GB2048568B - Reduced blooming device having enhanced quantum efficiency - Google Patents

Reduced blooming device having enhanced quantum efficiency

Info

Publication number
GB2048568B
GB2048568B GB8013503A GB8013503A GB2048568B GB 2048568 B GB2048568 B GB 2048568B GB 8013503 A GB8013503 A GB 8013503A GB 8013503 A GB8013503 A GB 8013503A GB 2048568 B GB2048568 B GB 2048568B
Authority
GB
United Kingdom
Prior art keywords
quantum efficiency
enhanced quantum
blooming device
reduced blooming
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8013503A
Other languages
English (en)
Other versions
GB2048568A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB2048568A publication Critical patent/GB2048568A/en
Application granted granted Critical
Publication of GB2048568B publication Critical patent/GB2048568B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
GB8013503A 1979-05-10 1980-04-24 Reduced blooming device having enhanced quantum efficiency Expired GB2048568B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/037,832 US4228446A (en) 1979-05-10 1979-05-10 Reduced blooming device having enhanced quantum efficiency

Publications (2)

Publication Number Publication Date
GB2048568A GB2048568A (en) 1980-12-10
GB2048568B true GB2048568B (en) 1983-05-18

Family

ID=21896610

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8013503A Expired GB2048568B (en) 1979-05-10 1980-04-24 Reduced blooming device having enhanced quantum efficiency

Country Status (5)

Country Link
US (1) US4228446A (https=)
JP (1) JPS55151751A (https=)
FR (1) FR2456382A1 (https=)
GB (1) GB2048568B (https=)
NL (1) NL8002713A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4358323A (en) * 1980-04-23 1982-11-09 Rca Corporation Low cost reduced blooming device and method for making the same
US4329702A (en) * 1980-04-23 1982-05-11 Rca Corporation Low cost reduced blooming device and method for making the same
US4594605A (en) * 1983-04-28 1986-06-10 Rca Corporation Imaging device having enhanced quantum efficiency
US4689873A (en) * 1983-04-28 1987-09-01 Rca Corporation Imaging device having two anti-reflection layers on a surface of silicon wafer
JP2505767B2 (ja) * 1986-09-18 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
US4921760A (en) * 1986-09-26 1990-05-01 Minolta Camera Kabushiki Kaisha Anti-reflection coating of optical part made of synthetic resin
US4819039A (en) * 1986-12-22 1989-04-04 American Telephone And Telegraph Co. At&T Laboratories Devices and device fabrication with borosilicate glass
US6246098B1 (en) * 1996-12-31 2001-06-12 Intel Corporation Apparatus for reducing reflections off the surface of a semiconductor surface
US8247881B2 (en) * 2009-04-27 2012-08-21 University Of Seoul Industry Cooperation Foundation Photodiodes with surface plasmon couplers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3548233A (en) * 1968-11-29 1970-12-15 Rca Corp Charge storage device with pn junction diode array target having semiconductor contact pads
JPS5033732B1 (https=) * 1970-10-23 1975-11-01
US3786294A (en) * 1971-02-22 1974-01-15 Gen Electric Protective coating for diode array targets
US3755015A (en) * 1971-12-10 1973-08-28 Gen Electric Anti-reflection coating for semiconductor diode array targets
US3792197A (en) * 1972-07-31 1974-02-12 Bell Telephone Labor Inc Solid-state diode array camera tube having electronic control of light sensitivity
US3904453A (en) * 1973-08-22 1975-09-09 Communications Satellite Corp Fabrication of silicon solar cell with anti reflection film
GB1554590A (en) * 1975-10-08 1979-10-24 Rca Corp Sensing elements for charge storage devices

Also Published As

Publication number Publication date
GB2048568A (en) 1980-12-10
NL8002713A (nl) 1980-11-12
US4228446A (en) 1980-10-14
JPS55151751A (en) 1980-11-26
FR2456382B1 (https=) 1985-03-29
FR2456382A1 (fr) 1980-12-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee