NL8203059A - Inrichting voor het laten groeien van dunwandige holle buisvormige kristallijne lichamen. - Google Patents
Inrichting voor het laten groeien van dunwandige holle buisvormige kristallijne lichamen. Download PDFInfo
- Publication number
- NL8203059A NL8203059A NL8203059A NL8203059A NL8203059A NL 8203059 A NL8203059 A NL 8203059A NL 8203059 A NL8203059 A NL 8203059A NL 8203059 A NL8203059 A NL 8203059A NL 8203059 A NL8203059 A NL 8203059A
- Authority
- NL
- Netherlands
- Prior art keywords
- internal
- opening
- rod
- flange
- container
- Prior art date
Links
- 230000005855 radiation Effects 0.000 claims description 24
- 239000000155 melt Substances 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 238000010408 sweeping Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 16
- 230000012010 growth Effects 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 229910002804 graphite Inorganic materials 0.000 description 10
- 239000010439 graphite Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 7
- 230000036433 growing body Effects 0.000 description 6
- 239000002054 inoculum Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28941081 | 1981-08-03 | ||
| US06/289,410 US4440728A (en) | 1981-08-03 | 1981-08-03 | Apparatus for growing tubular crystalline bodies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8203059A true NL8203059A (nl) | 1983-03-01 |
Family
ID=23111416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8203059A NL8203059A (nl) | 1981-08-03 | 1982-07-30 | Inrichting voor het laten groeien van dunwandige holle buisvormige kristallijne lichamen. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4440728A (cs) |
| JP (1) | JPS5826097A (cs) |
| AU (2) | AU549536B2 (cs) |
| CA (1) | CA1198035A (cs) |
| DE (1) | DE3228037A1 (cs) |
| FR (2) | FR2510616B1 (cs) |
| GB (1) | GB2103105B (cs) |
| IL (1) | IL66441A0 (cs) |
| IN (1) | IN158117B (cs) |
| NL (1) | NL8203059A (cs) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4440728A (en) * | 1981-08-03 | 1984-04-03 | Mobil Solar Energy Corporation | Apparatus for growing tubular crystalline bodies |
| US4647437A (en) * | 1983-05-19 | 1987-03-03 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| US4711695A (en) * | 1983-05-19 | 1987-12-08 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| US4661324A (en) * | 1985-02-15 | 1987-04-28 | Mobil Solar Energy Corporation | Apparatus for replenishing a melt |
| US5004519A (en) * | 1986-12-12 | 1991-04-02 | Texas Instruments Incorporated | Radiation heat shield for silicon melt-in manufacturing of single crystal silicon |
| DE3890206C2 (de) * | 1987-03-27 | 2001-05-17 | Ase Americas Inc N D Ges D Sta | Verfahren und Vorrichtung zum Ziehen eines hohlen Kristallkörpers |
| DE3890206T1 (de) * | 1987-03-27 | 1989-04-13 | Mobil Solar Energy Corp | Kristallziehapparatur |
| US4937053A (en) * | 1987-03-27 | 1990-06-26 | Mobil Solar Energy Corporation | Crystal growing apparatus |
| US4936947A (en) * | 1987-05-05 | 1990-06-26 | Mobil Solar Energy Corporation | System for controlling apparatus for growing tubular crystalline bodies |
| USRE34375E (en) * | 1987-05-05 | 1993-09-14 | Mobil Solar Energy Corporation | System for controlling apparatus for growing tubular crystalline bodies |
| US4968380A (en) * | 1989-05-24 | 1990-11-06 | Mobil Solar Energy Corporation | System for continuously replenishing melt |
| US5558712A (en) * | 1994-11-04 | 1996-09-24 | Ase Americas, Inc. | Contoured inner after-heater shield for reducing stress in growing crystalline bodies |
| US6139811A (en) * | 1999-03-25 | 2000-10-31 | Ase Americas, Inc. | EFG crystal growth apparatus |
| US7108746B2 (en) * | 2001-05-18 | 2006-09-19 | Integrated Materials, Inc. | Silicon fixture with roughened surface supporting wafers in chemical vapor deposition |
| US20020170487A1 (en) * | 2001-05-18 | 2002-11-21 | Raanan Zehavi | Pre-coated silicon fixtures used in a high temperature process |
| US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7344594B2 (en) * | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| JP2006308267A (ja) * | 2005-05-02 | 2006-11-09 | Iis Materials:Kk | るつぼ装置及びそれを用いた溶融材料の凝固方法 |
| KR100985086B1 (ko) | 2007-11-30 | 2010-10-04 | 가부시키가이샤 가네카 | 항균성 인공 모발 및 인공 모발용 항균성 코팅제 |
| JP6898427B2 (ja) * | 2017-03-30 | 2021-07-07 | 京セラ株式会社 | 管状サファイア部材、熱交換器、半導体製造装置および管状サファイア部材の製造方法 |
| US10415149B2 (en) * | 2017-03-31 | 2019-09-17 | Silfex, Inc. | Growth of a shaped silicon ingot by feeding liquid onto a shaped ingot |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3591348A (en) * | 1968-01-24 | 1971-07-06 | Tyco Laboratories Inc | Method of growing crystalline materials |
| DE1935372C3 (de) * | 1969-07-11 | 1980-06-19 | Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) | Verfahren und Vorrichtung zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einer Schmelze |
| US3870477A (en) * | 1972-07-10 | 1975-03-11 | Tyco Laboratories Inc | Optical control of crystal growth |
| US3961905A (en) * | 1974-02-25 | 1976-06-08 | Corning Glass Works | Crucible and heater assembly for crystal growth from a melt |
| JPS5146583A (en) * | 1974-10-21 | 1976-04-21 | Tokyo Shibaura Electric Co | Kanjotanketsushono seizohoho |
| US3953174A (en) * | 1975-03-17 | 1976-04-27 | Tyco Laboratories, Inc. | Apparatus for growing crystalline bodies from the melt |
| JPS5252184A (en) * | 1975-10-24 | 1977-04-26 | Mitsubishi Electric Corp | Apparatus for producing single crystal |
| US4036666A (en) * | 1975-12-05 | 1977-07-19 | Mobil Tyco Solar Energy Corporation | Manufacture of semiconductor ribbon |
| US4230674A (en) | 1976-12-27 | 1980-10-28 | Mobil Tyco Solar Energy Corporation | Crucible-die assemblies for growing crystalline bodies of selected shapes |
| US4158038A (en) | 1977-01-24 | 1979-06-12 | Mobil Tyco Solar Energy Corporation | Method and apparatus for reducing residual stresses in crystals |
| JPS53119281A (en) * | 1977-03-28 | 1978-10-18 | Hitachi Ltd | Manufacturing apparatus for semiconductor crystal |
| US4325917A (en) * | 1977-07-21 | 1982-04-20 | Pelts Boris B | Method and apparatus for producing sapphire tubes |
| US4235848A (en) * | 1978-06-15 | 1980-11-25 | Apilat Vitaly Y | Apparatus for pulling single crystal from melt on a seed |
| US4271129A (en) * | 1979-03-06 | 1981-06-02 | Rca Corporation | Heat radiation deflectors within an EFG crucible |
| JPS5659693A (en) * | 1979-10-23 | 1981-05-23 | Ricoh Co Ltd | Beltlike crystal manufacturing apparatus |
| US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
| US4348365A (en) * | 1981-03-09 | 1982-09-07 | Rca Corporation | Crystal seed holder assembly |
| US4440728A (en) * | 1981-08-03 | 1984-04-03 | Mobil Solar Energy Corporation | Apparatus for growing tubular crystalline bodies |
-
1981
- 1981-08-03 US US06/289,410 patent/US4440728A/en not_active Expired - Lifetime
-
1982
- 1982-05-07 JP JP57076462A patent/JPS5826097A/ja active Granted
- 1982-07-21 IN IN557/DEL/82A patent/IN158117B/en unknown
- 1982-07-21 AU AU86255/82A patent/AU549536B2/en not_active Ceased
- 1982-07-22 GB GB08221168A patent/GB2103105B/en not_active Expired
- 1982-07-23 CA CA000407959A patent/CA1198035A/en not_active Expired
- 1982-07-27 DE DE19823228037 patent/DE3228037A1/de active Granted
- 1982-07-30 NL NL8203059A patent/NL8203059A/nl not_active Application Discontinuation
- 1982-07-30 FR FR828213350A patent/FR2510616B1/fr not_active Expired - Lifetime
- 1982-08-02 IL IL66441A patent/IL66441A0/xx not_active IP Right Cessation
-
1985
- 1985-11-22 AU AU50290/85A patent/AU573922B2/en not_active Ceased
-
1988
- 1988-05-25 FR FR8806948A patent/FR2634788B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US4440728A (en) | 1984-04-03 |
| CA1198035A (en) | 1985-12-17 |
| IN158117B (cs) | 1986-09-06 |
| IL66441A0 (en) | 1982-12-31 |
| JPH0327513B2 (cs) | 1991-04-16 |
| JPS5826097A (ja) | 1983-02-16 |
| FR2634788B1 (fr) | 1994-01-28 |
| GB2103105B (en) | 1985-03-27 |
| DE3228037C2 (cs) | 1992-10-01 |
| FR2634788A1 (fr) | 1990-02-02 |
| AU5029085A (en) | 1986-05-08 |
| AU573922B2 (en) | 1988-06-23 |
| GB2103105A (en) | 1983-02-16 |
| FR2510616A1 (fr) | 1983-02-04 |
| AU549536B2 (en) | 1986-01-30 |
| AU8625582A (en) | 1983-02-10 |
| DE3228037A1 (de) | 1983-02-17 |
| FR2510616B1 (fr) | 1990-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| DNT | Communications of changes of names of applicants whose applications have been laid open to public inspection |
Free format text: MOBIL SOLAR ENERGY CORPORATION |
|
| A85 | Still pending on 85-01-01 | ||
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| DNT | Communications of changes of names of applicants whose applications have been laid open to public inspection |
Free format text: ASE AMERICAS, INC. |
|
| BV | The patent application has lapsed |