JPS51122383A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS51122383A
JPS51122383A JP50046321A JP4632175A JPS51122383A JP S51122383 A JPS51122383 A JP S51122383A JP 50046321 A JP50046321 A JP 50046321A JP 4632175 A JP4632175 A JP 4632175A JP S51122383 A JPS51122383 A JP S51122383A
Authority
JP
Japan
Prior art keywords
semiconductor memory
extend
memory cell
time
access time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50046321A
Other languages
English (en)
Other versions
JPS5549778B2 (ja
Inventor
Yoshiiku Togei
Akira Takei
Kunihiko Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50046321A priority Critical patent/JPS51122383A/ja
Priority to NL7604045A priority patent/NL7604045A/xx
Priority to US05/677,130 priority patent/US4062037A/en
Publication of JPS51122383A publication Critical patent/JPS51122383A/ja
Publication of JPS5549778B2 publication Critical patent/JPS5549778B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0733Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP50046321A 1975-04-18 1975-04-18 Semiconductor memory Granted JPS51122383A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50046321A JPS51122383A (en) 1975-04-18 1975-04-18 Semiconductor memory
NL7604045A NL7604045A (nl) 1975-04-18 1976-04-15 Halfgeleider-geheugenorgaan.
US05/677,130 US4062037A (en) 1975-04-18 1976-04-15 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50046321A JPS51122383A (en) 1975-04-18 1975-04-18 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS51122383A true JPS51122383A (en) 1976-10-26
JPS5549778B2 JPS5549778B2 (ja) 1980-12-13

Family

ID=12743889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50046321A Granted JPS51122383A (en) 1975-04-18 1975-04-18 Semiconductor memory

Country Status (3)

Country Link
US (1) US4062037A (ja)
JP (1) JPS51122383A (ja)
NL (1) NL7604045A (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
DE2706623A1 (de) * 1977-02-16 1978-08-17 Siemens Ag Mis-fet fuer hohe source-drain-spannungen
US4353082A (en) * 1977-07-29 1982-10-05 Texas Instruments Incorporated Buried sense line V-groove MOS random access memory
US4163985A (en) * 1977-09-30 1979-08-07 The United States Of America As Represented By The Secretary Of The Air Force Nonvolatile punch through memory cell with buried n+ region in channel
US4471368A (en) * 1977-10-13 1984-09-11 Mohsen Amr M Dynamic RAM memory and vertical charge coupled dynamic storage cell therefor
JPS5718356A (en) * 1980-07-07 1982-01-30 Mitsubishi Electric Corp Semiconductor memory storage
US6365474B1 (en) * 2000-06-22 2002-04-02 Motorola, Inc. Method of fabricating an integrated circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997799A (en) * 1975-09-15 1976-12-14 Baker Roger T Semiconductor-device for the storage of binary data

Also Published As

Publication number Publication date
JPS5549778B2 (ja) 1980-12-13
US4062037A (en) 1977-12-06
NL7604045A (nl) 1976-10-20

Similar Documents

Publication Publication Date Title
JPS51147924A (en) Memory unit
JPS5341968A (en) Semiconductor circuit
JPS51114079A (en) Construction of semiconductor memory device
JPS52142442A (en) Memory circuit
JPS5268334A (en) Semiconductor memory
JPS5363938A (en) Dynamic memory unit
JPS51122383A (en) Semiconductor memory
JPS5247345A (en) Pattern generating equipment
JPS51123531A (en) Diode memory
JPS52103925A (en) Random access memory unit
JPS5210032A (en) Construction method of semiconductor memory unit
JPS52132A (en) Memory
JPS51140528A (en) Magnetic bubble module
JPS51118932A (en) Write-modify method of program and the device
JPS51111013A (en) Memory address system
JPS5353929A (en) Memory system
JPS51140436A (en) Magnetic bubble device
JPS524132A (en) Character style conversion system
JPS524744A (en) Magnetic bubble device
JPS51113429A (en) Hierarchy memory system
JPS5235948A (en) Information processing unit for imaginary memory system
JPS5234621A (en) Data write-in/read-out equipment
JPS51131226A (en) Memory unit
JPS51147918A (en) Memory writing circuit
JPS5252335A (en) Page control system at virtual memory system