NL7604045A - Halfgeleider-geheugenorgaan. - Google Patents

Halfgeleider-geheugenorgaan.

Info

Publication number
NL7604045A
NL7604045A NL7604045A NL7604045A NL7604045A NL 7604045 A NL7604045 A NL 7604045A NL 7604045 A NL7604045 A NL 7604045A NL 7604045 A NL7604045 A NL 7604045A NL 7604045 A NL7604045 A NL 7604045A
Authority
NL
Netherlands
Prior art keywords
semiconductor memory
memory organ
organ
semiconductor
memory
Prior art date
Application number
NL7604045A
Other languages
English (en)
Dutch (nl)
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of NL7604045A publication Critical patent/NL7604045A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
NL7604045A 1975-04-18 1976-04-15 Halfgeleider-geheugenorgaan. NL7604045A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50046321A JPS51122383A (en) 1975-04-18 1975-04-18 Semiconductor memory

Publications (1)

Publication Number Publication Date
NL7604045A true NL7604045A (nl) 1976-10-20

Family

ID=12743889

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7604045A NL7604045A (nl) 1975-04-18 1976-04-15 Halfgeleider-geheugenorgaan.

Country Status (3)

Country Link
US (1) US4062037A (US08063081-20111122-C00044.png)
JP (1) JPS51122383A (US08063081-20111122-C00044.png)
NL (1) NL7604045A (US08063081-20111122-C00044.png)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
DE2706623A1 (de) * 1977-02-16 1978-08-17 Siemens Ag Mis-fet fuer hohe source-drain-spannungen
US4353082A (en) * 1977-07-29 1982-10-05 Texas Instruments Incorporated Buried sense line V-groove MOS random access memory
US4163985A (en) * 1977-09-30 1979-08-07 The United States Of America As Represented By The Secretary Of The Air Force Nonvolatile punch through memory cell with buried n+ region in channel
US4471368A (en) * 1977-10-13 1984-09-11 Mohsen Amr M Dynamic RAM memory and vertical charge coupled dynamic storage cell therefor
JPS5718356A (en) * 1980-07-07 1982-01-30 Mitsubishi Electric Corp Semiconductor memory storage
US6365474B1 (en) * 2000-06-22 2002-04-02 Motorola, Inc. Method of fabricating an integrated circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997799A (en) * 1975-09-15 1976-12-14 Baker Roger T Semiconductor-device for the storage of binary data

Also Published As

Publication number Publication date
JPS5549778B2 (US08063081-20111122-C00044.png) 1980-12-13
JPS51122383A (en) 1976-10-26
US4062037A (en) 1977-12-06

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Legal Events

Date Code Title Description
BC A request for examination has been filed
A85 Still pending on 85-01-01
BV The patent application has lapsed