JPS5528229B1 - - Google Patents

Info

Publication number
JPS5528229B1
JPS5528229B1 JP1517971A JP1517971A JPS5528229B1 JP S5528229 B1 JPS5528229 B1 JP S5528229B1 JP 1517971 A JP1517971 A JP 1517971A JP 1517971 A JP1517971 A JP 1517971A JP S5528229 B1 JPS5528229 B1 JP S5528229B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1517971A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1517971A priority Critical patent/JPS5528229B1/ja
Priority to US00235503A priority patent/US3825455A/en
Publication of JPS5528229B1 publication Critical patent/JPS5528229B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP1517971A 1971-03-19 1971-03-19 Pending JPS5528229B1 (enExample)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1517971A JPS5528229B1 (enExample) 1971-03-19 1971-03-19
US00235503A US3825455A (en) 1971-03-19 1972-03-17 Method of producing insulated-gate field-effect semiconductor device having a channel stopper region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1517971A JPS5528229B1 (enExample) 1971-03-19 1971-03-19

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP5480579A Division JPS551189A (en) 1979-05-07 1979-05-07 Semiconductor device
JP56055324A Division JPS5771145A (en) 1981-04-13 1981-04-13 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5528229B1 true JPS5528229B1 (enExample) 1980-07-26

Family

ID=11881579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1517971A Pending JPS5528229B1 (enExample) 1971-03-19 1971-03-19

Country Status (2)

Country Link
US (1) US3825455A (enExample)
JP (1) JPS5528229B1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
NL7903158A (nl) * 1979-04-23 1980-10-27 Philips Nv Werkwijze voor het vervaardigen van een veldeffekt- transistor met geisoleerde poortelektrode, en transistor vervaardigd door toepassing van een derge- lijke werkwijze.
NL8003612A (nl) * 1980-06-23 1982-01-18 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2029058A1 (de) * 1969-06-26 1971-01-07 N V Philips Gloeilampenfabne ken, Eindhoven (Niederlande) Halbleiteranordnung mit einem Feld effekttransistor mit isolierter Torelek trode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2029058A1 (de) * 1969-06-26 1971-01-07 N V Philips Gloeilampenfabne ken, Eindhoven (Niederlande) Halbleiteranordnung mit einem Feld effekttransistor mit isolierter Torelek trode

Also Published As

Publication number Publication date
US3825455A (en) 1974-07-23

Similar Documents

Publication Publication Date Title
FR2132347B1 (enExample)
JPS5528229B1 (enExample)
AU2691671A (enExample)
AU4935872A (enExample)
AU2742671A (enExample)
AU2684071A (enExample)
AU2726271A (enExample)
AU2894671A (enExample)
AU2941471A (enExample)
AU2952271A (enExample)
AU3005371A (enExample)
AU2880771A (enExample)
AU2837671A (enExample)
AU2684171A (enExample)
AU2706571A (enExample)
AU2724971A (enExample)
AU2740271A (enExample)
AU2755871A (enExample)
AU2854371A (enExample)
AU2875571A (enExample)
AU2836771A (enExample)
AU2885171A (enExample)
AU2907471A (enExample)
AU3038671A (enExample)
AU3025871A (enExample)