NL7905381A - Werkwijze voor het selectief modificeren van geintegreerde halfgeleiderinrichtingen. - Google Patents
Werkwijze voor het selectief modificeren van geintegreerde halfgeleiderinrichtingen. Download PDFInfo
- Publication number
- NL7905381A NL7905381A NL7905381A NL7905381A NL7905381A NL 7905381 A NL7905381 A NL 7905381A NL 7905381 A NL7905381 A NL 7905381A NL 7905381 A NL7905381 A NL 7905381A NL 7905381 A NL7905381 A NL 7905381A
- Authority
- NL
- Netherlands
- Prior art keywords
- ions
- photo
- passivation layer
- layer
- resistant layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 51
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims description 123
- 238000002161 passivation Methods 0.000 claims description 48
- 150000002500 ions Chemical class 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 238000002513 implantation Methods 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 3
- 229920000535 Tan II Polymers 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 3
- 239000011810 insulating material Substances 0.000 claims 2
- 235000013601 eggs Nutrition 0.000 claims 1
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000000992 sputter etching Methods 0.000 description 14
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 230000015654 memory Effects 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000003801 milling Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 235000007575 Calluna vulgaris Nutrition 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- KJKKZSJXJPPWSI-UHFFFAOYSA-N n,6-dimethylhept-5-en-2-amine;1,5-dimethyl-2-phenylpyrazol-3-one;n-(4-hydroxyphenyl)acetamide;2,3,4,5-tetrahydroxyhexanedioic acid;2,2,2-trichloroethane-1,1-diol Chemical compound OC(O)C(Cl)(Cl)Cl.OC(O)C(Cl)(Cl)Cl.CNC(C)CCC=C(C)C.CC(=O)NC1=CC=C(O)C=C1.CN1C(C)=CC(=O)N1C1=CC=CC=C1.OC(=O)C(O)C(O)C(O)C(O)C(O)=O KJKKZSJXJPPWSI-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 230000003711 photoprotective effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/38—Doping programmed, e.g. mask ROM
- H10B20/387—Source region or drain region doping programmed
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/091—Laser beam processing of fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/143—Shadow masking
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93073978 | 1978-08-03 | ||
| US05/930,739 US4208780A (en) | 1978-08-03 | 1978-08-03 | Last-stage programming of semiconductor integrated circuits including selective removal of passivation layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7905381A true NL7905381A (nl) | 1980-02-05 |
Family
ID=25459689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7905381A NL7905381A (nl) | 1978-08-03 | 1979-07-10 | Werkwijze voor het selectief modificeren van geintegreerde halfgeleiderinrichtingen. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4208780A (de) |
| JP (1) | JPS5522890A (de) |
| DE (1) | DE2916843A1 (de) |
| FR (1) | FR2432767A1 (de) |
| GB (1) | GB2028581B (de) |
| NL (1) | NL7905381A (de) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4294001A (en) * | 1979-01-08 | 1981-10-13 | Texas Instruments Incorporated | Method of making implant programmable metal gate MOS read only memory |
| US4342100A (en) * | 1979-01-08 | 1982-07-27 | Texas Instruments Incorporated | Implant programmable metal gate MOS read only memory |
| US4294002A (en) * | 1979-05-21 | 1981-10-13 | International Business Machines Corp. | Making a short-channel FET |
| US4282646A (en) * | 1979-08-20 | 1981-08-11 | International Business Machines Corporation | Method of making a transistor array |
| US4514897A (en) * | 1979-09-04 | 1985-05-07 | Texas Instruments Incorporated | Electrically programmable floating gate semiconductor memory device |
| US4364167A (en) * | 1979-11-28 | 1982-12-21 | General Motors Corporation | Programming an IGFET read-only-memory |
| US4336647A (en) * | 1979-12-21 | 1982-06-29 | Texas Instruments Incorporated | Method of making implant programmable N-channel read only memory |
| US4356042A (en) * | 1980-11-07 | 1982-10-26 | Mostek Corporation | Method for fabricating a semiconductor read only memory |
| US4698899A (en) * | 1983-10-19 | 1987-10-13 | Gould Inc. | Field effect transistor |
| WO1986001931A1 (en) * | 1984-09-07 | 1986-03-27 | Pa Consulting Services Limited | Method and apparatus for loading information into an integrated circuit semiconductor device |
| EP0233862A1 (de) * | 1985-08-27 | 1987-09-02 | LOCKHEED MISSILES & SPACE COMPANY, INC. | Verfahren zum ausrichten der gate bei der herstellung von halbleiteranordnungen |
| IT1186430B (it) * | 1985-12-12 | 1987-11-26 | Sgs Microelettrica Spa | Rpocedimento per la realizzazione di memorie a sola lettura in tecnologia nmos programmate mediante impiantazione ionica e memoria a sola lettura ottenuta mediante tale procedimento |
| JPS62120127U (de) * | 1986-01-22 | 1987-07-30 | ||
| WO1990007794A1 (de) * | 1988-12-23 | 1990-07-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hochspannungstransistor-anordnung in cmos-technologie |
| IT1239707B (it) * | 1990-03-15 | 1993-11-15 | St Microelectrics Srl | Processo per la realizzazione di una cella di memoria rom a bassa capacita' di drain |
| JP2835216B2 (ja) * | 1991-09-12 | 1998-12-14 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2771057B2 (ja) * | 1991-10-21 | 1998-07-02 | シャープ株式会社 | 半導体装置の製造方法 |
| EP0575688B1 (de) * | 1992-06-26 | 1998-05-27 | STMicroelectronics S.r.l. | Programmierung von LDD-ROM-Zellen |
| US5306657A (en) * | 1993-03-22 | 1994-04-26 | United Microelectronics Corporation | Process for forming an FET read only memory device |
| US5633202A (en) * | 1994-09-30 | 1997-05-27 | Intel Corporation | High tensile nitride layer |
| US5459086A (en) * | 1994-11-07 | 1995-10-17 | United Microelectronics Corporation | Metal via sidewall tilt angle implant for SOG |
| DE19505293A1 (de) * | 1995-02-16 | 1996-08-22 | Siemens Ag | Mehrwertige Festwertspeicherzelle mit verbessertem Störabstand |
| TW335537B (en) * | 1996-11-25 | 1998-07-01 | United Microelectronics Corp | The ROM unit and manufacture method |
| US6027978A (en) * | 1997-01-28 | 2000-02-22 | Advanced Micro Devices, Inc. | Method of making an IGFET with a non-uniform lateral doping profile in the channel region |
| US6093951A (en) * | 1997-06-30 | 2000-07-25 | Sun Microsystems, Inc. | MOS devices with retrograde pocket regions |
| US6249027B1 (en) | 1998-06-08 | 2001-06-19 | Sun Microsystems, Inc. | Partially depleted SOI device having a dedicated single body bias means |
| JP3137077B2 (ja) * | 1998-06-16 | 2001-02-19 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| US6965165B2 (en) * | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
| US6228777B1 (en) | 1999-06-08 | 2001-05-08 | Intel Corporation | Integrated circuit with borderless contacts |
| US6960510B2 (en) * | 2002-07-01 | 2005-11-01 | International Business Machines Corporation | Method of making sub-lithographic features |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1047390A (de) * | 1963-05-20 | 1900-01-01 | ||
| BE759057A (de) * | 1969-11-19 | 1971-05-17 | Philips Nv | |
| US3775191A (en) * | 1971-06-28 | 1973-11-27 | Bell Canada Northern Electric | Modification of channel regions in insulated gate field effect transistors |
| GB1534896A (en) * | 1975-05-19 | 1978-12-06 | Itt | Direct metal contact to buried layer |
| US4080718A (en) * | 1976-12-14 | 1978-03-28 | Smc Standard Microsystems Corporation | Method of modifying electrical characteristics of MOS devices using ion implantation |
-
1978
- 1978-08-03 US US05/930,739 patent/US4208780A/en not_active Expired - Lifetime
-
1979
- 1979-04-24 FR FR7910373A patent/FR2432767A1/fr active Granted
- 1979-04-26 DE DE19792916843 patent/DE2916843A1/de active Granted
- 1979-04-27 JP JP5244779A patent/JPS5522890A/ja active Granted
- 1979-05-30 GB GB7918750A patent/GB2028581B/en not_active Expired
- 1979-07-10 NL NL7905381A patent/NL7905381A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5522890A (en) | 1980-02-18 |
| US4208780A (en) | 1980-06-24 |
| DE2916843A1 (de) | 1980-02-21 |
| GB2028581A (en) | 1980-03-05 |
| JPS6260817B2 (de) | 1987-12-18 |
| DE2916843C2 (de) | 1988-09-29 |
| FR2432767B3 (de) | 1982-01-22 |
| FR2432767A1 (fr) | 1980-02-29 |
| GB2028581B (en) | 1983-01-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| BV | The patent application has lapsed |