GB2080619B - Epitaxial semiconductor device - Google Patents
Epitaxial semiconductor deviceInfo
- Publication number
- GB2080619B GB2080619B GB8118299A GB8118299A GB2080619B GB 2080619 B GB2080619 B GB 2080619B GB 8118299 A GB8118299 A GB 8118299A GB 8118299 A GB8118299 A GB 8118299A GB 2080619 B GB2080619 B GB 2080619B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- epitaxial semiconductor
- epitaxial
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16002880A | 1980-06-16 | 1980-06-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2080619A GB2080619A (en) | 1982-02-03 |
GB2080619B true GB2080619B (en) | 1984-09-12 |
Family
ID=22575182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8118299A Expired GB2080619B (en) | 1980-06-16 | 1981-06-15 | Epitaxial semiconductor device |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5727025A (en) |
CA (1) | CA1165851A (en) |
DE (1) | DE3123228A1 (en) |
FR (1) | FR2484706B1 (en) |
GB (1) | GB2080619B (en) |
IT (1) | IT1138389B (en) |
NL (1) | NL8102870A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5863183A (en) * | 1981-10-09 | 1983-04-14 | Semiconductor Res Found | 2-6 group compound semiconductor device |
US4596626A (en) * | 1983-02-10 | 1986-06-24 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Method of making macrocrystalline or single crystal semiconductor material |
FR2555811B1 (en) * | 1983-11-30 | 1986-09-05 | Radiotechnique Compelec | METHOD FOR PRODUCING LOW SPECTRAL WIDTH LIGHT EMITTING DIODES, AND DIODES OBTAINED BY THIS PROCESS |
DE3421215A1 (en) * | 1984-06-07 | 1985-12-12 | Aeg-Telefunken Ag, 1000 Berlin Und 6000 Frankfurt | METHOD FOR PRODUCING INGAASP AND INGAAS - DOUBLE HETEROSTRUCTURAL LASERS AND LED'S BY MEANS OF LIQUID PHASE EPITAXY FOR A WAVELENGTH RANGE FROM (LAMBDA) = 1.2 (MY) M TO 1.7 (MY) M |
-
1981
- 1981-05-28 CA CA000378574A patent/CA1165851A/en not_active Expired
- 1981-06-11 FR FR8111496A patent/FR2484706B1/en not_active Expired
- 1981-06-11 DE DE19813123228 patent/DE3123228A1/en not_active Withdrawn
- 1981-06-12 IT IT22301/81A patent/IT1138389B/en active
- 1981-06-15 GB GB8118299A patent/GB2080619B/en not_active Expired
- 1981-06-15 NL NL8102870A patent/NL8102870A/en not_active Application Discontinuation
- 1981-06-16 JP JP9167281A patent/JPS5727025A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CA1165851A (en) | 1984-04-17 |
JPS5727025A (en) | 1982-02-13 |
FR2484706B1 (en) | 1985-12-06 |
IT1138389B (en) | 1986-09-17 |
DE3123228A1 (en) | 1982-03-25 |
NL8102870A (en) | 1982-01-18 |
IT8122301A0 (en) | 1981-06-12 |
FR2484706A1 (en) | 1981-12-18 |
GB2080619A (en) | 1982-02-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |