 1970-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3858237A (en) | Semiconductor integrated circuit isolated through dielectric material | |
| US3138747A (en) | Integrated semiconductor circuit device | |
| GB1144328A (en) | Solid-state circuit consisting of a semiconductor body with active components, passive components, and conducting paths | |
| US3448344A (en) | Mosaic of semiconductor elements interconnected in an xy matrix | |
| NO168757B (no) | Skvettlapp. | |
| GB1203086A (en) | Ohmic contact and electrical lead for semiconductor devices | |
| ES474421A1 (es) | Un dispositivo semiconductor de alto rendimiento. | |
| US3300832A (en) | Method of making composite insulatorsemiconductor wafer | |
| GB920628A (en) | Improvements in semiconductive switching arrays and methods of making the same | |
| GB1154805A (en) | Monolithic Semiconductor Microcircuits with Improved Means for Connecting Points of Common Potential | |
| US3404321A (en) | Transistor body enclosing a submerged integrated resistor | |
| US3789503A (en) | Insulated gate type field effect device and method of making the same | |
| GB1069755A (en) | Improvements in or relating to semiconductor devices | |
| JPS5669844A (en) | Manufacture of semiconductor device | |
| US3595714A (en) | Method of manufacturing a semiconductor device comprising a field-effect transistor | |
| JPS56162864A (en) | Semiconductor device | |
| NO120434B (pt) | ||
| GB1336301A (en) | Capacitor structure | |
| US3370204A (en) | Composite insulator-semiconductor wafer | |
| GB1135555A (en) | Improvements in or relating to semiconductor devices | |
| GB1182325A (en) | Improvements in and relating to Semiconductor devices | |
| US3482152A (en) | Semiconductor devices having a field effect transistor structure | |
| GB1182324A (en) | Improvements in or relating to Semiconductor Matrices | |
| US3576477A (en) | Insulated gate fet with selectively doped thick and thin insulators | |
| GB1146603A (en) | Method of producing a solid-state circuit |