NL8301629A - Halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting. Download PDFInfo
- Publication number
- NL8301629A NL8301629A NL8301629A NL8301629A NL8301629A NL 8301629 A NL8301629 A NL 8301629A NL 8301629 A NL8301629 A NL 8301629A NL 8301629 A NL8301629 A NL 8301629A NL 8301629 A NL8301629 A NL 8301629A
- Authority
- NL
- Netherlands
- Prior art keywords
- output
- semiconductor device
- gate electrode
- transistor
- zone
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 230000005669 field effect Effects 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 230000005670 electromagnetic radiation Effects 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 239000012634 fragment Substances 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 26
- 239000000758 substrate Substances 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000005352 clarification Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 101100115215 Caenorhabditis elegans cul-2 gene Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/156—CCD or CID colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/454—Output structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8301629A NL8301629A (nl) | 1983-05-09 | 1983-05-09 | Halfgeleiderinrichting. |
| CA000453390A CA1214573A (en) | 1983-05-09 | 1984-05-02 | Semiconductor device |
| US06/607,334 US4622567A (en) | 1983-05-09 | 1984-05-04 | Integrated FET device having multiple outputs |
| DE8484200643T DE3465553D1 (en) | 1983-05-09 | 1984-05-07 | Semiconductor device |
| EP84200643A EP0127223B1 (en) | 1983-05-09 | 1984-05-07 | Semiconductor device |
| JP59091140A JPS59208775A (ja) | 1983-05-09 | 1984-05-09 | 半導体デバイス |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8301629 | 1983-05-09 | ||
| NL8301629A NL8301629A (nl) | 1983-05-09 | 1983-05-09 | Halfgeleiderinrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8301629A true NL8301629A (nl) | 1984-12-03 |
Family
ID=19841824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8301629A NL8301629A (nl) | 1983-05-09 | 1983-05-09 | Halfgeleiderinrichting. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4622567A (enExample) |
| EP (1) | EP0127223B1 (enExample) |
| JP (1) | JPS59208775A (enExample) |
| CA (1) | CA1214573A (enExample) |
| DE (1) | DE3465553D1 (enExample) |
| NL (1) | NL8301629A (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63278248A (ja) * | 1987-03-13 | 1988-11-15 | Fujitsu Ltd | ゲ−トアレイの基本セル |
| EP0396093B1 (en) * | 1989-05-02 | 1999-06-23 | Sony Corporation | Charge transfer device having multiple registers |
| US5206530A (en) * | 1989-05-02 | 1993-04-27 | Sony Corporation | Charge transfer device having multiple registers |
| US5194751A (en) * | 1989-07-17 | 1993-03-16 | Sony Corporation | Structure of solid-state image sensing devices |
| EP0409174B1 (en) * | 1989-07-17 | 2004-06-09 | Sony Corporation | Structure of solid-state image sensing devices |
| JP2509706B2 (ja) * | 1989-08-18 | 1996-06-26 | 株式会社東芝 | マスクromの製造方法 |
| JPH0828497B2 (ja) * | 1990-07-19 | 1996-03-21 | 株式会社東芝 | 固体撮像装置 |
| JP3097186B2 (ja) * | 1991-06-04 | 2000-10-10 | ソニー株式会社 | 固体撮像装置 |
| US5387536A (en) * | 1994-01-26 | 1995-02-07 | Eastman Kodak Company | Method of making a low capacitance floating diffusion structure for a solid state image sensor |
| US5591997A (en) * | 1995-01-17 | 1997-01-07 | Eastman Kodak Company | Low capacitance floating diffusion structure for a solid state image sensor |
| JP3280288B2 (ja) * | 1996-09-12 | 2002-04-30 | シャープ株式会社 | 固体撮像装置、その製造方法、およびその駆動方法 |
| US6878977B1 (en) * | 1999-02-25 | 2005-04-12 | Canon Kabushiki Kaisha | Photoelectric conversion device, and image sensor and image input system making use of the same |
| JP7242285B2 (ja) * | 2018-12-19 | 2023-03-20 | キオクシア株式会社 | 半導体装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2159592C3 (de) * | 1971-12-01 | 1981-12-17 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Integrierte Halbleiteranordnung |
| US4152717A (en) * | 1975-07-18 | 1979-05-01 | Tokyo Shibaura Electric Co., Ltd. | Complementary MOSFET device |
| JPS5422781A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Insulator gate protective semiconductor device |
-
1983
- 1983-05-09 NL NL8301629A patent/NL8301629A/nl not_active Application Discontinuation
-
1984
- 1984-05-02 CA CA000453390A patent/CA1214573A/en not_active Expired
- 1984-05-04 US US06/607,334 patent/US4622567A/en not_active Expired - Fee Related
- 1984-05-07 EP EP84200643A patent/EP0127223B1/en not_active Expired
- 1984-05-07 DE DE8484200643T patent/DE3465553D1/de not_active Expired
- 1984-05-09 JP JP59091140A patent/JPS59208775A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| CA1214573A (en) | 1986-11-25 |
| US4622567A (en) | 1986-11-11 |
| DE3465553D1 (en) | 1987-09-24 |
| JPH0525174B2 (enExample) | 1993-04-12 |
| EP0127223A1 (en) | 1984-12-05 |
| JPS59208775A (ja) | 1984-11-27 |
| EP0127223B1 (en) | 1987-08-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| A85 | Still pending on 85-01-01 | ||
| BC | A request for examination has been filed | ||
| BI | The patent application has been withdrawn |