JPS5528229B1 - - Google Patents
Info
- Publication number
- JPS5528229B1 JPS5528229B1 JP1517971A JP1517971A JPS5528229B1 JP S5528229 B1 JPS5528229 B1 JP S5528229B1 JP 1517971 A JP1517971 A JP 1517971A JP 1517971 A JP1517971 A JP 1517971A JP S5528229 B1 JPS5528229 B1 JP S5528229B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P14/61—
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- H10W10/0121—
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- H10W10/0126—
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- H10W10/13—
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1517971A JPS5528229B1 (enExample) | 1971-03-19 | 1971-03-19 | |
| US00235503A US3825455A (en) | 1971-03-19 | 1972-03-17 | Method of producing insulated-gate field-effect semiconductor device having a channel stopper region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1517971A JPS5528229B1 (enExample) | 1971-03-19 | 1971-03-19 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5480579A Division JPS551189A (en) | 1979-05-07 | 1979-05-07 | Semiconductor device |
| JP56055324A Division JPS5771145A (en) | 1981-04-13 | 1981-04-13 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5528229B1 true JPS5528229B1 (enExample) | 1980-07-26 |
Family
ID=11881579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1517971A Pending JPS5528229B1 (enExample) | 1971-03-19 | 1971-03-19 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3825455A (enExample) |
| JP (1) | JPS5528229B1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3962717A (en) * | 1974-10-29 | 1976-06-08 | Fairchild Camera And Instrument Corporation | Oxide isolated integrated injection logic with selective guard ring |
| NL7903158A (nl) * | 1979-04-23 | 1980-10-27 | Philips Nv | Werkwijze voor het vervaardigen van een veldeffekt- transistor met geisoleerde poortelektrode, en transistor vervaardigd door toepassing van een derge- lijke werkwijze. |
| NL8003612A (nl) * | 1980-06-23 | 1982-01-18 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze. |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2029058A1 (de) * | 1969-06-26 | 1971-01-07 | N V Philips Gloeilampenfabne ken, Eindhoven (Niederlande) | Halbleiteranordnung mit einem Feld effekttransistor mit isolierter Torelek trode |
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1971
- 1971-03-19 JP JP1517971A patent/JPS5528229B1/ja active Pending
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1972
- 1972-03-17 US US00235503A patent/US3825455A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2029058A1 (de) * | 1969-06-26 | 1971-01-07 | N V Philips Gloeilampenfabne ken, Eindhoven (Niederlande) | Halbleiteranordnung mit einem Feld effekttransistor mit isolierter Torelek trode |
Also Published As
| Publication number | Publication date |
|---|---|
| US3825455A (en) | 1974-07-23 |