NL8105064A - Beeldopneeminrichting met een ladingsgekoppelde inrichting. - Google Patents

Beeldopneeminrichting met een ladingsgekoppelde inrichting. Download PDF

Info

Publication number
NL8105064A
NL8105064A NL8105064A NL8105064A NL8105064A NL 8105064 A NL8105064 A NL 8105064A NL 8105064 A NL8105064 A NL 8105064A NL 8105064 A NL8105064 A NL 8105064A NL 8105064 A NL8105064 A NL 8105064A
Authority
NL
Netherlands
Prior art keywords
area
charge
control gate
gate
channel
Prior art date
Application number
NL8105064A
Other languages
English (en)
Dutch (nl)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL8105064A publication Critical patent/NL8105064A/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
NL8105064A 1980-11-10 1981-11-09 Beeldopneeminrichting met een ladingsgekoppelde inrichting. NL8105064A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP55157831A JPS5780764A (en) 1980-11-10 1980-11-10 Solid state image pickup element
JP15783180 1980-11-10

Publications (1)

Publication Number Publication Date
NL8105064A true NL8105064A (nl) 1982-06-01

Family

ID=15658275

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8105064A NL8105064A (nl) 1980-11-10 1981-11-09 Beeldopneeminrichting met een ladingsgekoppelde inrichting.

Country Status (8)

Country Link
US (1) US4504848A (cs)
JP (1) JPS5780764A (cs)
CA (1) CA1171947A (cs)
DE (1) DE3144163A1 (cs)
FR (1) FR2494043A1 (cs)
GB (1) GB2087152B (cs)
NL (1) NL8105064A (cs)
SE (1) SE451655B (cs)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831670A (ja) * 1981-08-20 1983-02-24 Matsushita Electric Ind Co Ltd 固体撮像装置
JPS5847378A (ja) * 1981-09-17 1983-03-19 Canon Inc 撮像素子
JPS58210663A (ja) * 1982-06-01 1983-12-07 Mitsubishi Electric Corp 固体撮像装置
JPS5931056A (ja) * 1982-08-13 1984-02-18 Mitsubishi Electric Corp 固体撮像素子
GB2132818B (en) * 1983-01-03 1987-08-19 Rca Corp Imaging array
US4658497A (en) * 1983-01-03 1987-04-21 Rca Corporation Method of making an imaging array having a higher sensitivity
US4603342A (en) * 1983-01-03 1986-07-29 Rca Corporation Imaging array having higher sensitivity and a method of making the same
JPS60119182A (ja) * 1983-11-30 1985-06-26 Mitsubishi Electric Corp 固体撮像素子
JPS61144874A (ja) * 1984-12-19 1986-07-02 Toshiba Corp 電荷転送装置
US4870495A (en) * 1985-02-22 1989-09-26 Canon Kabushiki Kaisha Image sensing element and image sensing apparatus for recording a still image
JP2727584B2 (ja) * 1988-09-20 1998-03-11 ソニー株式会社 固体撮像装置
US5702971A (en) * 1995-03-31 1997-12-30 Eastman Kodak Company Self-aligned LOD antiblooming structure for solid-state imagers
KR100332949B1 (ko) * 2000-05-23 2002-04-20 윤종용 전자 줌 기능에 적합한 고체 촬상 소자

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
NL165886C (nl) * 1972-04-03 1981-05-15 Hitachi Ltd Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers.
US3863065A (en) * 1972-10-02 1975-01-28 Rca Corp Dynamic control of blooming in charge coupled, image-sensing arrays
NL7311600A (nl) * 1973-08-23 1975-02-25 Philips Nv Ladingsgekoppelde inrichting.
US3896474A (en) * 1973-09-10 1975-07-22 Fairchild Camera Instr Co Charge coupled area imaging device with column anti-blooming control
US4365261A (en) * 1977-08-26 1982-12-21 Texas Instruments Incorporated Co-planar barrier-type charge coupled device with enhanced storage capacity and decreased leakage current
US4151539A (en) * 1977-12-23 1979-04-24 The United States Of America As Represented By The Secretary Of The Air Force Junction-storage JFET bucket-brigade structure
US4229752A (en) * 1978-05-16 1980-10-21 Texas Instruments Incorporated Virtual phase charge transfer device
US4362575A (en) * 1981-08-27 1982-12-07 Rca Corporation Method of making buried channel charge coupled device with means for controlling excess charge

Also Published As

Publication number Publication date
SE451655B (sv) 1987-10-19
GB2087152A (en) 1982-05-19
DE3144163C2 (cs) 1991-03-07
CA1171947A (en) 1984-07-31
FR2494043A1 (fr) 1982-05-14
DE3144163A1 (de) 1982-06-16
US4504848A (en) 1985-03-12
SE8106620L (sv) 1982-05-11
JPS5780764A (en) 1982-05-20
FR2494043B1 (cs) 1985-05-10
JPH0319711B2 (cs) 1991-03-15
GB2087152B (en) 1984-07-04

Similar Documents

Publication Publication Date Title
NL8105064A (nl) Beeldopneeminrichting met een ladingsgekoppelde inrichting.
US6555842B1 (en) Active pixel sensor with intra-pixel charge transfer
US7755679B2 (en) Apparatus and method for reducing edge effect in an image sensor
DE4417159C2 (de) CCD-Festkörperbildaufnehmer mit Überlaufdrainstruktur
DE102017125227A1 (de) Fotoelektrisches umwandlungsgerät und bildaufnahmesystem
EP0145543B1 (fr) Barrette multi-linéaire à transfert de charge
US4040076A (en) Charge transfer skimming and reset circuit
US20050077549A1 (en) Frame shutter pixel with an isolated storage node
DE112018001494T5 (de) Bildgebungselement und elektronische vorrichtung
NL8000961A (nl) Halfgeleider beeldopname-eenheid.
JPS60254770A (ja) イメージセンサ
JPH05137072A (ja) 固体撮像装置
US5053873A (en) Solid state image pickup device capable of picking up an image with a long time exposure at a low noise
US4758741A (en) Photosensitive device ensuring an anti-blooming effect
US4685117A (en) Base clipping process for a solid state photosensitive device
EP0276594A1 (fr) Dispositif anti-éblouissement pour capteur d'images à transfert de charges, et capteur d'images comportant un tel dispositif
US6873359B1 (en) Self-adjusting, adaptive, minimal noise input amplifier circuit
EP1627432A1 (fr) Capteur d image matriciel en technologie cmos
EP1213765A2 (en) Solid state imaging device
EP0149948A2 (fr) Perfectionnement aux dispositifs photosensibles à l'état solide
JPH05226630A (ja) 固体撮像装置
EP0295977B1 (fr) Photosenseur à structure de transfert de trame et son utilisation dans un capteur d'images à effet de traînage réduit
JPH01500471A (ja) ホトダイオードを用いたイメージセンサのための電子シャッタ
JP2636898B2 (ja) 半導体装置
JPS59108460A (ja) 固体撮像装置

Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BV The patent application has lapsed