NL7601900A - Geintegreerd circuit met een vermogentransistor- gebied en een signaaltransistorgebied. - Google Patents
Geintegreerd circuit met een vermogentransistor- gebied en een signaaltransistorgebied.Info
- Publication number
- NL7601900A NL7601900A NL7601900A NL7601900A NL7601900A NL 7601900 A NL7601900 A NL 7601900A NL 7601900 A NL7601900 A NL 7601900A NL 7601900 A NL7601900 A NL 7601900A NL 7601900 A NL7601900 A NL 7601900A
- Authority
- NL
- Netherlands
- Prior art keywords
- transistor area
- integrated circuit
- signal
- power transistor
- power
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55295475A | 1975-02-25 | 1975-02-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7601900A true NL7601900A (nl) | 1976-08-27 |
Family
ID=24207513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7601900A NL7601900A (nl) | 1975-02-25 | 1976-02-24 | Geintegreerd circuit met een vermogentransistor- gebied en een signaaltransistorgebied. |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS51109781A (nl) |
CA (1) | CA1056070A (nl) |
DE (2) | DE2607089A1 (nl) |
GB (1) | GB1534338A (nl) |
NL (1) | NL7601900A (nl) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4047220A (en) * | 1975-12-24 | 1977-09-06 | General Electric Company | Bipolar transistor structure having low saturation resistance |
US4207326A (en) * | 1979-05-21 | 1980-06-10 | Cilag-Chemie A.G. | Antimicrobial quaternary pyrazole derivatives |
KR100256169B1 (ko) * | 1996-01-16 | 2000-05-15 | 다니구찌 이찌로오, 기타오카 다카시 | 반도체 장치 및 그 제조방법 |
US6566217B1 (en) | 1996-01-16 | 2003-05-20 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing process for semiconductor device |
-
1976
- 1976-02-10 CA CA245,432A patent/CA1056070A/en not_active Expired
- 1976-02-11 GB GB529676A patent/GB1534338A/en not_active Expired
- 1976-02-21 DE DE19762607089 patent/DE2607089A1/de active Pending
- 1976-02-21 DE DE19767605242 patent/DE7605242U1/de not_active Expired
- 1976-02-24 NL NL7601900A patent/NL7601900A/nl not_active Application Discontinuation
- 1976-02-24 JP JP51018539A patent/JPS51109781A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CA1056070A (en) | 1979-06-05 |
GB1534338A (en) | 1978-12-06 |
DE2607089A1 (de) | 1976-09-16 |
DE7605242U1 (de) | 1976-09-02 |
JPS51109781A (nl) | 1976-09-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BV | The patent application has lapsed |