NL7601900A - Geintegreerd circuit met een vermogentransistor- gebied en een signaaltransistorgebied. - Google Patents

Geintegreerd circuit met een vermogentransistor- gebied en een signaaltransistorgebied.

Info

Publication number
NL7601900A
NL7601900A NL7601900A NL7601900A NL7601900A NL 7601900 A NL7601900 A NL 7601900A NL 7601900 A NL7601900 A NL 7601900A NL 7601900 A NL7601900 A NL 7601900A NL 7601900 A NL7601900 A NL 7601900A
Authority
NL
Netherlands
Prior art keywords
transistor area
integrated circuit
signal
power transistor
power
Prior art date
Application number
NL7601900A
Other languages
English (en)
Dutch (nl)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of NL7601900A publication Critical patent/NL7601900A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137Collector regions of BJTs
NL7601900A 1975-02-25 1976-02-24 Geintegreerd circuit met een vermogentransistor- gebied en een signaaltransistorgebied. NL7601900A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55295475A 1975-02-25 1975-02-25

Publications (1)

Publication Number Publication Date
NL7601900A true NL7601900A (nl) 1976-08-27

Family

ID=24207513

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7601900A NL7601900A (nl) 1975-02-25 1976-02-24 Geintegreerd circuit met een vermogentransistor- gebied en een signaaltransistorgebied.

Country Status (5)

Country Link
JP (1) JPS51109781A (enExample)
CA (1) CA1056070A (enExample)
DE (2) DE7605242U1 (enExample)
GB (1) GB1534338A (enExample)
NL (1) NL7601900A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047220A (en) * 1975-12-24 1977-09-06 General Electric Company Bipolar transistor structure having low saturation resistance
US4207326A (en) * 1979-05-21 1980-06-10 Cilag-Chemie A.G. Antimicrobial quaternary pyrazole derivatives
KR100256169B1 (ko) * 1996-01-16 2000-05-15 다니구찌 이찌로오, 기타오카 다카시 반도체 장치 및 그 제조방법
US6566217B1 (en) 1996-01-16 2003-05-20 Mitsubishi Denki Kabushiki Kaisha Manufacturing process for semiconductor device

Also Published As

Publication number Publication date
DE7605242U1 (de) 1976-09-02
JPS51109781A (enExample) 1976-09-28
CA1056070A (en) 1979-06-05
DE2607089A1 (de) 1976-09-16
GB1534338A (en) 1978-12-06

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Legal Events

Date Code Title Description
BV The patent application has lapsed