NL8503408A - Hoogfrequenttransistor en werkwijze ter vervaardiging daarvan. - Google Patents
Hoogfrequenttransistor en werkwijze ter vervaardiging daarvan. Download PDFInfo
- Publication number
- NL8503408A NL8503408A NL8503408A NL8503408A NL8503408A NL 8503408 A NL8503408 A NL 8503408A NL 8503408 A NL8503408 A NL 8503408A NL 8503408 A NL8503408 A NL 8503408A NL 8503408 A NL8503408 A NL 8503408A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- silicon
- conductivity type
- base
- zones
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 57
- 229910052710 silicon Inorganic materials 0.000 claims description 57
- 239000010703 silicon Substances 0.000 claims description 57
- 238000005530 etching Methods 0.000 claims description 20
- 230000003064 anti-oxidating effect Effects 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 239000003963 antioxidant agent Substances 0.000 claims description 7
- 230000003078 antioxidant effect Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000006229 carbon black Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 92
- 238000002513 implantation Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
- H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0813—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8503408A NL8503408A (nl) | 1985-12-11 | 1985-12-11 | Hoogfrequenttransistor en werkwijze ter vervaardiging daarvan. |
| DE8686202185T DE3678112D1 (de) | 1985-12-11 | 1986-12-01 | Hochfrequenz-transistor und verfahren zu dessen herstellung. |
| EP86202185A EP0225672B1 (en) | 1985-12-11 | 1986-12-01 | High-frequency transistor and method of manufacturing same |
| JP61291670A JPS62139357A (ja) | 1985-12-11 | 1986-12-09 | 高周波トランジスタ及びその製造方法 |
| US07/287,510 US4860078A (en) | 1985-12-11 | 1988-12-19 | High-frequency transistor with low internal capacitance and low thermal resistance |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8503408 | 1985-12-11 | ||
| NL8503408A NL8503408A (nl) | 1985-12-11 | 1985-12-11 | Hoogfrequenttransistor en werkwijze ter vervaardiging daarvan. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8503408A true NL8503408A (nl) | 1987-07-01 |
Family
ID=19846998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8503408A NL8503408A (nl) | 1985-12-11 | 1985-12-11 | Hoogfrequenttransistor en werkwijze ter vervaardiging daarvan. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4860078A (ja) |
| EP (1) | EP0225672B1 (ja) |
| JP (1) | JPS62139357A (ja) |
| DE (1) | DE3678112D1 (ja) |
| NL (1) | NL8503408A (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5244822A (en) * | 1988-05-16 | 1993-09-14 | Kabushiki Kaisha Toshiba | Method of fabricating bipolar transistor using self-aligned polysilicon technology |
| US5096842A (en) * | 1988-05-16 | 1992-03-17 | Kabushiki Kaisha Toshiba | Method of fabricating bipolar transistor using self-aligned polysilicon technology |
| US5117271A (en) * | 1990-12-07 | 1992-05-26 | International Business Machines Corporation | Low capacitance bipolar junction transistor and fabrication process therfor |
| DE19632412A1 (de) * | 1996-08-05 | 1998-02-12 | Sifu Hu | Vertikaler Bipolartransistor und Verfahren zu seiner Herstellung |
| JP3309959B2 (ja) * | 1998-04-16 | 2002-07-29 | 日本電気株式会社 | 半導体装置 |
| KR101340514B1 (ko) * | 2007-01-24 | 2013-12-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3982266A (en) * | 1974-12-09 | 1976-09-21 | Texas Instruments Incorporated | Integrated injection logic having high inverse current gain |
| JPS5526601A (en) * | 1978-01-14 | 1980-02-26 | Semiconductor Res Found | Semiconductor apparatus |
| FR2454698A1 (fr) * | 1979-04-20 | 1980-11-14 | Radiotechnique Compelec | Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede |
| JPS5694770A (en) * | 1979-12-28 | 1981-07-31 | Nec Corp | Transistor |
| US4338138A (en) * | 1980-03-03 | 1982-07-06 | International Business Machines Corporation | Process for fabricating a bipolar transistor |
| US4331708A (en) * | 1980-11-04 | 1982-05-25 | Texas Instruments Incorporated | Method of fabricating narrow deep grooves in silicon |
| US4484211A (en) * | 1981-02-04 | 1984-11-20 | Matsushita Electric Industrial Co., Ltd. | Oxide walled emitter |
| US4333794A (en) * | 1981-04-07 | 1982-06-08 | International Business Machines Corporation | Omission of thick Si3 N4 layers in ISA schemes |
| JPS58110075A (ja) * | 1981-12-23 | 1983-06-30 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JPS60235465A (ja) * | 1984-05-08 | 1985-11-22 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| DE3580206D1 (de) * | 1984-07-31 | 1990-11-29 | Toshiba Kawasaki Kk | Bipolarer transistor und verfahren zu seiner herstellung. |
-
1985
- 1985-12-11 NL NL8503408A patent/NL8503408A/nl not_active Application Discontinuation
-
1986
- 1986-12-01 DE DE8686202185T patent/DE3678112D1/de not_active Expired - Lifetime
- 1986-12-01 EP EP86202185A patent/EP0225672B1/en not_active Expired
- 1986-12-09 JP JP61291670A patent/JPS62139357A/ja active Pending
-
1988
- 1988-12-19 US US07/287,510 patent/US4860078A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3678112D1 (de) | 1991-04-18 |
| EP0225672B1 (en) | 1991-03-13 |
| JPS62139357A (ja) | 1987-06-23 |
| US4860078A (en) | 1989-08-22 |
| EP0225672A1 (en) | 1987-06-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |