IT8122301A0 - Dispositivo epitassiale a numero di dislocazioni ridotto. - Google Patents

Dispositivo epitassiale a numero di dislocazioni ridotto.

Info

Publication number
IT8122301A0
IT8122301A0 IT8122301A IT2230181A IT8122301A0 IT 8122301 A0 IT8122301 A0 IT 8122301A0 IT 8122301 A IT8122301 A IT 8122301A IT 2230181 A IT2230181 A IT 2230181A IT 8122301 A0 IT8122301 A0 IT 8122301A0
Authority
IT
Italy
Prior art keywords
dislocations
reduced number
epitaxial device
epitaxial
reduced
Prior art date
Application number
IT8122301A
Other languages
English (en)
Other versions
IT1138389B (it
Inventor
Subhash Mahajan
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT8122301A0 publication Critical patent/IT8122301A0/it
Application granted granted Critical
Publication of IT1138389B publication Critical patent/IT1138389B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
IT22301/81A 1980-06-16 1981-06-12 Dispositivo epitassiale a numero di dislocazioni ridotto IT1138389B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16002880A 1980-06-16 1980-06-16

Publications (2)

Publication Number Publication Date
IT8122301A0 true IT8122301A0 (it) 1981-06-12
IT1138389B IT1138389B (it) 1986-09-17

Family

ID=22575182

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22301/81A IT1138389B (it) 1980-06-16 1981-06-12 Dispositivo epitassiale a numero di dislocazioni ridotto

Country Status (7)

Country Link
JP (1) JPS5727025A (it)
CA (1) CA1165851A (it)
DE (1) DE3123228A1 (it)
FR (1) FR2484706B1 (it)
GB (1) GB2080619B (it)
IT (1) IT1138389B (it)
NL (1) NL8102870A (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5863183A (ja) * 1981-10-09 1983-04-14 Semiconductor Res Found ２−６族間化合物の結晶成長法
US4596626A (en) * 1983-02-10 1986-06-24 The United States Of America As Represented By The United States National Aeronautics And Space Administration Method of making macrocrystalline or single crystal semiconductor material
FR2555811B1 (fr) * 1983-11-30 1986-09-05 Radiotechnique Compelec Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede
DE3421215A1 (de) * 1984-06-07 1985-12-12 Aeg-Telefunken Ag, 1000 Berlin Und 6000 Frankfurt Verfahren zur erzeugung von ingaasp und ingaas - doppelheterostrukturlasern und -led's mittels fluessigphasenepitaxie fuer einen wellenlaengenbereich von (lambda) = 1,2 (my)m bis 1,7 (my)m

Also Published As

Publication number Publication date
JPS5727025A (en) 1982-02-13
GB2080619A (en) 1982-02-03
DE3123228A1 (de) 1982-03-25
IT1138389B (it) 1986-09-17
NL8102870A (nl) 1982-01-18
GB2080619B (en) 1984-09-12
FR2484706B1 (fr) 1985-12-06
CA1165851A (en) 1984-04-17
FR2484706A1 (fr) 1981-12-18

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