NL7613608A - Protective coating contg. siloxane for semiconductor elements - which becomes permeable to gases at temps. above normal working temp. of element - Google Patents

Protective coating contg. siloxane for semiconductor elements - which becomes permeable to gases at temps. above normal working temp. of element

Info

Publication number
NL7613608A
NL7613608A NL7613608A NL7613608A NL7613608A NL 7613608 A NL7613608 A NL 7613608A NL 7613608 A NL7613608 A NL 7613608A NL 7613608 A NL7613608 A NL 7613608A NL 7613608 A NL7613608 A NL 7613608A
Authority
NL
Netherlands
Prior art keywords
temps
siloxane
gases
normal working
coating
Prior art date
Application number
NL7613608A
Other languages
Dutch (nl)
Other versions
NL185696C (en
NL185696B (en
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of NL7613608A publication Critical patent/NL7613608A/en
Publication of NL185696B publication Critical patent/NL185696B/en
Application granted granted Critical
Publication of NL185696C publication Critical patent/NL185696C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The element comprises a series of regions of opposite conductivity, an end portion of at least one pn junction lying on the element's surface. The element is coated in selected areas, including the terminal portion of at least one pn junction, with a layer (pref. >=1 mu) of polymeric material. The coating, which contains a siloxane, imparts such properties to the element during use that the layer is impermeable at prevailing temps. When temps. in excess of normal working temp. are experienced, the coating becomes permeable to a selected gp. of gases. Used in the prodn. of thyristors, diodes etc. Application of coating overcomes prior problems such as surface breakdown under heavy loading and high surface leakage. A suitable coating material is prepd. by reaction of benzophenonetetracarboxylic anhydride, methylenedianilineand bis-(5-aminopropyl)tetramethyldisiloxane.
NL7613608A 1975-12-11 1976-12-07 SEMICONDUCTOR ELEMENT. NL185696C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63986875A 1975-12-11 1975-12-11
US63986975A 1975-12-11 1975-12-11

Publications (3)

Publication Number Publication Date
NL7613608A true NL7613608A (en) 1977-06-14
NL185696B NL185696B (en) 1990-01-16
NL185696C NL185696C (en) 1990-06-18

Family

ID=27093413

Family Applications (2)

Application Number Title Priority Date Filing Date
NL7613609A NL185411C (en) 1975-12-11 1976-12-07 METHOD FOR TREATING A SURFACE SECTION OF A SEMICONDUCTOR ELEMENT AND SEMI-CONDUCTOR ELEMENT SO OBTAINED.
NL7613608A NL185696C (en) 1975-12-11 1976-12-07 SEMICONDUCTOR ELEMENT.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL7613609A NL185411C (en) 1975-12-11 1976-12-07 METHOD FOR TREATING A SURFACE SECTION OF A SEMICONDUCTOR ELEMENT AND SEMI-CONDUCTOR ELEMENT SO OBTAINED.

Country Status (1)

Country Link
NL (2) NL185411C (en)

Also Published As

Publication number Publication date
NL7613609A (en) 1977-06-14
NL185696C (en) 1990-06-18
NL185411C (en) 1990-04-02
NL185411B (en) 1989-11-01
NL185696B (en) 1990-01-16

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee