JPH0525174B2 - - Google Patents

Info

Publication number
JPH0525174B2
JPH0525174B2 JP59091140A JP9114084A JPH0525174B2 JP H0525174 B2 JPH0525174 B2 JP H0525174B2 JP 59091140 A JP59091140 A JP 59091140A JP 9114084 A JP9114084 A JP 9114084A JP H0525174 B2 JPH0525174 B2 JP H0525174B2
Authority
JP
Japan
Prior art keywords
region
transistor
output
source
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59091140A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59208775A (ja
Inventor
Aruberutasu Parusu Yan
Yan Kurinkuhameru Arenda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS59208775A publication Critical patent/JPS59208775A/ja
Publication of JPH0525174B2 publication Critical patent/JPH0525174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/156—CCD or CID colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP59091140A 1983-05-09 1984-05-09 半導体デバイス Granted JPS59208775A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8301629 1983-05-09
NL8301629A NL8301629A (nl) 1983-05-09 1983-05-09 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS59208775A JPS59208775A (ja) 1984-11-27
JPH0525174B2 true JPH0525174B2 (enExample) 1993-04-12

Family

ID=19841824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59091140A Granted JPS59208775A (ja) 1983-05-09 1984-05-09 半導体デバイス

Country Status (6)

Country Link
US (1) US4622567A (enExample)
EP (1) EP0127223B1 (enExample)
JP (1) JPS59208775A (enExample)
CA (1) CA1214573A (enExample)
DE (1) DE3465553D1 (enExample)
NL (1) NL8301629A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278248A (ja) * 1987-03-13 1988-11-15 Fujitsu Ltd ゲ−トアレイの基本セル
EP0396093B1 (en) * 1989-05-02 1999-06-23 Sony Corporation Charge transfer device having multiple registers
US5206530A (en) * 1989-05-02 1993-04-27 Sony Corporation Charge transfer device having multiple registers
US5194751A (en) * 1989-07-17 1993-03-16 Sony Corporation Structure of solid-state image sensing devices
EP0409174B1 (en) * 1989-07-17 2004-06-09 Sony Corporation Structure of solid-state image sensing devices
JP2509706B2 (ja) * 1989-08-18 1996-06-26 株式会社東芝 マスクｒｏｍの製造方法
JPH0828497B2 (ja) * 1990-07-19 1996-03-21 株式会社東芝 固体撮像装置
JP3097186B2 (ja) * 1991-06-04 2000-10-10 ソニー株式会社 固体撮像装置
US5387536A (en) * 1994-01-26 1995-02-07 Eastman Kodak Company Method of making a low capacitance floating diffusion structure for a solid state image sensor
US5591997A (en) * 1995-01-17 1997-01-07 Eastman Kodak Company Low capacitance floating diffusion structure for a solid state image sensor
JP3280288B2 (ja) * 1996-09-12 2002-04-30 シャープ株式会社 固体撮像装置、その製造方法、およびその駆動方法
US6878977B1 (en) * 1999-02-25 2005-04-12 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same
JP7242285B2 (ja) * 2018-12-19 2023-03-20 キオクシア株式会社 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2159592C3 (de) * 1971-12-01 1981-12-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrierte Halbleiteranordnung
US4152717A (en) * 1975-07-18 1979-05-01 Tokyo Shibaura Electric Co., Ltd. Complementary MOSFET device
JPS5422781A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Insulator gate protective semiconductor device

Also Published As

Publication number Publication date
CA1214573A (en) 1986-11-25
US4622567A (en) 1986-11-11
DE3465553D1 (en) 1987-09-24
NL8301629A (nl) 1984-12-03
EP0127223A1 (en) 1984-12-05
JPS59208775A (ja) 1984-11-27
EP0127223B1 (en) 1987-08-19

Similar Documents

Publication Publication Date Title
US5192990A (en) Output circuit for image sensor
US4087833A (en) Interlaced photodiode array employing analog shift registers
US5614740A (en) High-speed peristaltic CCD imager with GaAs fet output
US4660090A (en) CCD imager with on-chip processing
US4649430A (en) CCD imager with many dummy pixels
US4831426A (en) Solid state image sensing device and a method of manufacturing the same
CN100428483C (zh) 含光探测器和旁路装置的图像传感器及其制法
US4622567A (en) Integrated FET device having multiple outputs
US4656503A (en) Color CCD imager with minimal clock lines
US5040038A (en) Solid-state image sensor
US6114717A (en) Solid-state imaging device having no transfer error of the signal charges from vertical horizontal charge-transfer section
US20030064539A1 (en) Solid state imaging device, manufacturing method thereof, and solid state imaging apparatus
US7184083B2 (en) Solid state image pickup apparatus of low power consumption and its driving method
EP0132870B1 (en) Radiation-sensitive semiconductor device
US4721989A (en) CCD with transfer channel at lower potential than supply channel
JPH02278874A (ja) 固体撮像素子及びその製造方法
JP2875289B2 (ja) 固体撮像装置
US6383834B1 (en) Charge coupled device
Heyns et al. The resistive gate CTD area-image sensor
JPH04283965A (ja) 固体撮像素子
JPH07226497A (ja) 固体撮像素子
JP2910648B2 (ja) 固体撮像装置
GB2248341A (en) Infra-red radiation imaging device arrangements
JPH05176112A (ja) ラインセンサ
JPH03211769A (ja) 画素増幅型固体撮像素子