NL8102870A - Epitaxiale inrichtingen met verminderde dislokatie- telling. - Google Patents
Epitaxiale inrichtingen met verminderde dislokatie- telling. Download PDFInfo
- Publication number
- NL8102870A NL8102870A NL8102870A NL8102870A NL8102870A NL 8102870 A NL8102870 A NL 8102870A NL 8102870 A NL8102870 A NL 8102870A NL 8102870 A NL8102870 A NL 8102870A NL 8102870 A NL8102870 A NL 8102870A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- substrate
- buffer layer
- devices
- doped
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 33
- 239000010410 layer Substances 0.000 description 54
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 25
- 239000013078 crystal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011593 sulfur Substances 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000004943 liquid phase epitaxy Methods 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 101150013191 E gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16002880A | 1980-06-16 | 1980-06-16 | |
| US16002880 | 1980-06-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8102870A true NL8102870A (nl) | 1982-01-18 |
Family
ID=22575182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8102870A NL8102870A (nl) | 1980-06-16 | 1981-06-15 | Epitaxiale inrichtingen met verminderde dislokatie- telling. |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5727025A (de) |
| CA (1) | CA1165851A (de) |
| DE (1) | DE3123228A1 (de) |
| FR (1) | FR2484706B1 (de) |
| GB (1) | GB2080619B (de) |
| IT (1) | IT1138389B (de) |
| NL (1) | NL8102870A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5863183A (ja) * | 1981-10-09 | 1983-04-14 | Semiconductor Res Found | ２−６族間化合物の結晶成長法 |
| US4596626A (en) * | 1983-02-10 | 1986-06-24 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Method of making macrocrystalline or single crystal semiconductor material |
| FR2555811B1 (fr) * | 1983-11-30 | 1986-09-05 | Radiotechnique Compelec | Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede |
| DE3421215A1 (de) * | 1984-06-07 | 1985-12-12 | Aeg-Telefunken Ag, 1000 Berlin Und 6000 Frankfurt | Verfahren zur erzeugung von ingaasp und ingaas - doppelheterostrukturlasern und -led's mittels fluessigphasenepitaxie fuer einen wellenlaengenbereich von (lambda) = 1,2 (my)m bis 1,7 (my)m |
-
1981
- 1981-05-28 CA CA000378574A patent/CA1165851A/en not_active Expired
- 1981-06-11 DE DE19813123228 patent/DE3123228A1/de not_active Withdrawn
- 1981-06-11 FR FR8111496A patent/FR2484706B1/fr not_active Expired
- 1981-06-12 IT IT22301/81A patent/IT1138389B/it active
- 1981-06-15 NL NL8102870A patent/NL8102870A/nl not_active Application Discontinuation
- 1981-06-15 GB GB8118299A patent/GB2080619B/en not_active Expired
- 1981-06-16 JP JP9167281A patent/JPS5727025A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5727025A (en) | 1982-02-13 |
| GB2080619A (en) | 1982-02-03 |
| DE3123228A1 (de) | 1982-03-25 |
| IT1138389B (it) | 1986-09-17 |
| GB2080619B (en) | 1984-09-12 |
| FR2484706B1 (fr) | 1985-12-06 |
| CA1165851A (en) | 1984-04-17 |
| FR2484706A1 (fr) | 1981-12-18 |
| IT8122301A0 (it) | 1981-06-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |