NL7312928A - - Google Patents

Info

Publication number
NL7312928A
NL7312928A NL7312928A NL7312928A NL7312928A NL 7312928 A NL7312928 A NL 7312928A NL 7312928 A NL7312928 A NL 7312928A NL 7312928 A NL7312928 A NL 7312928A NL 7312928 A NL7312928 A NL 7312928A
Authority
NL
Netherlands
Application number
NL7312928A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7312928A publication Critical patent/NL7312928A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/157—Special diffusion and profiles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
NL7312928A 1972-09-20 1973-09-19 NL7312928A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47093600A JPS4951879A (de) 1972-09-20 1972-09-20

Publications (1)

Publication Number Publication Date
NL7312928A true NL7312928A (de) 1974-03-22

Family

ID=14086796

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7312928A NL7312928A (de) 1972-09-20 1973-09-19

Country Status (6)

Country Link
US (1) US3891468A (de)
JP (1) JPS4951879A (de)
DE (1) DE2347424A1 (de)
FR (1) FR2200621B1 (de)
GB (1) GB1450171A (de)
NL (1) NL7312928A (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021835A (en) * 1974-01-25 1977-05-03 Hitachi, Ltd. Semiconductor device and a method for fabricating the same
JPS5180177A (en) * 1975-01-08 1976-07-13 Hitachi Ltd Handotaisochino seizohoho
DE2507613C3 (de) * 1975-02-21 1979-07-05 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines invers betriebenen Transistors
US4038106A (en) * 1975-04-30 1977-07-26 Rca Corporation Four-layer trapatt diode and method for making same
US4011105A (en) * 1975-09-15 1977-03-08 Mos Technology, Inc. Field inversion control for n-channel device integrated circuits
US4035823A (en) * 1975-10-06 1977-07-12 Honeywell Inc. Stress sensor apparatus
US4017888A (en) * 1975-12-31 1977-04-12 International Business Machines Corporation Non-volatile metal nitride oxide semiconductor device
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
US4276095A (en) * 1977-08-31 1981-06-30 International Business Machines Corporation Method of making a MOSFET device with reduced sensitivity of threshold voltage to source to substrate voltage variations
US4350991A (en) * 1978-01-06 1982-09-21 International Business Machines Corp. Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance
US4266985A (en) * 1979-05-18 1981-05-12 Fujitsu Limited Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate
DE3003391C2 (de) * 1980-01-31 1984-08-30 Josef Dipl.-Phys. Dr. 8041 Fahrenzhausen Kemmer Strahlungsdetektor mit einem passivierten pn-Halbleiterübergang
US4315781A (en) * 1980-04-23 1982-02-16 Hughes Aircraft Company Method of controlling MOSFET threshold voltage with self-aligned channel stop
JPS56155572A (en) * 1980-04-30 1981-12-01 Sanyo Electric Co Ltd Insulated gate field effect type semiconductor device
US4656493A (en) * 1982-05-10 1987-04-07 General Electric Company Bidirectional, high-speed power MOSFET devices with deep level recombination centers in base region
US4474624A (en) * 1982-07-12 1984-10-02 Intel Corporation Process for forming self-aligned complementary source/drain regions for MOS transistors
US4519127A (en) * 1983-02-28 1985-05-28 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacturing a MESFET by controlling implanted peak surface dopants
US5111260A (en) * 1983-06-17 1992-05-05 Texax Instruments Incorporated Polysilicon FETs
US4575746A (en) * 1983-11-28 1986-03-11 Rca Corporation Crossunders for high density SOS integrated circuits
US5156990A (en) * 1986-07-23 1992-10-20 Texas Instruments Incorporated Floating-gate memory cell with tailored doping profile
US5036375A (en) * 1986-07-23 1991-07-30 Texas Instruments Incorporated Floating-gate memory cell with tailored doping profile
US4979005A (en) * 1986-07-23 1990-12-18 Texas Instruments Incorporated Floating-gate memory cell with tailored doping profile
US4948746A (en) * 1988-03-04 1990-08-14 Harris Corporation Isolated gate MESFET and method of making and trimming
US5010377A (en) * 1988-03-04 1991-04-23 Harris Corporation Isolated gate MESFET and method of trimming
GB2233822A (en) * 1989-07-12 1991-01-16 Philips Electronic Associated A thin film field effect transistor
JPH0369167A (ja) * 1989-08-08 1991-03-25 Nec Corp 埋め込み型ｐチャネルｍｏｓトランジスタ及びその製造方法
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
JP2729130B2 (ja) * 1992-04-16 1998-03-18 三菱電機株式会社 半導体装置の製造パラメタの設定方法及びその装置
KR960008735B1 (en) * 1993-04-29 1996-06-29 Samsung Electronics Co Ltd Mos transistor and the manufacturing method thereof
US5571737A (en) * 1994-07-25 1996-11-05 United Microelectronics Corporation Metal oxide semiconductor device integral with an electro-static discharge circuit
US7348227B1 (en) * 1995-03-23 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JPH08264798A (ja) * 1995-03-23 1996-10-11 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置作製方法
JPH10189920A (ja) * 1996-12-27 1998-07-21 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US7151017B2 (en) * 2001-01-26 2006-12-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7419892B2 (en) * 2005-12-13 2008-09-02 Cree, Inc. Semiconductor devices including implanted regions and protective layers and methods of forming the same
JP2011210901A (ja) * 2010-03-29 2011-10-20 Seiko Instruments Inc デプレッション型ｍｏｓトランジスタ
JP2012004471A (ja) * 2010-06-21 2012-01-05 Toshiba Corp 半導体装置及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
US3895966A (en) * 1969-09-30 1975-07-22 Sprague Electric Co Method of making insulated gate field effect transistor with controlled threshold voltage
US3725136A (en) * 1971-06-01 1973-04-03 Texas Instruments Inc Junction field effect transistor and method of fabrication
US3789504A (en) * 1971-10-12 1974-02-05 Gte Laboratories Inc Method of manufacturing an n-channel mos field-effect transistor
US3756862A (en) * 1971-12-21 1973-09-04 Ibm Proton enhanced diffusion methods
JPS507915A (de) * 1973-05-30 1975-01-27

Also Published As

Publication number Publication date
JPS4951879A (de) 1974-05-20
DE2347424A1 (de) 1974-04-18
FR2200621B1 (de) 1976-05-14
GB1450171A (en) 1976-09-22
US3891468A (en) 1975-06-24
FR2200621A1 (de) 1974-04-19

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