GB2080619B - Epitaxial semiconductor device - Google Patents

Epitaxial semiconductor device

Info

Publication number
GB2080619B
GB2080619B GB8118299A GB8118299A GB2080619B GB 2080619 B GB2080619 B GB 2080619B GB 8118299 A GB8118299 A GB 8118299A GB 8118299 A GB8118299 A GB 8118299A GB 2080619 B GB2080619 B GB 2080619B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
epitaxial semiconductor
epitaxial
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8118299A
Other versions
GB2080619A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB2080619A publication Critical patent/GB2080619A/en
Application granted granted Critical
Publication of GB2080619B publication Critical patent/GB2080619B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
GB8118299A 1980-06-16 1981-06-15 Epitaxial semiconductor device Expired GB2080619B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16002880A 1980-06-16 1980-06-16

Publications (2)

Publication Number Publication Date
GB2080619A GB2080619A (en) 1982-02-03
GB2080619B true GB2080619B (en) 1984-09-12

Family

ID=22575182

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8118299A Expired GB2080619B (en) 1980-06-16 1981-06-15 Epitaxial semiconductor device

Country Status (7)

Country Link
JP (1) JPS5727025A (en)
CA (1) CA1165851A (en)
DE (1) DE3123228A1 (en)
FR (1) FR2484706B1 (en)
GB (1) GB2080619B (en)
IT (1) IT1138389B (en)
NL (1) NL8102870A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5863183A (en) * 1981-10-09 1983-04-14 Semiconductor Res Found 2-6 group compound semiconductor device
US4596626A (en) * 1983-02-10 1986-06-24 The United States Of America As Represented By The United States National Aeronautics And Space Administration Method of making macrocrystalline or single crystal semiconductor material
FR2555811B1 (en) * 1983-11-30 1986-09-05 Radiotechnique Compelec METHOD FOR PRODUCING LOW SPECTRAL WIDTH LIGHT EMITTING DIODES, AND DIODES OBTAINED BY THIS PROCESS
DE3421215A1 (en) * 1984-06-07 1985-12-12 Aeg-Telefunken Ag, 1000 Berlin Und 6000 Frankfurt METHOD FOR PRODUCING INGAASP AND INGAAS - DOUBLE HETEROSTRUCTURAL LASERS AND LED'S BY MEANS OF LIQUID PHASE EPITAXY FOR A WAVELENGTH RANGE FROM (LAMBDA) = 1.2 (MY) M TO 1.7 (MY) M

Also Published As

Publication number Publication date
CA1165851A (en) 1984-04-17
JPS5727025A (en) 1982-02-13
FR2484706B1 (en) 1985-12-06
IT1138389B (en) 1986-09-17
DE3123228A1 (en) 1982-03-25
NL8102870A (en) 1982-01-18
IT8122301A0 (en) 1981-06-12
FR2484706A1 (en) 1981-12-18
GB2080619A (en) 1982-02-03

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee