NL8003612A - Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze. - Google Patents

Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze. Download PDF

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Publication number
NL8003612A
NL8003612A NL8003612A NL8003612A NL8003612A NL 8003612 A NL8003612 A NL 8003612A NL 8003612 A NL8003612 A NL 8003612A NL 8003612 A NL8003612 A NL 8003612A NL 8003612 A NL8003612 A NL 8003612A
Authority
NL
Netherlands
Prior art keywords
layer
oxidation
oxidation treatment
oxide
masking
Prior art date
Application number
NL8003612A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8003612A priority Critical patent/NL8003612A/nl
Priority to US06/219,161 priority patent/US4374454A/en
Priority to DE8181200640T priority patent/DE3164132D1/de
Priority to EP81200640A priority patent/EP0042643B1/en
Priority to CA000380108A priority patent/CA1163378A/en
Priority to IE1379/81A priority patent/IE51994B1/en
Priority to AU72031/81A priority patent/AU545453B2/en
Priority to JP9734981A priority patent/JPS5731180A/ja
Publication of NL8003612A publication Critical patent/NL8003612A/nl

Links

Classifications

    • H10P76/40—
    • H10P14/61—
    • H10W10/0126—
    • H10W10/13—
    • H10W20/20—

Landscapes

  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
NL8003612A 1980-06-23 1980-06-23 Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze. NL8003612A (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL8003612A NL8003612A (nl) 1980-06-23 1980-06-23 Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze.
US06/219,161 US4374454A (en) 1980-06-23 1980-12-22 Method of manufacturing a semiconductor device
DE8181200640T DE3164132D1 (en) 1980-06-23 1981-06-11 Method of manufacturing a semiconductor device and semiconductor device manufactured by using said method
EP81200640A EP0042643B1 (en) 1980-06-23 1981-06-11 Method of manufacturing a semiconductor device and semiconductor device manufactured by using said method
CA000380108A CA1163378A (en) 1980-06-23 1981-06-18 Underpass in a semiconductor device
IE1379/81A IE51994B1 (en) 1980-06-23 1981-06-22 Method of manufacturing a semiconductor device and semiconductor device manufactured by using said method
AU72031/81A AU545453B2 (en) 1980-06-23 1981-06-22 A semiconductor device
JP9734981A JPS5731180A (en) 1980-06-23 1981-06-23 Method of producing semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8003612 1980-06-23
NL8003612A NL8003612A (nl) 1980-06-23 1980-06-23 Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze.

Publications (1)

Publication Number Publication Date
NL8003612A true NL8003612A (nl) 1982-01-18

Family

ID=19835496

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8003612A NL8003612A (nl) 1980-06-23 1980-06-23 Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze.

Country Status (8)

Country Link
US (1) US4374454A (enExample)
EP (1) EP0042643B1 (enExample)
JP (1) JPS5731180A (enExample)
AU (1) AU545453B2 (enExample)
CA (1) CA1163378A (enExample)
DE (1) DE3164132D1 (enExample)
IE (1) IE51994B1 (enExample)
NL (1) NL8003612A (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561168A (en) * 1982-11-22 1985-12-31 Siliconix Incorporated Method of making shadow isolated metal DMOS FET device
JPS62119936A (ja) * 1985-11-19 1987-06-01 Fujitsu Ltd コンプリメンタリ−ｌｓｉチツプ
GB2215124A (en) * 1988-02-16 1989-09-13 Stc Plc Integrated circuit underpasses
US5306652A (en) * 1991-12-30 1994-04-26 Texas Instruments Incorporated Lateral double diffused insulated gate field effect transistor fabrication process
EP0940851B1 (en) 1992-07-31 2005-10-05 Hughes Electronics Corporation Integrated circuit security system and method with implanted interconnections
KR0144902B1 (ko) * 1995-04-17 1998-07-01 김광호 불휘발성 메모리장치 및 그 제조방법
US5783846A (en) * 1995-09-22 1998-07-21 Hughes Electronics Corporation Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering
US5767000A (en) * 1996-06-05 1998-06-16 Advanced Micro Devices, Inc. Method of manufacturing subfield conductive layer
US5973375A (en) * 1997-06-06 1999-10-26 Hughes Electronics Corporation Camouflaged circuit structure with step implants
US6396368B1 (en) 1999-11-10 2002-05-28 Hrl Laboratories, Llc CMOS-compatible MEM switches and method of making
US7217977B2 (en) * 2004-04-19 2007-05-15 Hrl Laboratories, Llc Covert transformation of transistor properties as a circuit protection method
US6815816B1 (en) * 2000-10-25 2004-11-09 Hrl Laboratories, Llc Implanted hidden interconnections in a semiconductor device for preventing reverse engineering
US6791191B2 (en) 2001-01-24 2004-09-14 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using vias without metal terminations
US7294935B2 (en) * 2001-01-24 2007-11-13 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
US6740942B2 (en) * 2001-06-15 2004-05-25 Hrl Laboratories, Llc. Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact
US6774413B2 (en) 2001-06-15 2004-08-10 Hrl Laboratories, Llc Integrated circuit structure with programmable connector/isolator
US6897535B2 (en) 2002-05-14 2005-05-24 Hrl Laboratories, Llc Integrated circuit with reverse engineering protection
US7049667B2 (en) 2002-09-27 2006-05-23 Hrl Laboratories, Llc Conductive channel pseudo block process and circuit to inhibit reverse engineering
US6979606B2 (en) 2002-11-22 2005-12-27 Hrl Laboratories, Llc Use of silicon block process step to camouflage a false transistor
AU2003293540A1 (en) * 2002-12-13 2004-07-09 Raytheon Company Integrated circuit modification using well implants
US6799844B2 (en) 2002-12-16 2004-10-05 Xerox Corporation High shear ball check valve device and a liquid ink image producing machine using same
JP4346322B2 (ja) * 2003-02-07 2009-10-21 株式会社ルネサステクノロジ 半導体装置
US7242063B1 (en) 2004-06-29 2007-07-10 Hrl Laboratories, Llc Symmetric non-intrusive and covert technique to render a transistor permanently non-operable
US8168487B2 (en) * 2006-09-28 2012-05-01 Hrl Laboratories, Llc Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528229B1 (enExample) * 1971-03-19 1980-07-26
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions
US4023195A (en) * 1974-10-23 1977-05-10 Smc Microsystems Corporation MOS field-effect transistor structure with mesa-like contact and gate areas and selectively deeper junctions
NL185376C (nl) * 1976-10-25 1990-03-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
US4290184A (en) * 1978-03-20 1981-09-22 Texas Instruments Incorporated Method of making post-metal programmable MOS read only memory
US4268950A (en) * 1978-06-05 1981-05-26 Texas Instruments Incorporated Post-metal ion implant programmable MOS read only memory
IT1166587B (it) * 1979-01-22 1987-05-05 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari ad alta integrazione per tensioni elevate

Also Published As

Publication number Publication date
JPS622708B2 (enExample) 1987-01-21
CA1163378A (en) 1984-03-06
IE51994B1 (en) 1987-05-13
DE3164132D1 (en) 1984-07-19
EP0042643B1 (en) 1984-06-13
AU545453B2 (en) 1985-07-18
IE811379L (en) 1981-12-23
AU7203181A (en) 1982-01-07
US4374454A (en) 1983-02-22
EP0042643A1 (en) 1981-12-30
JPS5731180A (en) 1982-02-19

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BV The patent application has lapsed