NL7410294A - Werkwijze voor het vervaardigen van dunne filmonderdelen van gedoopt vanadiumoxyde. - Google Patents

Werkwijze voor het vervaardigen van dunne filmonderdelen van gedoopt vanadiumoxyde.

Info

Publication number
NL7410294A
NL7410294A NL7410294A NL7410294A NL7410294A NL 7410294 A NL7410294 A NL 7410294A NL 7410294 A NL7410294 A NL 7410294A NL 7410294 A NL7410294 A NL 7410294A NL 7410294 A NL7410294 A NL 7410294A
Authority
NL
Netherlands
Prior art keywords
dapted
thin film
vanadium oxide
manufacturing thin
film parts
Prior art date
Application number
NL7410294A
Other languages
English (en)
Original Assignee
Multi State Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Multi State Devices Ltd filed Critical Multi State Devices Ltd
Publication of NL7410294A publication Critical patent/NL7410294A/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H01C7/047—Vanadium oxides or oxidic compounds, e.g. VOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Thermistors And Varistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
NL7410294A 1973-08-01 1974-07-31 Werkwijze voor het vervaardigen van dunne filmonderdelen van gedoopt vanadiumoxyde. NL7410294A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US384505A US3899407A (en) 1973-08-01 1973-08-01 Method of producing thin film devices of doped vanadium oxide material

Publications (1)

Publication Number Publication Date
NL7410294A true NL7410294A (nl) 1975-02-04

Family

ID=23517577

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7410294A NL7410294A (nl) 1973-08-01 1974-07-31 Werkwijze voor het vervaardigen van dunne filmonderdelen van gedoopt vanadiumoxyde.

Country Status (9)

Country Link
US (1) US3899407A (nl)
JP (1) JPS5050294A (nl)
BE (1) BE818346A (nl)
CA (1) CA1021556A (nl)
DE (1) DE2436911B2 (nl)
FR (1) FR2246036B1 (nl)
GB (1) GB1415149A (nl)
NL (1) NL7410294A (nl)
SE (1) SE393480B (nl)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4349425A (en) * 1977-09-09 1982-09-14 Hitachi, Ltd. Transparent conductive films and methods of producing same
FR2479589A1 (fr) * 1980-04-01 1981-10-02 Thomson Csf Dispositif de protection d'une alimentation a decoupage
US4769291A (en) * 1987-02-02 1988-09-06 The Boc Group, Inc. Transparent coatings by reactive sputtering
CA2106598A1 (en) * 1991-03-25 1992-09-26 Philip James Martin Arc source macroparticle filter
US5288380A (en) * 1992-07-23 1994-02-22 The United States Of America As Represented By The Secretary Of The Army Method for fabrication of thin-film bolometric material
GB9405613D0 (en) * 1994-03-22 1994-05-11 British Tech Group Laser waveguide
JP2735147B2 (ja) * 1994-06-08 1998-04-02 工業技術院長 サーモクロミック材料の製造法
JP2764539B2 (ja) * 1994-06-24 1998-06-11 工業技術院長 サーモクロミック材料の製造方法
JP3349036B2 (ja) * 1995-06-14 2002-11-20 三菱電機株式会社 測温用抵抗体、その製法および該測温用抵抗体を用いる赤外線検知素子
WO1999062836A1 (de) 1998-06-03 1999-12-09 Meyer Bruno K Thermochrome beschichtung
US6653704B1 (en) 2002-09-24 2003-11-25 International Business Machines Corporation Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells
KR100596196B1 (ko) * 2004-01-29 2006-07-03 한국과학기술연구원 볼로메타용 산화물 박막 및 이를 이용한 적외선 감지소자
US7969771B2 (en) * 2008-09-30 2011-06-28 Seagate Technology Llc Semiconductor device with thermally coupled phase change layers
EP2597647A1 (en) * 2011-11-28 2013-05-29 Imec Selector device for memory applications
DE102012112575A1 (de) * 2012-12-18 2014-07-03 Endress + Hauser Wetzer Gmbh + Co Kg Sensorelement, Thermometer sowie Verfahren zur Bestimmung einer Temperatur
DE102012112574A1 (de) 2012-12-18 2014-06-18 Endress + Hauser Wetzer Gmbh + Co. Kg Sensorelement, Thermometer sowie Verfahren zur Bestimmung einer Temperatur
CN104178738A (zh) * 2014-08-14 2014-12-03 电子科技大学 一种无相变高电阻温度系数的掺钛氧化钒薄膜的制备方法
EP3411511A1 (en) * 2016-02-04 2018-12-12 Ecole Polytechnique Federale de Lausanne (EPFL) Coating for optical and electronic applications
RU2623573C1 (ru) * 2016-04-29 2017-06-27 Федеральное государственное бюджетное образовательное учреждение высшего образования "Саратовский государственный технический университет имени Гагарина Ю.А." (СГТУ имени Гагарина Ю.А.) Способ изготовления пленочного материала на основе смеси фаз VOx, где x=1,5-2,02
CN107188426A (zh) * 2017-05-02 2017-09-22 武汉理工大学 一种钨掺杂二氧化钒热致变色薄膜及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1116352A (en) * 1964-07-28 1968-06-06 Hitachi Ltd A resistor having an abruptly changing negative temperature coefficient
US3483110A (en) * 1967-05-19 1969-12-09 Bell Telephone Labor Inc Preparation of thin films of vanadium dioxide
US3660155A (en) * 1970-04-15 1972-05-02 Us Navy Method for preparing solid films
US3647664A (en) * 1970-09-08 1972-03-07 Energy Conversion Devices Inc Method of making a current controlling device including a vo2 film
US3751310A (en) * 1971-03-25 1973-08-07 Bell Telephone Labor Inc Germanium doped epitaxial films by the molecular beam method
US3765940A (en) * 1971-11-08 1973-10-16 Texas Instruments Inc Vacuum evaporated thin film resistors

Also Published As

Publication number Publication date
DE2436911A1 (de) 1975-02-13
SE393480B (sv) 1977-05-09
AU7180674A (en) 1975-10-16
FR2246036B1 (nl) 1978-01-27
BE818346A (fr) 1974-11-18
FR2246036A1 (nl) 1975-04-25
CA1021556A (en) 1977-11-29
JPS5050294A (nl) 1975-05-06
DE2436911B2 (de) 1977-06-30
SE7409651L (nl) 1975-02-03
GB1415149A (en) 1975-11-26
US3899407A (en) 1975-08-12

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Legal Events

Date Code Title Description
BV The patent application has lapsed