NO119600B - - Google Patents

Download PDF

Info

Publication number
NO119600B
NO119600B NO66163424A NO16342466A NO119600B NO 119600 B NO119600 B NO 119600B NO 66163424 A NO66163424 A NO 66163424A NO 16342466 A NO16342466 A NO 16342466A NO 119600 B NO119600 B NO 119600B
Authority
NO
Norway
Prior art keywords
sinter
disc
semiconductor
metal
plate
Prior art date
Application number
NO66163424A
Other languages
English (en)
Norwegian (no)
Inventor
F Kuhrt
H Schreiner
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NO119600B publication Critical patent/NO119600B/no

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
  • Powder Metallurgy (AREA)
NO66163424A 1965-06-22 1966-06-13 NO119600B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0097721 1965-06-22

Publications (1)

Publication Number Publication Date
NO119600B true NO119600B (enExample) 1970-06-08

Family

ID=7520937

Family Applications (1)

Application Number Title Priority Date Filing Date
NO66163424A NO119600B (enExample) 1965-06-22 1966-06-13

Country Status (12)

Country Link
US (1) US3858096A (enExample)
AT (1) AT263941B (enExample)
BE (1) BE682817A (enExample)
CH (1) CH449780A (enExample)
DE (1) DE1514483B2 (enExample)
DK (1) DK135650B (enExample)
ES (1) ES328163A1 (enExample)
FR (1) FR1484261A (enExample)
GB (1) GB1132748A (enExample)
NL (1) NL6608661A (enExample)
NO (1) NO119600B (enExample)
SE (1) SE316536B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2014289A1 (de) * 1970-03-25 1971-10-14 Semikron Gleichrichterbau Scheibenförmiges Halbleiterbauele ment und Verfahren zu seiner Herstellung
NL7203094A (enExample) * 1971-03-11 1972-09-13
GB1506735A (en) * 1975-03-21 1978-04-12 Westinghouse Brake & Signal Semiconductor devices
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
DE2556469C3 (de) * 1975-12-15 1978-09-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement mit Druckkontakt
CS182611B1 (en) * 1976-03-18 1978-04-28 Pavel Reichel Power semiconducting element
US4392153A (en) * 1978-05-01 1983-07-05 General Electric Company Cooled semiconductor power module including structured strain buffers without dry interfaces
JPS57130441A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Integrated circuit device
US4769744A (en) * 1983-08-04 1988-09-06 General Electric Company Semiconductor chip packages having solder layers of enhanced durability
JPH0642337Y2 (ja) * 1984-07-05 1994-11-02 三菱電機株式会社 半導体装置
EP0638928B1 (de) * 1993-08-09 1998-10-14 Siemens Aktiengesellschaft Leistungs-Halbleiterbauelement mit Druckkontakt
US6727524B2 (en) * 2002-03-22 2004-04-27 Kulite Semiconductor Products, Inc. P-n junction structure
US7534979B2 (en) 2004-05-14 2009-05-19 Mitsubishi Denki Kabushiki Kaisha Pressure-contact type rectifier with contact friction reducer
WO2006063539A1 (de) * 2004-12-17 2006-06-22 Siemens Aktiengesellschaft Halbleiterschaltmodul
DE102008055137A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
JP6845444B1 (ja) * 2019-10-15 2021-03-17 千住金属工業株式会社 接合材、接合材の製造方法及び接合体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264799A (enExample) * 1960-06-21
US3293508A (en) * 1964-04-21 1966-12-20 Int Rectifier Corp Compression connected semiconductor device
US3413532A (en) * 1965-02-08 1968-11-26 Westinghouse Electric Corp Compression bonded semiconductor device

Also Published As

Publication number Publication date
ES328163A1 (es) 1967-04-01
BE682817A (enExample) 1966-12-20
SE316536B (enExample) 1969-10-27
CH449780A (de) 1968-01-15
DE1514483A1 (de) 1970-03-26
GB1132748A (en) 1968-11-06
DK135650B (da) 1977-05-31
FR1484261A (fr) 1967-06-09
DK135650C (enExample) 1977-10-31
NL6608661A (enExample) 1966-12-23
AT263941B (de) 1968-08-12
US3858096A (en) 1974-12-31
DE1514483B2 (de) 1971-05-06

Similar Documents

Publication Publication Date Title
NO119600B (enExample)
US3437887A (en) Flat package encapsulation of electrical devices
JP6430007B2 (ja) 半導体装置および半導体装置の製造方法
US4680618A (en) Package comprising a composite metal body brought into contact with a ceramic member
US9601679B2 (en) Thermoelectric module and method of manufacturing the same
JP5837697B2 (ja) 太径ワイヤ又はストリップに接するための金属成形体を備えたパワー半導体チップ及びその製造方法
CN106816384B (zh) 制作层的方法和器件
CA2259846A1 (en) Press contact type semiconductor device, and converter using same
US10115646B2 (en) Semiconductor arrangement, semiconductor system and method of forming a semiconductor arrangement
WO2017132462A1 (en) Semiconductor packaging structure and package having stress release structure
JPH01256140A (ja) 基板に半導体デバイスを固着する方法及び装置
CN104465566A (zh) 半导体装置、制造多个芯片组件和制造半导体装置的方法
KR20180112809A (ko) 기판 플레이트 제조 방법, 기판 플레이트, 반도체 모듈 제조 방법 및 반도체 모듈
US20110193098A1 (en) High voltage high package pressure semiconductor package
US3581163A (en) High-current semiconductor rectifier assemblies
CN108701671A (zh) 制造电路载体的方法、电路载体、制造半导体模块的方法和半导体模块
US3800192A (en) Semiconductor circuit element with pressure contact means
US3292056A (en) Thermally stable semiconductor device with an intermediate plate for preventing flashover
US9768036B2 (en) Power semiconductor substrates with metal contact layer and method of manufacture thereof
US3450962A (en) Pressure electrical contact assembly for a semiconductor device
JP2003347487A (ja) 半導体装置
JP2021027288A (ja) 半導体装置及び半導体装置の製造方法
US9978711B2 (en) Method for connecting a semiconductor chip metal surface of a substrate by means of two contact metallization layers and method for producing an electronic module
US3950778A (en) Semiconductor device and case member
US3315136A (en) Encapsulated semiconductor device