CA1056070A - Method of making an ic structure having both power and signal components - Google Patents
Method of making an ic structure having both power and signal componentsInfo
- Publication number
- CA1056070A CA1056070A CA245,432A CA245432A CA1056070A CA 1056070 A CA1056070 A CA 1056070A CA 245432 A CA245432 A CA 245432A CA 1056070 A CA1056070 A CA 1056070A
- Authority
- CA
- Canada
- Prior art keywords
- region
- signal
- power
- epitaxial layer
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000002955 isolation Methods 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55295475A | 1975-02-25 | 1975-02-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1056070A true CA1056070A (en) | 1979-06-05 |
Family
ID=24207513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA245,432A Expired CA1056070A (en) | 1975-02-25 | 1976-02-10 | Method of making an ic structure having both power and signal components |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS51109781A (enExample) |
| CA (1) | CA1056070A (enExample) |
| DE (2) | DE7605242U1 (enExample) |
| GB (1) | GB1534338A (enExample) |
| NL (1) | NL7601900A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4047220A (en) * | 1975-12-24 | 1977-09-06 | General Electric Company | Bipolar transistor structure having low saturation resistance |
| US4207326A (en) * | 1979-05-21 | 1980-06-10 | Cilag-Chemie A.G. | Antimicrobial quaternary pyrazole derivatives |
| KR100256169B1 (ko) * | 1996-01-16 | 2000-05-15 | 다니구찌 이찌로오, 기타오카 다카시 | 반도체 장치 및 그 제조방법 |
| US6566217B1 (en) | 1996-01-16 | 2003-05-20 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing process for semiconductor device |
-
1976
- 1976-02-10 CA CA245,432A patent/CA1056070A/en not_active Expired
- 1976-02-11 GB GB5296/76A patent/GB1534338A/en not_active Expired
- 1976-02-21 DE DE19767605242U patent/DE7605242U1/de not_active Expired
- 1976-02-21 DE DE19762607089 patent/DE2607089A1/de active Pending
- 1976-02-24 NL NL7601900A patent/NL7601900A/xx not_active Application Discontinuation
- 1976-02-24 JP JP51018539A patent/JPS51109781A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE7605242U1 (de) | 1976-09-02 |
| JPS51109781A (enExample) | 1976-09-28 |
| DE2607089A1 (de) | 1976-09-16 |
| GB1534338A (en) | 1978-12-06 |
| NL7601900A (nl) | 1976-08-27 |
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