NO115782B - - Google Patents

Info

Publication number
NO115782B
NO115782B NO163423A NO16342366A NO115782B NO 115782 B NO115782 B NO 115782B NO 163423 A NO163423 A NO 163423A NO 16342366 A NO16342366 A NO 16342366A NO 115782 B NO115782 B NO 115782B
Authority
NO
Norway
Prior art keywords
rectifier element
layer
outer layer
inner layer
stated
Prior art date
Application number
NO163423A
Other languages
English (en)
Norwegian (no)
Inventor
A Herlet
H Patalong
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NO115782B publication Critical patent/NO115782B/no

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01015Phosphorus [P]
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    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
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    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
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    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
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    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]
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    • H01L2924/01Chemical elements
    • H01L2924/01051Antimony [Sb]
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    • H01L2924/01074Tungsten [W]
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    • H01L2924/01Chemical elements
    • H01L2924/01076Osmium [Os]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
NO163423A 1965-06-15 1966-06-13 NO115782B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES97625A DE1274245B (de) 1965-06-15 1965-06-15 Halbleiter-Gleichrichterdiode fuer Starkstrom

Publications (1)

Publication Number Publication Date
NO115782B true NO115782B (de) 1968-12-02

Family

ID=7520867

Family Applications (1)

Application Number Title Priority Date Filing Date
NO163423A NO115782B (de) 1965-06-15 1966-06-13

Country Status (11)

Country Link
US (1) US3439239A (de)
JP (1) JPS4841072B1 (de)
AT (1) AT254986B (de)
BE (1) BE682361A (de)
CH (1) CH442532A (de)
DE (1) DE1274245B (de)
DK (1) DK121386B (de)
GB (1) GB1079309A (de)
NL (1) NL6608289A (de)
NO (1) NO115782B (de)
SE (1) SE333609B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE7317598U (de) * 1972-06-09 1974-04-04 Bbc Ag Halbleiterbauelement
US3945028A (en) * 1973-04-26 1976-03-16 Westinghouse Electric Corporation High speed, high power plasma thyristor circuit
DE2608432C3 (de) * 1976-03-01 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Leistungsdiode
DE3573357D1 (en) * 1984-12-27 1989-11-02 Siemens Ag Semiconductor power switch
CN111739808B (zh) * 2020-07-07 2024-03-29 黄山市恒悦电子有限公司 一种环保螺栓型电力电子整流芯片成型工艺

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL272752A (de) * 1960-12-20
DE1182353C2 (de) * 1961-03-29 1973-01-11 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper
NL298354A (de) * 1963-03-29

Also Published As

Publication number Publication date
JPS4841072B1 (de) 1973-12-04
US3439239A (en) 1969-04-15
AT254986B (de) 1967-06-12
DE1274245B (de) 1968-08-01
GB1079309A (en) 1967-08-16
BE682361A (de) 1966-12-12
DK121386B (da) 1971-10-11
CH442532A (de) 1967-08-31
NL6608289A (de) 1966-12-16
SE333609B (de) 1971-03-22

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