AT254986B - Halbleitergleichrichterelement für Starkstrom - Google Patents

Halbleitergleichrichterelement für Starkstrom

Info

Publication number
AT254986B
AT254986B AT259366A AT259366A AT254986B AT 254986 B AT254986 B AT 254986B AT 259366 A AT259366 A AT 259366A AT 259366 A AT259366 A AT 259366A AT 254986 B AT254986 B AT 254986B
Authority
AT
Austria
Prior art keywords
rectifier element
heavy current
semiconductor rectifier
semiconductor
heavy
Prior art date
Application number
AT259366A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT254986B publication Critical patent/AT254986B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
AT259366A 1965-06-15 1966-03-18 Halbleitergleichrichterelement für Starkstrom AT254986B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES97625A DE1274245B (de) 1965-06-15 1965-06-15 Halbleiter-Gleichrichterdiode fuer Starkstrom

Publications (1)

Publication Number Publication Date
AT254986B true AT254986B (de) 1967-06-12

Family

ID=7520867

Family Applications (1)

Application Number Title Priority Date Filing Date
AT259366A AT254986B (de) 1965-06-15 1966-03-18 Halbleitergleichrichterelement für Starkstrom

Country Status (11)

Country Link
US (1) US3439239A (de)
JP (1) JPS4841072B1 (de)
AT (1) AT254986B (de)
BE (1) BE682361A (de)
CH (1) CH442532A (de)
DE (1) DE1274245B (de)
DK (1) DK121386B (de)
GB (1) GB1079309A (de)
NL (1) NL6608289A (de)
NO (1) NO115782B (de)
SE (1) SE333609B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE7317598U (de) * 1972-06-09 1974-04-04 Bbc Ag Halbleiterbauelement
US3945028A (en) * 1973-04-26 1976-03-16 Westinghouse Electric Corporation High speed, high power plasma thyristor circuit
DE2608432C3 (de) * 1976-03-01 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Leistungsdiode
EP0186140B1 (de) * 1984-12-27 1989-09-27 Siemens Aktiengesellschaft Halbleiter-Leistungsschalter
CN111739808B (zh) * 2020-07-07 2024-03-29 黄山市恒悦电子有限公司 一种环保螺栓型电力电子整流芯片成型工艺

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL272752A (de) * 1960-12-20
DE1182353C2 (de) * 1961-03-29 1973-01-11 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper
NL290930A (de) * 1963-03-29

Also Published As

Publication number Publication date
JPS4841072B1 (de) 1973-12-04
US3439239A (en) 1969-04-15
DK121386B (da) 1971-10-11
DE1274245B (de) 1968-08-01
NO115782B (de) 1968-12-02
BE682361A (de) 1966-12-12
GB1079309A (en) 1967-08-16
NL6608289A (de) 1966-12-16
SE333609B (de) 1971-03-22
CH442532A (de) 1967-08-31

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