JPS5640249A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5640249A JPS5640249A JP11618079A JP11618079A JPS5640249A JP S5640249 A JPS5640249 A JP S5640249A JP 11618079 A JP11618079 A JP 11618079A JP 11618079 A JP11618079 A JP 11618079A JP S5640249 A JPS5640249 A JP S5640249A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- 100pts
- hardening
- leakage current
- extremely small
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Abstract
PURPOSE:To obtain a device having an extremely small leakage current by containing polyimide resin powders in Si resin to coat a P-N junction section wherein heating treatment is applied after hardening the Si resin. CONSTITUTION:Polyimide resin powders of 5-100pts.wt. having a grain diameter of about 0.5-10mu is added to Si resin of 100pts.wt. and the Si resin is left in the air under the presence of moisture and hardening is sufficiently progressed. Next, heating is applied for 10-24hr in stages, at 50 deg.C for the first stage and at 200 deg.C or over for the final stage or in successively. In this composition, reverse leakage current becomes extremely small and a high reliability protective film will be obtained by protecting the exposed surface of the P-N junction of a semiconductor element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11618079A JPS5640249A (en) | 1979-09-12 | 1979-09-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11618079A JPS5640249A (en) | 1979-09-12 | 1979-09-12 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5640249A true JPS5640249A (en) | 1981-04-16 |
JPS6154248B2 JPS6154248B2 (en) | 1986-11-21 |
Family
ID=14680775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11618079A Granted JPS5640249A (en) | 1979-09-12 | 1979-09-12 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5640249A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4952662A (en) * | 1988-02-12 | 1990-08-28 | Huels Aktiengaellscaft | Molding compounds comprising a thermoplastically processible, aromatic polyamide |
-
1979
- 1979-09-12 JP JP11618079A patent/JPS5640249A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4952662A (en) * | 1988-02-12 | 1990-08-28 | Huels Aktiengaellscaft | Molding compounds comprising a thermoplastically processible, aromatic polyamide |
Also Published As
Publication number | Publication date |
---|---|
JPS6154248B2 (en) | 1986-11-21 |
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