NL153744B - Versterker met een veldeffecttransistor met een geisoleerde poortelektrode. - Google Patents

Versterker met een veldeffecttransistor met een geisoleerde poortelektrode.

Info

Publication number
NL153744B
NL153744B NL757504463A NL7504463A NL153744B NL 153744 B NL153744 B NL 153744B NL 757504463 A NL757504463 A NL 757504463A NL 7504463 A NL7504463 A NL 7504463A NL 153744 B NL153744 B NL 153744B
Authority
NL
Netherlands
Prior art keywords
amplifier
field effect
effect transistor
isolated port
port electrode
Prior art date
Application number
NL757504463A
Other languages
English (en)
Other versions
NL7504463A (nl
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL301883D priority Critical patent/NL301883A/xx
Priority to NL301882D priority patent/NL301882A/xx
Priority claimed from US245063A external-priority patent/US3917964A/en
Priority to US245063A priority patent/US3917964A/en
Priority to US245055A priority patent/US3513405A/en
Priority to BR154996/63A priority patent/BR6354996D0/pt
Priority to GB48831/63A priority patent/GB1075092A/en
Priority to GB49020/63A priority patent/GB1074577A/en
Priority to DER36810A priority patent/DE1218008B/de
Priority to BE641361A priority patent/BE641361A/xx
Priority to SE14009/63A priority patent/SE316802B/xx
Priority to SE14008/63A priority patent/SE316834B/xx
Priority to NL63301882A priority patent/NL145418B/nl
Priority to BE641362A priority patent/BE641362A/fr
Priority to DE1464396A priority patent/DE1464396B2/de
Priority to DE1789152A priority patent/DE1789152C3/de
Priority to NL63301883A priority patent/NL142293B/nl
Priority to FR957516A priority patent/FR1387957A/fr
Priority to JP38068218A priority patent/JPS4838988B1/ja
Priority to FR957515A priority patent/FR1385674A/fr
Priority to JP44071166A priority patent/JPS4923628B1/ja
Priority to NL757504463A priority patent/NL153744B/nl
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL7504463A publication Critical patent/NL7504463A/nl
Publication of NL153744B publication Critical patent/NL153744B/nl

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3052Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06BTREATING TEXTILE MATERIALS USING LIQUIDS, GASES OR VAPOURS
    • D06B23/00Component parts, details, or accessories of apparatus or machines, specially adapted for the treating of textile materials, not restricted to a particular kind of apparatus, provided for in groups D06B1/00 - D06B21/00
    • D06B23/10Devices for dyeing samples
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/20Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
    • H03B5/24Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191Tuned amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Textile Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Amplifiers (AREA)
NL757504463A 1962-12-17 1975-04-15 Versterker met een veldeffecttransistor met een geisoleerde poortelektrode. NL153744B (nl)

Priority Applications (21)

Application Number Priority Date Filing Date Title
NL301883D NL301883A (nl) 1962-12-17
NL301882D NL301882A (nl) 1962-12-17
US245063A US3917964A (en) 1962-12-17 1962-12-17 Signal translation using the substrate of an insulated gate field effect transistor
US245055A US3513405A (en) 1962-12-17 1962-12-17 Field-effect transistor amplifier
BR154996/63A BR6354996D0 (pt) 1962-12-17 1963-11-29 Um dispositivo semicondutor para uso num circuito transmissor de sinais
GB48831/63A GB1075092A (en) 1962-12-17 1963-12-10 Semiconductor devices and circuits
GB49020/63A GB1074577A (en) 1962-12-17 1963-12-11 Signal translating circuits using field-effect transistors
DER36810A DE1218008B (de) 1962-12-17 1963-12-13 Verstaerkerschaltung mit isoliertem Feldeffekt-Transistor
NL63301882A NL145418B (nl) 1962-12-17 1963-12-16 Ersterker met een eldeffecttransistor met een geisoleerde poortelektrode.
NL63301883A NL142293B (nl) 1962-12-17 1963-12-16 Elektrische keten met een veldeffecttransistor.
SE14008/63A SE316834B (nl) 1962-12-17 1963-12-16
BE641361A BE641361A (nl) 1962-12-17 1963-12-16
BE641362A BE641362A (nl) 1962-12-17 1963-12-16
DE1464396A DE1464396B2 (de) 1962-12-17 1963-12-16 Feldeffekttransistor mit isolierter Steuerelektrode
DE1789152A DE1789152C3 (de) 1962-12-17 1963-12-16 Signalübertragungsschaltung
SE14009/63A SE316802B (nl) 1962-12-17 1963-12-16
FR957516A FR1387957A (fr) 1962-12-17 1963-12-17 Montages électriques utilisant des transistors à effet de champ
JP38068218A JPS4838988B1 (nl) 1962-12-17 1963-12-17
FR957515A FR1385674A (fr) 1962-12-17 1963-12-17 Montage de traduction et de traitement de signaux
JP44071166A JPS4923628B1 (nl) 1962-12-17 1969-09-08
NL757504463A NL153744B (nl) 1962-12-17 1975-04-15 Versterker met een veldeffecttransistor met een geisoleerde poortelektrode.

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US24505562A 1962-12-17 1962-12-17
US245063A US3917964A (en) 1962-12-17 1962-12-17 Signal translation using the substrate of an insulated gate field effect transistor
NL63301882A NL145418B (nl) 1962-12-17 1963-12-16 Ersterker met een eldeffecttransistor met een geisoleerde poortelektrode.
DE1789152A DE1789152C3 (de) 1962-12-17 1963-12-16 Signalübertragungsschaltung
NL757504463A NL153744B (nl) 1962-12-17 1975-04-15 Versterker met een veldeffecttransistor met een geisoleerde poortelektrode.

Publications (2)

Publication Number Publication Date
NL7504463A NL7504463A (nl) 1975-07-31
NL153744B true NL153744B (nl) 1977-06-15

Family

ID=27430753

Family Applications (1)

Application Number Title Priority Date Filing Date
NL757504463A NL153744B (nl) 1962-12-17 1975-04-15 Versterker met een veldeffecttransistor met een geisoleerde poortelektrode.

Country Status (1)

Country Link
NL (1) NL153744B (nl)

Also Published As

Publication number Publication date
NL7504463A (nl) 1975-07-31

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: RCA