SE333609B - - Google Patents
Info
- Publication number
- SE333609B SE333609B SE08097/66A SE809766A SE333609B SE 333609 B SE333609 B SE 333609B SE 08097/66 A SE08097/66 A SE 08097/66A SE 809766 A SE809766 A SE 809766A SE 333609 B SE333609 B SE 333609B
- Authority
- SE
- Sweden
Links
Classifications
-
- H10W72/30—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/00—
-
- H10W72/073—
-
- H10W72/07336—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES97625A DE1274245B (de) | 1965-06-15 | 1965-06-15 | Halbleiter-Gleichrichterdiode fuer Starkstrom |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE333609B true SE333609B (enExample) | 1971-03-22 |
Family
ID=7520867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE08097/66A SE333609B (enExample) | 1965-06-15 | 1966-06-14 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3439239A (enExample) |
| JP (1) | JPS4841072B1 (enExample) |
| AT (1) | AT254986B (enExample) |
| BE (1) | BE682361A (enExample) |
| CH (1) | CH442532A (enExample) |
| DE (1) | DE1274245B (enExample) |
| DK (1) | DK121386B (enExample) |
| GB (1) | GB1079309A (enExample) |
| NL (1) | NL6608289A (enExample) |
| NO (1) | NO115782B (enExample) |
| SE (1) | SE333609B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2323592C2 (de) * | 1972-06-09 | 1981-09-17 | BBC AG Brown, Boveri & Cie., Baden, Aargau | Thyristor |
| US3945028A (en) * | 1973-04-26 | 1976-03-16 | Westinghouse Electric Corporation | High speed, high power plasma thyristor circuit |
| DE2608432C3 (de) * | 1976-03-01 | 1981-07-09 | Siemens AG, 1000 Berlin und 8000 München | Leistungsdiode |
| EP0186140B1 (de) * | 1984-12-27 | 1989-09-27 | Siemens Aktiengesellschaft | Halbleiter-Leistungsschalter |
| CN111739808B (zh) * | 2020-07-07 | 2024-03-29 | 黄山市恒悦电子有限公司 | 一种环保螺栓型电力电子整流芯片成型工艺 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL272752A (enExample) * | 1960-12-20 | |||
| DE1182353C2 (de) * | 1961-03-29 | 1973-01-11 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper |
| NL290930A (enExample) * | 1963-03-29 |
-
1965
- 1965-06-15 DE DES97625A patent/DE1274245B/de active Pending
-
1966
- 1966-03-18 AT AT259366A patent/AT254986B/de active
- 1966-03-31 CH CH466366A patent/CH442532A/de unknown
- 1966-05-06 GB GB20294/66A patent/GB1079309A/en not_active Expired
- 1966-05-07 DK DK234466AA patent/DK121386B/da unknown
- 1966-06-10 BE BE682361A patent/BE682361A/xx unknown
- 1966-06-13 NO NO163423A patent/NO115782B/no unknown
- 1966-06-14 US US557515A patent/US3439239A/en not_active Expired - Lifetime
- 1966-06-14 SE SE08097/66A patent/SE333609B/xx unknown
- 1966-06-15 JP JP41038789A patent/JPS4841072B1/ja active Pending
- 1966-06-15 NL NL6608289A patent/NL6608289A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DK121386B (da) | 1971-10-11 |
| JPS4841072B1 (enExample) | 1973-12-04 |
| NL6608289A (enExample) | 1966-12-16 |
| NO115782B (enExample) | 1968-12-02 |
| DE1274245B (de) | 1968-08-01 |
| US3439239A (en) | 1969-04-15 |
| GB1079309A (en) | 1967-08-16 |
| BE682361A (enExample) | 1966-12-12 |
| CH442532A (de) | 1967-08-31 |
| AT254986B (de) | 1967-06-12 |