NL7711278A - - Google Patents

Info

Publication number
NL7711278A
NL7711278A NL7711278A NL7711278A NL7711278A NL 7711278 A NL7711278 A NL 7711278A NL 7711278 A NL7711278 A NL 7711278A NL 7711278 A NL7711278 A NL 7711278A NL 7711278 A NL7711278 A NL 7711278A
Authority
NL
Netherlands
Application number
NL7711278A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7711278A publication Critical patent/NL7711278A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Electroluminescent Light Sources (AREA)
  • Bipolar Transistors (AREA)
NL7711278A 1976-10-28 1977-10-14 NL7711278A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/736,646 US4113512A (en) 1976-10-28 1976-10-28 Technique for preventing forward biased epi-isolation degradation

Publications (1)

Publication Number Publication Date
NL7711278A true NL7711278A (en:Method) 1978-05-03

Family

ID=24960699

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7711278A NL7711278A (en:Method) 1976-10-28 1977-10-14

Country Status (12)

Country Link
US (1) US4113512A (en:Method)
JP (1) JPS5354490A (en:Method)
BR (1) BR7706777A (en:Method)
CA (1) CA1057419A (en:Method)
CH (1) CH619072A5 (en:Method)
DE (1) DE2746700A1 (en:Method)
ES (1) ES463621A1 (en:Method)
FR (1) FR2369687A1 (en:Method)
GB (1) GB1584990A (en:Method)
IT (1) IT1114162B (en:Method)
NL (1) NL7711278A (en:Method)
SE (1) SE431272B (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178190A (en) * 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
US5041896A (en) * 1989-07-06 1991-08-20 General Electric Company Symmetrical blocking high voltage semiconductor device and method of fabrication
TW274628B (en:Method) * 1994-06-03 1996-04-21 At & T Corp
JP3408098B2 (ja) * 1997-02-20 2003-05-19 キヤノン株式会社 固体撮像装置及びx線撮像装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1050805A (en:Method) * 1964-06-23 1900-01-01
US3551760A (en) * 1966-03-28 1970-12-29 Hitachi Ltd Semiconductor device with an inversion preventing layer formed in a diffused region
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices
US3631311A (en) * 1968-03-26 1971-12-28 Telefunken Patent Semiconductor circuit arrangement with integrated base leakage resistance
US3964705A (en) * 1970-12-23 1976-06-22 Bassani S.P.A. Frame for the mounting of interchangeable electrical units
US3697827A (en) * 1971-02-09 1972-10-10 Unitrode Corp Structure and formation of semiconductors with transverse conductivity gradients
US3760239A (en) * 1971-06-09 1973-09-18 Cress S Coaxial inverted geometry transistor having buried emitter
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
US3921199A (en) * 1973-07-31 1975-11-18 Texas Instruments Inc Junction breakdown voltage by means of ion implanted compensation guard ring
US4021270A (en) * 1976-06-28 1977-05-03 Motorola, Inc. Double master mask process for integrated circuit manufacture

Also Published As

Publication number Publication date
JPS5424270B2 (en:Method) 1979-08-20
SE431272B (sv) 1984-01-23
DE2746700C2 (en:Method) 1988-12-22
SE7711985L (sv) 1978-04-29
FR2369687B1 (en:Method) 1980-08-01
US4113512A (en) 1978-09-12
DE2746700A1 (de) 1978-05-11
CH619072A5 (en:Method) 1980-08-29
ES463621A1 (es) 1978-07-01
FR2369687A1 (fr) 1978-05-26
CA1057419A (en) 1979-06-26
GB1584990A (en) 1981-02-18
JPS5354490A (en) 1978-05-17
BR7706777A (pt) 1978-08-22
IT1114162B (it) 1986-01-27

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BV The patent application has lapsed