NL7713114A - Werkwijze voor het vervaardigen van halfge- leiderinrichtingen. - Google Patents
Werkwijze voor het vervaardigen van halfge- leiderinrichtingen.Info
- Publication number
- NL7713114A NL7713114A NL7713114A NL7713114A NL7713114A NL 7713114 A NL7713114 A NL 7713114A NL 7713114 A NL7713114 A NL 7713114A NL 7713114 A NL7713114 A NL 7713114A NL 7713114 A NL7713114 A NL 7713114A
- Authority
- NL
- Netherlands
- Prior art keywords
- procedure
- conductor devices
- manufacturing semi
- semi
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49789—Obtaining plural product pieces from unitary workpiece
- Y10T29/4979—Breaking through weakened portion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Dicing (AREA)
- Weting (AREA)
- Thyristors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14431176A JPS5368567A (en) | 1976-11-30 | 1976-11-30 | Production of semiconductor device |
JP51144312A JPS5826653B2 (ja) | 1976-11-30 | 1976-11-30 | 半導体装置の製造方法 |
JP15107576A JPS5374358A (en) | 1976-12-15 | 1976-12-15 | Manufacture of semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7713114A true NL7713114A (nl) | 1978-06-01 |
NL177866B NL177866B (nl) | 1985-07-01 |
NL177866C NL177866C (nl) | 1985-12-02 |
Family
ID=27318800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7713114,A NL177866C (nl) | 1976-11-30 | 1977-11-29 | Werkwijze voor het vervaardigen van afzonderlijke halfgeleiderelementen, waarbij in een schijfvormig lichaam van halfgeleidermateriaal gevormde halfgeleiderelementen van elkaar worden gescheiden door het schijfvormige lichaam te breken. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4304043A (nl) |
DE (1) | DE2753207C2 (nl) |
GB (1) | GB1559717A (nl) |
NL (1) | NL177866C (nl) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2082836A (en) * | 1980-08-20 | 1982-03-10 | Philips Electronic Associated | Corrugated semiconductor devices |
JPS63124486A (ja) * | 1986-11-13 | 1988-05-27 | Mitsubishi Electric Corp | 半導体レ−ザの製造方法 |
FR2609212B1 (fr) * | 1986-12-29 | 1989-10-20 | Thomson Semiconducteurs | Procede de decoupe collective, par voie chimique, de dispositifs semiconducteurs, et dispositif decoupe par ce procede |
US5017512A (en) * | 1989-07-27 | 1991-05-21 | Mitsubishi Denki Kabushiki Kaisha | Wafer having a dicing area having a step region covered with a conductive layer and method of manufacturing the same |
JP2003510811A (ja) * | 1999-09-22 | 2003-03-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体装置の製造方法 |
JP2006140294A (ja) * | 2004-11-11 | 2006-06-01 | Fujitsu Ltd | 半導体基板、半導体装置の製造方法及び半導体装置の試験方法 |
US20160148875A1 (en) * | 2013-08-08 | 2016-05-26 | Sharp Kabushiki Kaisha | Semiconductor element substrate, and method for producing same |
WO2017217108A1 (ja) * | 2016-06-13 | 2017-12-21 | バンドー化学株式会社 | 研磨材 |
CN109307981B (zh) * | 2017-07-26 | 2022-03-22 | 天津环鑫科技发展有限公司 | 一种gpp生产的光刻版工艺 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1221363B (de) * | 1964-04-25 | 1966-07-21 | Telefunken Patent | Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen |
US3493820A (en) * | 1966-12-01 | 1970-02-03 | Raytheon Co | Airgap isolated semiconductor device |
US3513022A (en) * | 1967-04-26 | 1970-05-19 | Rca Corp | Method of fabricating semiconductor devices |
US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
US3716429A (en) * | 1970-06-18 | 1973-02-13 | Rca Corp | Method of making semiconductor devices |
DE2115305C2 (de) * | 1971-03-30 | 1982-09-30 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Solarzelle aus einem Halbleiterkörper |
US3783044A (en) * | 1971-04-09 | 1974-01-01 | Motorola Inc | Photoresist keys and depth indicator |
US3972113A (en) * | 1973-05-14 | 1976-08-03 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor devices |
US3941625A (en) * | 1973-10-11 | 1976-03-02 | General Electric Company | Glass passivated gold diffused SCR pellet and method for making |
US3928094A (en) * | 1975-01-16 | 1975-12-23 | Fairchild Camera Instr Co | Method of aligning a wafer beneath a mask and system therefor and wafer having a unique alignment pattern |
US3968563A (en) * | 1975-03-27 | 1976-07-13 | E. I. Du Pont De Nemours And Company | Precision registration system for leads |
JPS5258379A (en) * | 1975-11-08 | 1977-05-13 | Toshiba Corp | Production of semiconductor element |
-
1977
- 1977-11-29 NL NLAANVRAGE7713114,A patent/NL177866C/nl not_active IP Right Cessation
- 1977-11-29 DE DE2753207A patent/DE2753207C2/de not_active Expired
- 1977-11-30 GB GB49911/77A patent/GB1559717A/en not_active Expired
-
1980
- 1980-04-07 US US06/137,971 patent/US4304043A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2753207A1 (de) | 1978-06-01 |
NL177866B (nl) | 1985-07-01 |
NL177866C (nl) | 1985-12-02 |
GB1559717A (en) | 1980-01-23 |
DE2753207C2 (de) | 1989-10-12 |
US4304043A (en) | 1981-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 19960601 |