NL8700282A - Ladingsgekoppelde inrichting en camera voorzien van een dergelijke inrichting. - Google Patents
Ladingsgekoppelde inrichting en camera voorzien van een dergelijke inrichting. Download PDFInfo
- Publication number
- NL8700282A NL8700282A NL8700282A NL8700282A NL8700282A NL 8700282 A NL8700282 A NL 8700282A NL 8700282 A NL8700282 A NL 8700282A NL 8700282 A NL8700282 A NL 8700282A NL 8700282 A NL8700282 A NL 8700282A
- Authority
- NL
- Netherlands
- Prior art keywords
- charge
- coupled device
- blocking
- potential
- voltage
- Prior art date
Links
- 230000000903 blocking effect Effects 0.000 claims abstract description 25
- 238000005036 potential barrier Methods 0.000 claims description 20
- 239000002800 charge carrier Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000005670 electromagnetic radiation Effects 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 28
- 230000004888 barrier function Effects 0.000 description 13
- 230000010354 integration Effects 0.000 description 13
- 230000001965 increasing effect Effects 0.000 description 12
- 108091006146 Channels Proteins 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 3
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 101150106885 VAB2 gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Cameras In General (AREA)
- Holo Graphy (AREA)
- Photoreceptors In Electrophotography (AREA)
- Studio Devices (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8700282A NL8700282A (nl) | 1987-02-06 | 1987-02-06 | Ladingsgekoppelde inrichting en camera voorzien van een dergelijke inrichting. |
| US07/147,850 US4849814A (en) | 1987-02-06 | 1988-01-25 | Charge-coupled device having overexposure control |
| DE3850271T DE3850271T2 (de) | 1987-02-06 | 1988-02-03 | Ladungsverschiebeanordnung und Kamera mit einer solchen Anordnung. |
| EP88200183A EP0278565B1 (en) | 1987-02-06 | 1988-02-03 | Charge-coupled device and camera provided with such a device |
| JP63022140A JP2677579B2 (ja) | 1987-02-06 | 1988-02-03 | 電荷結合装置及びこの装置を具えるカメラ |
| AT88200183T ATE107798T1 (de) | 1987-02-06 | 1988-02-03 | Ladungsverschiebeanordnung und kamera mit einer solchen anordnung. |
| IE880290A IE880290L (en) | 1987-02-06 | 1988-02-03 | Charge-coupled device and camera provided with such a device |
| AU11352/88A AU1135288A (en) | 1987-02-06 | 1988-02-05 | Charge-coupled device and camera provided with such a device |
| KR1019880001057A KR0128504B1 (ko) | 1987-02-06 | 1988-02-05 | 전하결합 장치 및 카메라 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8700282 | 1987-02-06 | ||
| NL8700282A NL8700282A (nl) | 1987-02-06 | 1987-02-06 | Ladingsgekoppelde inrichting en camera voorzien van een dergelijke inrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8700282A true NL8700282A (nl) | 1988-09-01 |
Family
ID=19849526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8700282A NL8700282A (nl) | 1987-02-06 | 1987-02-06 | Ladingsgekoppelde inrichting en camera voorzien van een dergelijke inrichting. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4849814A (ja) |
| EP (1) | EP0278565B1 (ja) |
| JP (1) | JP2677579B2 (ja) |
| KR (1) | KR0128504B1 (ja) |
| AT (1) | ATE107798T1 (ja) |
| AU (1) | AU1135288A (ja) |
| DE (1) | DE3850271T2 (ja) |
| IE (1) | IE880290L (ja) |
| NL (1) | NL8700282A (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02155378A (ja) * | 1988-12-07 | 1990-06-14 | Nec Corp | 固体撮像素子の駆動方法 |
| US5051832A (en) * | 1990-02-12 | 1991-09-24 | Eastman Kodak Company | Selective operation in interlaced and non-interlaced modes of interline transfer CCD image sensing device |
| US5055667A (en) * | 1990-06-21 | 1991-10-08 | Loral Fairchild Corporation | Non-linear photosite response in CCD imagers |
| JPH04260370A (ja) * | 1991-02-14 | 1992-09-16 | Sony Corp | 固体撮像装置 |
| JPH04291887A (ja) * | 1991-03-20 | 1992-10-15 | Sony Corp | 電荷転送装置 |
| EP0601638B1 (en) * | 1992-12-09 | 2000-07-26 | Koninklijke Philips Electronics N.V. | Charge-coupled device |
| US5929471A (en) * | 1997-05-30 | 1999-07-27 | Dalsa, Inc. | Structure and method for CCD sensor stage selection |
| US5990503A (en) * | 1998-01-14 | 1999-11-23 | Dalsa, Inc. | Selectable resolution CCD sensor |
| US6100552A (en) * | 1998-01-14 | 2000-08-08 | Dalsa, Inc. | Multi-tapped bi-directional CCD readout register |
| US6921897B1 (en) | 2000-09-21 | 2005-07-26 | Lockheed Martin Corporation | Circuit and method for varying the integration time of moving charges from a photodetector |
| JP3878575B2 (ja) * | 2003-04-28 | 2007-02-07 | 松下電器産業株式会社 | 固体撮像装置及びその駆動方法 |
| US20050212936A1 (en) * | 2004-03-25 | 2005-09-29 | Eastman Kodak Company | Extended dynamic range image sensor with fixed pattern noise reduction |
| JP4330607B2 (ja) * | 2005-12-26 | 2009-09-16 | 三洋電機株式会社 | 固体撮像装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182381A (ja) * | 1982-04-19 | 1983-10-25 | Sanyo Electric Co Ltd | 固体撮像素子 |
| US4663669A (en) * | 1984-02-01 | 1987-05-05 | Canon Kabushiki Kaisha | Image sensing apparatus |
| JPS6157181A (ja) * | 1984-08-28 | 1986-03-24 | Sharp Corp | 固体撮像装置 |
| DE3570806D1 (en) * | 1984-12-24 | 1989-07-06 | Toshiba Kk | Solid state image sensor |
-
1987
- 1987-02-06 NL NL8700282A patent/NL8700282A/nl not_active Application Discontinuation
-
1988
- 1988-01-25 US US07/147,850 patent/US4849814A/en not_active Expired - Lifetime
- 1988-02-03 IE IE880290A patent/IE880290L/xx unknown
- 1988-02-03 JP JP63022140A patent/JP2677579B2/ja not_active Expired - Fee Related
- 1988-02-03 AT AT88200183T patent/ATE107798T1/de not_active IP Right Cessation
- 1988-02-03 EP EP88200183A patent/EP0278565B1/en not_active Expired - Lifetime
- 1988-02-03 DE DE3850271T patent/DE3850271T2/de not_active Expired - Fee Related
- 1988-02-05 KR KR1019880001057A patent/KR0128504B1/ko not_active IP Right Cessation
- 1988-02-05 AU AU11352/88A patent/AU1135288A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| IE880290L (en) | 1988-08-06 |
| JPS63213367A (ja) | 1988-09-06 |
| ATE107798T1 (de) | 1994-07-15 |
| KR0128504B1 (ko) | 1998-04-07 |
| JP2677579B2 (ja) | 1997-11-17 |
| EP0278565B1 (en) | 1994-06-22 |
| DE3850271T2 (de) | 1995-02-02 |
| AU1135288A (en) | 1988-08-11 |
| KR880010505A (ko) | 1988-10-10 |
| EP0278565A1 (en) | 1988-08-17 |
| DE3850271D1 (de) | 1994-07-28 |
| US4849814A (en) | 1989-07-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |