NL8002713A - Beeldaftastinrichting. - Google Patents
Beeldaftastinrichting. Download PDFInfo
- Publication number
- NL8002713A NL8002713A NL8002713A NL8002713A NL8002713A NL 8002713 A NL8002713 A NL 8002713A NL 8002713 A NL8002713 A NL 8002713A NL 8002713 A NL8002713 A NL 8002713A NL 8002713 A NL8002713 A NL 8002713A
- Authority
- NL
- Netherlands
- Prior art keywords
- coating
- passivation layer
- region
- wafer
- blooming
- Prior art date
Links
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 11
- 230000003667 anti-reflective effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 238000005036 potential barrier Methods 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- 239000005388 borosilicate glass Substances 0.000 claims description 4
- 230000031700 light absorption Effects 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000010894 electron beam technology Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010010099 Combined immunodeficiency Diseases 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000001360 collision-induced dissociation Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
- H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/037,832 US4228446A (en) | 1979-05-10 | 1979-05-10 | Reduced blooming device having enhanced quantum efficiency |
| US3783279 | 1979-05-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8002713A true NL8002713A (nl) | 1980-11-12 |
Family
ID=21896610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8002713A NL8002713A (nl) | 1979-05-10 | 1980-05-09 | Beeldaftastinrichting. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4228446A (https=) |
| JP (1) | JPS55151751A (https=) |
| FR (1) | FR2456382A1 (https=) |
| GB (1) | GB2048568B (https=) |
| NL (1) | NL8002713A (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4358323A (en) * | 1980-04-23 | 1982-11-09 | Rca Corporation | Low cost reduced blooming device and method for making the same |
| US4329702A (en) * | 1980-04-23 | 1982-05-11 | Rca Corporation | Low cost reduced blooming device and method for making the same |
| US4594605A (en) * | 1983-04-28 | 1986-06-10 | Rca Corporation | Imaging device having enhanced quantum efficiency |
| US4689873A (en) * | 1983-04-28 | 1987-09-01 | Rca Corporation | Imaging device having two anti-reflection layers on a surface of silicon wafer |
| JP2505767B2 (ja) * | 1986-09-18 | 1996-06-12 | キヤノン株式会社 | 光電変換装置の製造方法 |
| US4921760A (en) * | 1986-09-26 | 1990-05-01 | Minolta Camera Kabushiki Kaisha | Anti-reflection coating of optical part made of synthetic resin |
| US4819039A (en) * | 1986-12-22 | 1989-04-04 | American Telephone And Telegraph Co. At&T Laboratories | Devices and device fabrication with borosilicate glass |
| US6246098B1 (en) * | 1996-12-31 | 2001-06-12 | Intel Corporation | Apparatus for reducing reflections off the surface of a semiconductor surface |
| US8247881B2 (en) * | 2009-04-27 | 2012-08-21 | University Of Seoul Industry Cooperation Foundation | Photodiodes with surface plasmon couplers |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3548233A (en) * | 1968-11-29 | 1970-12-15 | Rca Corp | Charge storage device with pn junction diode array target having semiconductor contact pads |
| JPS5033732B1 (https=) * | 1970-10-23 | 1975-11-01 | ||
| US3786294A (en) * | 1971-02-22 | 1974-01-15 | Gen Electric | Protective coating for diode array targets |
| US3755015A (en) * | 1971-12-10 | 1973-08-28 | Gen Electric | Anti-reflection coating for semiconductor diode array targets |
| US3792197A (en) * | 1972-07-31 | 1974-02-12 | Bell Telephone Labor Inc | Solid-state diode array camera tube having electronic control of light sensitivity |
| US3904453A (en) * | 1973-08-22 | 1975-09-09 | Communications Satellite Corp | Fabrication of silicon solar cell with anti reflection film |
| GB1554590A (en) * | 1975-10-08 | 1979-10-24 | Rca Corp | Sensing elements for charge storage devices |
-
1979
- 1979-05-10 US US06/037,832 patent/US4228446A/en not_active Expired - Lifetime
-
1980
- 1980-04-10 FR FR8008029A patent/FR2456382A1/fr active Granted
- 1980-04-24 GB GB8013503A patent/GB2048568B/en not_active Expired
- 1980-05-06 JP JP6046580A patent/JPS55151751A/ja active Pending
- 1980-05-09 NL NL8002713A patent/NL8002713A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2048568B (en) | 1983-05-18 |
| GB2048568A (en) | 1980-12-10 |
| US4228446A (en) | 1980-10-14 |
| JPS55151751A (en) | 1980-11-26 |
| FR2456382B1 (https=) | 1985-03-29 |
| FR2456382A1 (fr) | 1980-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| BV | The patent application has lapsed |