JPS4841072B1 - - Google Patents

Info

Publication number
JPS4841072B1
JPS4841072B1 JP41038789A JP3878966A JPS4841072B1 JP S4841072 B1 JPS4841072 B1 JP S4841072B1 JP 41038789 A JP41038789 A JP 41038789A JP 3878966 A JP3878966 A JP 3878966A JP S4841072 B1 JPS4841072 B1 JP S4841072B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP41038789A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4841072B1 publication Critical patent/JPS4841072B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H10W72/30
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P95/00
    • H10W72/073
    • H10W72/07336

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP41038789A 1965-06-15 1966-06-15 Pending JPS4841072B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES97625A DE1274245B (de) 1965-06-15 1965-06-15 Halbleiter-Gleichrichterdiode fuer Starkstrom

Publications (1)

Publication Number Publication Date
JPS4841072B1 true JPS4841072B1 (enExample) 1973-12-04

Family

ID=7520867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP41038789A Pending JPS4841072B1 (enExample) 1965-06-15 1966-06-15

Country Status (11)

Country Link
US (1) US3439239A (enExample)
JP (1) JPS4841072B1 (enExample)
AT (1) AT254986B (enExample)
BE (1) BE682361A (enExample)
CH (1) CH442532A (enExample)
DE (1) DE1274245B (enExample)
DK (1) DK121386B (enExample)
GB (1) GB1079309A (enExample)
NL (1) NL6608289A (enExample)
NO (1) NO115782B (enExample)
SE (1) SE333609B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111739808A (zh) * 2020-07-07 2020-10-02 黄山市恒悦电子有限公司 一种环保螺栓型电力电子整流芯片成型工艺

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2323592C2 (de) * 1972-06-09 1981-09-17 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor
US3945028A (en) * 1973-04-26 1976-03-16 Westinghouse Electric Corporation High speed, high power plasma thyristor circuit
DE2608432C3 (de) * 1976-03-01 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Leistungsdiode
EP0186140B1 (de) * 1984-12-27 1989-09-27 Siemens Aktiengesellschaft Halbleiter-Leistungsschalter

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL272752A (enExample) * 1960-12-20
DE1182353C2 (de) * 1961-03-29 1973-01-11 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper
NL290930A (enExample) * 1963-03-29

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111739808A (zh) * 2020-07-07 2020-10-02 黄山市恒悦电子有限公司 一种环保螺栓型电力电子整流芯片成型工艺
CN111739808B (zh) * 2020-07-07 2024-03-29 黄山市恒悦电子有限公司 一种环保螺栓型电力电子整流芯片成型工艺

Also Published As

Publication number Publication date
DK121386B (da) 1971-10-11
NL6608289A (enExample) 1966-12-16
NO115782B (enExample) 1968-12-02
DE1274245B (de) 1968-08-01
US3439239A (en) 1969-04-15
GB1079309A (en) 1967-08-16
BE682361A (enExample) 1966-12-12
CH442532A (de) 1967-08-31
AT254986B (de) 1967-06-12
SE333609B (enExample) 1971-03-22

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