NO115782B - - Google Patents

Info

Publication number
NO115782B
NO115782B NO163423A NO16342366A NO115782B NO 115782 B NO115782 B NO 115782B NO 163423 A NO163423 A NO 163423A NO 16342366 A NO16342366 A NO 16342366A NO 115782 B NO115782 B NO 115782B
Authority
NO
Norway
Prior art keywords
rectifier element
layer
outer layer
inner layer
stated
Prior art date
Application number
NO163423A
Other languages
English (en)
Norwegian (no)
Inventor
A Herlet
H Patalong
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NO115782B publication Critical patent/NO115782B/no

Links

Classifications

    • H10W72/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W72/073—
    • H10W72/07336—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
NO163423A 1965-06-15 1966-06-13 NO115782B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES97625A DE1274245B (de) 1965-06-15 1965-06-15 Halbleiter-Gleichrichterdiode fuer Starkstrom

Publications (1)

Publication Number Publication Date
NO115782B true NO115782B (enExample) 1968-12-02

Family

ID=7520867

Family Applications (1)

Application Number Title Priority Date Filing Date
NO163423A NO115782B (enExample) 1965-06-15 1966-06-13

Country Status (11)

Country Link
US (1) US3439239A (enExample)
JP (1) JPS4841072B1 (enExample)
AT (1) AT254986B (enExample)
BE (1) BE682361A (enExample)
CH (1) CH442532A (enExample)
DE (1) DE1274245B (enExample)
DK (1) DK121386B (enExample)
GB (1) GB1079309A (enExample)
NL (1) NL6608289A (enExample)
NO (1) NO115782B (enExample)
SE (1) SE333609B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2323592C2 (de) * 1972-06-09 1981-09-17 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor
US3945028A (en) * 1973-04-26 1976-03-16 Westinghouse Electric Corporation High speed, high power plasma thyristor circuit
DE2608432C3 (de) * 1976-03-01 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Leistungsdiode
EP0186140B1 (de) * 1984-12-27 1989-09-27 Siemens Aktiengesellschaft Halbleiter-Leistungsschalter
CN111739808B (zh) * 2020-07-07 2024-03-29 黄山市恒悦电子有限公司 一种环保螺栓型电力电子整流芯片成型工艺

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL272752A (enExample) * 1960-12-20
DE1182353C2 (de) * 1961-03-29 1973-01-11 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper
NL290930A (enExample) * 1963-03-29

Also Published As

Publication number Publication date
DK121386B (da) 1971-10-11
JPS4841072B1 (enExample) 1973-12-04
NL6608289A (enExample) 1966-12-16
DE1274245B (de) 1968-08-01
US3439239A (en) 1969-04-15
GB1079309A (en) 1967-08-16
BE682361A (enExample) 1966-12-12
CH442532A (de) 1967-08-31
AT254986B (de) 1967-06-12
SE333609B (enExample) 1971-03-22

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