NL8301977A - Ladinggekoppelde beeldopneeminrichting en geheugeninrichting met hoge bitdichtheid. - Google Patents
Ladinggekoppelde beeldopneeminrichting en geheugeninrichting met hoge bitdichtheid. Download PDFInfo
- Publication number
- NL8301977A NL8301977A NL8301977A NL8301977A NL8301977A NL 8301977 A NL8301977 A NL 8301977A NL 8301977 A NL8301977 A NL 8301977A NL 8301977 A NL8301977 A NL 8301977A NL 8301977 A NL8301977 A NL 8301977A
- Authority
- NL
- Netherlands
- Prior art keywords
- electrodes
- charge
- transport
- image
- lines
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 230000005855 radiation Effects 0.000 claims description 10
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 description 15
- 238000005036 potential barrier Methods 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 3
- 208000031872 Body Remains Diseases 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001454 recorded image Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Vehicle Body Suspensions (AREA)
- Amplifiers (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8301977A NL8301977A (nl) | 1983-06-03 | 1983-06-03 | Ladinggekoppelde beeldopneeminrichting en geheugeninrichting met hoge bitdichtheid. |
EP84200773A EP0128615B1 (en) | 1983-06-03 | 1984-05-29 | Charge-coupled semiconductor device and image sensor device of high information density |
AT84200773T ATE25796T1 (de) | 1983-06-03 | 1984-05-29 | Ladungsgekoppelte halbleiter-anordnung und bildsensor mit hoher informationsdichte. |
DE8484200773T DE3462570D1 (en) | 1983-06-03 | 1984-05-29 | Charge-coupled semiconductor device and image sensor device of high information density |
US06/615,843 US4868855A (en) | 1983-06-03 | 1984-05-31 | Charge-coupled semiconductor device and image sensor device of high information density |
ES532999A ES8506415A1 (es) | 1983-06-03 | 1984-05-31 | Un dispositivo de captacion de imagen, acoplado en carga, para recoger una imagen de radiacion y convertirla en una senal electrica. |
AU28933/84A AU565528B2 (en) | 1983-06-03 | 1984-06-01 | Charge coupled device and image sensor |
JP59114363A JPS6012768A (ja) | 1983-06-03 | 1984-06-04 | 電荷結合半導体装置及び電荷結合撮像装置 |
SG93/88A SG9388G (en) | 1983-06-03 | 1988-02-05 | Charge-coupled semiconductor device and image sensor device of high information density |
HK353/88A HK35388A (en) | 1983-06-03 | 1988-05-12 | Charge-coupled semiconductor device and image sensor device of high information density |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8301977 | 1983-06-03 | ||
NL8301977A NL8301977A (nl) | 1983-06-03 | 1983-06-03 | Ladinggekoppelde beeldopneeminrichting en geheugeninrichting met hoge bitdichtheid. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8301977A true NL8301977A (nl) | 1985-01-02 |
Family
ID=19841950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8301977A NL8301977A (nl) | 1983-06-03 | 1983-06-03 | Ladinggekoppelde beeldopneeminrichting en geheugeninrichting met hoge bitdichtheid. |
Country Status (10)
Country | Link |
---|---|
US (1) | US4868855A (ja) |
EP (1) | EP0128615B1 (ja) |
JP (1) | JPS6012768A (ja) |
AT (1) | ATE25796T1 (ja) |
AU (1) | AU565528B2 (ja) |
DE (1) | DE3462570D1 (ja) |
ES (1) | ES8506415A1 (ja) |
HK (1) | HK35388A (ja) |
NL (1) | NL8301977A (ja) |
SG (1) | SG9388G (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8401312A (nl) * | 1984-04-24 | 1985-11-18 | Philips Nv | Ladingsgekoppelde inrichting. |
NL8501210A (nl) * | 1985-04-29 | 1986-11-17 | Philips Nv | Ladingsgekoppelde inrichting. |
NL8603008A (nl) * | 1986-11-27 | 1988-06-16 | Philips Nv | Ccd-beeldopneeminrichting. |
NL8603007A (nl) * | 1986-11-27 | 1988-06-16 | Philips Nv | Ladingsgekoppelde inrichting. |
EP0358260A1 (en) * | 1988-08-29 | 1990-03-14 | Koninklijke Philips Electronics N.V. | Drive shift register for a solid-state image sensor |
US5325412A (en) * | 1989-05-23 | 1994-06-28 | U.S. Philips Corporation | Charge-coupled device, image sensor arrangement and camera provided with such an image sensor arrangement |
JP2736121B2 (ja) * | 1989-07-12 | 1998-04-02 | 株式会社東芝 | 電荷転送装置及び固体撮像装置 |
JPH05130525A (ja) * | 1991-11-07 | 1993-05-25 | Fuji Film Micro Device Kk | 固体撮像装置とその駆動方法 |
US5444280A (en) * | 1993-12-20 | 1995-08-22 | Scientific Imaging Technologies, Inc. | Photodetector comprising avalanche photosensing layer and interline CCD readout layer |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3909803A (en) * | 1972-11-02 | 1975-09-30 | Ibm | Multi-phase CCD shift register optical sensor with high resolution |
US3931463A (en) * | 1974-07-23 | 1976-01-06 | Rca Corporation | Scene brightness compensation system with charge transfer imager |
US3932775A (en) * | 1974-07-25 | 1976-01-13 | Rca Corporation | Interlaced readout of charge stored in a charge coupled image sensing array |
JPS596111B2 (ja) * | 1977-11-30 | 1984-02-09 | 株式会社東芝 | エリアセンサ |
US4178614A (en) * | 1978-08-24 | 1979-12-11 | Rca Corporation | Readout of a densely packed CCD |
JPS58188156A (ja) * | 1982-04-27 | 1983-11-02 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JPS5966277A (ja) * | 1982-10-07 | 1984-04-14 | Toshiba Corp | 固体イメ−ジセンサ |
-
1983
- 1983-06-03 NL NL8301977A patent/NL8301977A/nl not_active Application Discontinuation
-
1984
- 1984-05-29 EP EP84200773A patent/EP0128615B1/en not_active Expired
- 1984-05-29 DE DE8484200773T patent/DE3462570D1/de not_active Expired
- 1984-05-29 AT AT84200773T patent/ATE25796T1/de not_active IP Right Cessation
- 1984-05-31 US US06/615,843 patent/US4868855A/en not_active Expired - Fee Related
- 1984-05-31 ES ES532999A patent/ES8506415A1/es not_active Expired
- 1984-06-01 AU AU28933/84A patent/AU565528B2/en not_active Ceased
- 1984-06-04 JP JP59114363A patent/JPS6012768A/ja active Pending
-
1988
- 1988-02-05 SG SG93/88A patent/SG9388G/en unknown
- 1988-05-12 HK HK353/88A patent/HK35388A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
ES532999A0 (es) | 1985-07-01 |
SG9388G (en) | 1988-07-01 |
AU2893384A (en) | 1984-12-06 |
DE3462570D1 (en) | 1987-04-09 |
HK35388A (en) | 1988-05-20 |
EP0128615B1 (en) | 1987-03-04 |
ATE25796T1 (de) | 1987-03-15 |
ES8506415A1 (es) | 1985-07-01 |
AU565528B2 (en) | 1987-09-17 |
JPS6012768A (ja) | 1985-01-23 |
EP0128615A1 (en) | 1984-12-19 |
US4868855A (en) | 1989-09-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BV | The patent application has lapsed |