JPS5727025A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5727025A
JPS5727025A JP9167281A JP9167281A JPS5727025A JP S5727025 A JPS5727025 A JP S5727025A JP 9167281 A JP9167281 A JP 9167281A JP 9167281 A JP9167281 A JP 9167281A JP S5727025 A JPS5727025 A JP S5727025A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9167281A
Other languages
English (en)
Japanese (ja)
Inventor
Mahajiyan Sabuhatsushiyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5727025A publication Critical patent/JPS5727025A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
JP9167281A 1980-06-16 1981-06-16 Semiconductor device Pending JPS5727025A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16002880A 1980-06-16 1980-06-16

Publications (1)

Publication Number Publication Date
JPS5727025A true JPS5727025A (en) 1982-02-13

Family

ID=22575182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9167281A Pending JPS5727025A (en) 1980-06-16 1981-06-16 Semiconductor device

Country Status (7)

Country Link
JP (1) JPS5727025A (de)
CA (1) CA1165851A (de)
DE (1) DE3123228A1 (de)
FR (1) FR2484706B1 (de)
GB (1) GB2080619B (de)
IT (1) IT1138389B (de)
NL (1) NL8102870A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5863183A (ja) * 1981-10-09 1983-04-14 Semiconductor Res Found ２−６族間化合物の結晶成長法
US4596626A (en) * 1983-02-10 1986-06-24 The United States Of America As Represented By The United States National Aeronautics And Space Administration Method of making macrocrystalline or single crystal semiconductor material
FR2555811B1 (fr) * 1983-11-30 1986-09-05 Radiotechnique Compelec Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede
DE3421215A1 (de) * 1984-06-07 1985-12-12 Aeg-Telefunken Ag, 1000 Berlin Und 6000 Frankfurt Verfahren zur erzeugung von ingaasp und ingaas - doppelheterostrukturlasern und -led's mittels fluessigphasenepitaxie fuer einen wellenlaengenbereich von (lambda) = 1,2 (my)m bis 1,7 (my)m

Also Published As

Publication number Publication date
GB2080619A (en) 1982-02-03
DE3123228A1 (de) 1982-03-25
IT1138389B (it) 1986-09-17
NL8102870A (nl) 1982-01-18
GB2080619B (en) 1984-09-12
FR2484706B1 (fr) 1985-12-06
CA1165851A (en) 1984-04-17
FR2484706A1 (fr) 1981-12-18
IT8122301A0 (it) 1981-06-12

Similar Documents

Publication Publication Date Title
JPS56142667A (en) Semiconductor device
JPS56126961A (en) Semiconductor device
JPS5778168A (en) Semiconductor device
JPS56164577A (en) Semiconductor device
DE3163340D1 (en) Semiconductor device
JPS56105662A (en) Semiconductor device
JPS56114370A (en) Semiconductor device
GB8403595D0 (en) Semiconductor device
JPS56126966A (en) Semiconductor device
EP0055558A3 (en) Semiconductor device
JPS56138956A (en) Semiconductor device
JPS56142668A (en) Semiconductor device
JPS56155567A (en) Semiconductor device
DE3161615D1 (en) Semiconductor device
DE3166929D1 (en) Semiconductor device
JPS5773981A (en) Semiconductor device
GB2149575B (en) Semiconductor device
DE3175373D1 (en) Semiconductor device
EP0048358A3 (en) Semiconductor device
JPS57106075A (en) Semiconductor device
DE3162083D1 (en) Semiconductor device
DE3174500D1 (en) Semiconductor device
DE3174789D1 (en) Semiconductor device
DE3175783D1 (en) Semiconductor device
JPS574158A (en) Semiconductor device