NL7711278A - - Google Patents
Info
- Publication number
- NL7711278A NL7711278A NL7711278A NL7711278A NL7711278A NL 7711278 A NL7711278 A NL 7711278A NL 7711278 A NL7711278 A NL 7711278A NL 7711278 A NL7711278 A NL 7711278A NL 7711278 A NL7711278 A NL 7711278A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
-
- H10W10/031—
-
- H10W10/30—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/736,646 US4113512A (en) | 1976-10-28 | 1976-10-28 | Technique for preventing forward biased epi-isolation degradation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7711278A true NL7711278A (cg-RX-API-DMAC10.html) | 1978-05-03 |
Family
ID=24960699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7711278A NL7711278A (cg-RX-API-DMAC10.html) | 1976-10-28 | 1977-10-14 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4113512A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5354490A (cg-RX-API-DMAC10.html) |
| BR (1) | BR7706777A (cg-RX-API-DMAC10.html) |
| CA (1) | CA1057419A (cg-RX-API-DMAC10.html) |
| CH (1) | CH619072A5 (cg-RX-API-DMAC10.html) |
| DE (1) | DE2746700A1 (cg-RX-API-DMAC10.html) |
| ES (1) | ES463621A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2369687A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1584990A (cg-RX-API-DMAC10.html) |
| IT (1) | IT1114162B (cg-RX-API-DMAC10.html) |
| NL (1) | NL7711278A (cg-RX-API-DMAC10.html) |
| SE (1) | SE431272B (cg-RX-API-DMAC10.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4178190A (en) * | 1975-06-30 | 1979-12-11 | Rca Corporation | Method of making a bipolar transistor with high-low emitter impurity concentration |
| US5041896A (en) * | 1989-07-06 | 1991-08-20 | General Electric Company | Symmetrical blocking high voltage semiconductor device and method of fabrication |
| TW274628B (cg-RX-API-DMAC10.html) * | 1994-06-03 | 1996-04-21 | At & T Corp | |
| JP3408098B2 (ja) * | 1997-02-20 | 2003-05-19 | キヤノン株式会社 | 固体撮像装置及びｘ線撮像装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1050805A (cg-RX-API-DMAC10.html) * | 1964-06-23 | 1900-01-01 | ||
| US3551760A (en) * | 1966-03-28 | 1970-12-29 | Hitachi Ltd | Semiconductor device with an inversion preventing layer formed in a diffused region |
| US3653988A (en) * | 1968-02-05 | 1972-04-04 | Bell Telephone Labor Inc | Method of forming monolithic semiconductor integrated circuit devices |
| US3631311A (en) * | 1968-03-26 | 1971-12-28 | Telefunken Patent | Semiconductor circuit arrangement with integrated base leakage resistance |
| US3964705A (en) * | 1970-12-23 | 1976-06-22 | Bassani S.P.A. | Frame for the mounting of interchangeable electrical units |
| US3697827A (en) * | 1971-02-09 | 1972-10-10 | Unitrode Corp | Structure and formation of semiconductors with transverse conductivity gradients |
| US3760239A (en) * | 1971-06-09 | 1973-09-18 | Cress S | Coaxial inverted geometry transistor having buried emitter |
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| US3921199A (en) * | 1973-07-31 | 1975-11-18 | Texas Instruments Inc | Junction breakdown voltage by means of ion implanted compensation guard ring |
| US4021270A (en) * | 1976-06-28 | 1977-05-03 | Motorola, Inc. | Double master mask process for integrated circuit manufacture |
-
1976
- 1976-10-28 US US05/736,646 patent/US4113512A/en not_active Expired - Lifetime
-
1977
- 1977-08-31 JP JP10373377A patent/JPS5354490A/ja active Granted
- 1977-09-09 FR FR7727688A patent/FR2369687A1/fr active Granted
- 1977-09-20 IT IT27706/77A patent/IT1114162B/it active
- 1977-09-26 CA CA287,528A patent/CA1057419A/en not_active Expired
- 1977-09-30 GB GB40835/77A patent/GB1584990A/en not_active Expired
- 1977-10-05 CH CH1215777A patent/CH619072A5/de not_active IP Right Cessation
- 1977-10-07 BR BR7706777A patent/BR7706777A/pt unknown
- 1977-10-14 NL NL7711278A patent/NL7711278A/xx not_active Application Discontinuation
- 1977-10-18 DE DE19772746700 patent/DE2746700A1/de active Granted
- 1977-10-25 SE SE7711985A patent/SE431272B/sv unknown
- 1977-10-27 ES ES463621A patent/ES463621A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE7711985L (sv) | 1978-04-29 |
| SE431272B (sv) | 1984-01-23 |
| US4113512A (en) | 1978-09-12 |
| ES463621A1 (es) | 1978-07-01 |
| FR2369687A1 (fr) | 1978-05-26 |
| GB1584990A (en) | 1981-02-18 |
| CH619072A5 (cg-RX-API-DMAC10.html) | 1980-08-29 |
| DE2746700A1 (de) | 1978-05-11 |
| CA1057419A (en) | 1979-06-26 |
| JPS5354490A (en) | 1978-05-17 |
| IT1114162B (it) | 1986-01-27 |
| FR2369687B1 (cg-RX-API-DMAC10.html) | 1980-08-01 |
| JPS5424270B2 (cg-RX-API-DMAC10.html) | 1979-08-20 |
| DE2746700C2 (cg-RX-API-DMAC10.html) | 1988-12-22 |
| BR7706777A (pt) | 1978-08-22 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BV | The patent application has lapsed |