NL7504463A - Versterker met veldeffecttransistor met een geisoleerde poortelektrode. - Google Patents

Versterker met veldeffecttransistor met een geisoleerde poortelektrode.

Info

Publication number
NL7504463A
NL7504463A NL7504463A NL7504463A NL7504463A NL 7504463 A NL7504463 A NL 7504463A NL 7504463 A NL7504463 A NL 7504463A NL 7504463 A NL7504463 A NL 7504463A NL 7504463 A NL7504463 A NL 7504463A
Authority
NL
Netherlands
Prior art keywords
cct
source
drain
electrode
igfet
Prior art date
Application number
NL7504463A
Other languages
English (en)
Other versions
NL153744B (nl
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL301882D priority Critical patent/NL301882A/xx
Priority to NL301883D priority patent/NL301883A/xx
Priority claimed from US245063A external-priority patent/US3917964A/en
Priority to US245055A priority patent/US3513405A/en
Priority to US245063A priority patent/US3917964A/en
Priority to BR154996/63A priority patent/BR6354996D0/pt
Priority to GB48831/63A priority patent/GB1075092A/en
Priority to GB49020/63A priority patent/GB1074577A/en
Priority to DER36810A priority patent/DE1218008B/de
Priority to NL63301882A priority patent/NL145418B/nl
Priority to SE14009/63A priority patent/SE316802B/xx
Priority to BE641361A priority patent/BE641361A/xx
Priority to DE1464396A priority patent/DE1464396B2/de
Priority to SE14008/63A priority patent/SE316834B/xx
Priority to NL63301883A priority patent/NL142293B/nl
Priority to BE641362A priority patent/BE641362A/fr
Priority to DE1789152A priority patent/DE1789152C3/de
Priority to FR957515A priority patent/FR1385674A/fr
Priority to JP38068218A priority patent/JPS4838988B1/ja
Priority to FR957516A priority patent/FR1387957A/fr
Priority to JP44071166A priority patent/JPS4923628B1/ja
Priority to NL757504463A priority patent/NL153744B/nl
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL7504463A publication Critical patent/NL7504463A/nl
Publication of NL153744B publication Critical patent/NL153744B/nl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06B—TREATING TEXTILE MATERIALS USING LIQUIDS, GASES OR VAPOURS
    • D06B23/00—Component parts, details, or accessories of apparatus or machines, specially adapted for the treating of textile materials, not restricted to a particular kind of apparatus, provided for in groups D06B1/00 - D06B21/00
    • D06B23/10—Devices for dyeing samples
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
    • H03B5/24—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Textile Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Amplifiers (AREA)
NL757504463A 1962-12-17 1975-04-15 Versterker met een veldeffecttransistor met een geisoleerde poortelektrode. NL153744B (nl)

Priority Applications (21)

Application Number Priority Date Filing Date Title
NL301882D NL301882A (nl) 1962-12-17
NL301883D NL301883A (nl) 1962-12-17
US245055A US3513405A (en) 1962-12-17 1962-12-17 Field-effect transistor amplifier
US245063A US3917964A (en) 1962-12-17 1962-12-17 Signal translation using the substrate of an insulated gate field effect transistor
BR154996/63A BR6354996D0 (pt) 1962-12-17 1963-11-29 Um dispositivo semicondutor para uso num circuito transmissor de sinais
GB48831/63A GB1075092A (en) 1962-12-17 1963-12-10 Semiconductor devices and circuits
GB49020/63A GB1074577A (en) 1962-12-17 1963-12-11 Signal translating circuits using field-effect transistors
DER36810A DE1218008B (de) 1962-12-17 1963-12-13 Verstaerkerschaltung mit isoliertem Feldeffekt-Transistor
DE1464396A DE1464396B2 (de) 1962-12-17 1963-12-16 Feldeffekttransistor mit isolierter Steuerelektrode
DE1789152A DE1789152C3 (de) 1962-12-17 1963-12-16 Signalübertragungsschaltung
BE641361A BE641361A (nl) 1962-12-17 1963-12-16
NL63301882A NL145418B (nl) 1962-12-17 1963-12-16 Ersterker met een eldeffecttransistor met een geisoleerde poortelektrode.
SE14008/63A SE316834B (nl) 1962-12-17 1963-12-16
NL63301883A NL142293B (nl) 1962-12-17 1963-12-16 Elektrische keten met een veldeffecttransistor.
BE641362A BE641362A (nl) 1962-12-17 1963-12-16
SE14009/63A SE316802B (nl) 1962-12-17 1963-12-16
FR957515A FR1385674A (fr) 1962-12-17 1963-12-17 Montage de traduction et de traitement de signaux
JP38068218A JPS4838988B1 (nl) 1962-12-17 1963-12-17
FR957516A FR1387957A (fr) 1962-12-17 1963-12-17 Montages électriques utilisant des transistors à effet de champ
JP44071166A JPS4923628B1 (nl) 1962-12-17 1969-09-08
NL757504463A NL153744B (nl) 1962-12-17 1975-04-15 Versterker met een veldeffecttransistor met een geisoleerde poortelektrode.

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US24505562A 1962-12-17 1962-12-17
US245063A US3917964A (en) 1962-12-17 1962-12-17 Signal translation using the substrate of an insulated gate field effect transistor
DE1789152A DE1789152C3 (de) 1962-12-17 1963-12-16 Signalübertragungsschaltung
NL63301882A NL145418B (nl) 1962-12-17 1963-12-16 Ersterker met een eldeffecttransistor met een geisoleerde poortelektrode.
NL757504463A NL153744B (nl) 1962-12-17 1975-04-15 Versterker met een veldeffecttransistor met een geisoleerde poortelektrode.

Publications (2)

Publication Number Publication Date
NL7504463A true NL7504463A (nl) 1975-07-31
NL153744B NL153744B (nl) 1977-06-15

Family

ID=27430753

Family Applications (1)

Application Number Title Priority Date Filing Date
NL757504463A NL153744B (nl) 1962-12-17 1975-04-15 Versterker met een veldeffecttransistor met een geisoleerde poortelektrode.

Country Status (1)

Country Link
NL (1) NL153744B (nl)

Also Published As

Publication number Publication date
NL153744B (nl) 1977-06-15

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: RCA