NL7308695A - - Google Patents

Info

Publication number
NL7308695A
NL7308695A NL7308695A NL7308695A NL7308695A NL 7308695 A NL7308695 A NL 7308695A NL 7308695 A NL7308695 A NL 7308695A NL 7308695 A NL7308695 A NL 7308695A NL 7308695 A NL7308695 A NL 7308695A
Authority
NL
Netherlands
Application number
NL7308695A
Other versions
NL167789B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7308695A publication Critical patent/NL7308695A/xx
Publication of NL167789B publication Critical patent/NL167789B/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408Address circuits
    • G11C11/4085Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
NL7308695.A 1972-06-30 1973-06-22 Adresseerstelsel voor een in een halfgeleiderplaatje gevormd geheugen. NL167789B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00267805A US3810124A (en) 1972-06-30 1972-06-30 Memory accessing system

Publications (2)

Publication Number Publication Date
NL7308695A true NL7308695A (US07223432-20070529-C00017.png) 1974-01-02
NL167789B NL167789B (nl) 1981-08-17

Family

ID=23020194

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7308695.A NL167789B (nl) 1972-06-30 1973-06-22 Adresseerstelsel voor een in een halfgeleiderplaatje gevormd geheugen.

Country Status (11)

Country Link
US (1) US3810124A (US07223432-20070529-C00017.png)
JP (2) JPS5636513B2 (US07223432-20070529-C00017.png)
CA (1) CA1028061A (US07223432-20070529-C00017.png)
CH (1) CH548084A (US07223432-20070529-C00017.png)
DD (1) DD104864A5 (US07223432-20070529-C00017.png)
ES (1) ES415975A1 (US07223432-20070529-C00017.png)
FR (1) FR2191202B1 (US07223432-20070529-C00017.png)
GB (1) GB1427156A (US07223432-20070529-C00017.png)
IT (1) IT983932B (US07223432-20070529-C00017.png)
NL (1) NL167789B (US07223432-20070529-C00017.png)
SU (1) SU654197A3 (US07223432-20070529-C00017.png)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752669B2 (US07223432-20070529-C00017.png) * 1973-11-14 1982-11-09
FR2258783B1 (US07223432-20070529-C00017.png) * 1974-01-25 1977-09-16 Valentin Camille
GB1502270A (en) * 1974-10-30 1978-03-01 Hitachi Ltd Word line driver circuit in memory circuit
JPS51147224A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Semiconductor memory
US4025908A (en) * 1975-06-24 1977-05-24 International Business Machines Corporation Dynamic array with clamped bootstrap static input/output circuitry
US4086662A (en) * 1975-11-07 1978-04-25 Hitachi, Ltd. Memory system with read/write control lines
JPS5827440Y2 (ja) * 1975-12-31 1983-06-14 富士通株式会社 ハンドウタイキオクカイロ
JPS5922316B2 (ja) * 1976-02-24 1984-05-25 株式会社東芝 ダイナミツクメモリ装置
US4074237A (en) * 1976-03-08 1978-02-14 International Business Machines Corporation Word line clamping circuit and decoder
JPS52155928A (en) * 1976-06-21 1977-12-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
US4188671A (en) * 1977-01-24 1980-02-12 Bell Telephone Laboratories, Incorporated Switched-capacitor memory
JPS544086A (en) * 1977-06-10 1979-01-12 Fujitsu Ltd Memory circuit unit
JPS55150189A (en) * 1979-05-10 1980-11-21 Nec Corp Memory circuit
JPS5847796B2 (ja) * 1979-05-26 1983-10-25 富士通株式会社 半導体メモリ装置
JPS5619585A (en) * 1979-07-26 1981-02-24 Toshiba Corp Semiconductor memory unit
US4357687A (en) * 1980-12-11 1982-11-02 Fairchild Camera And Instr. Corp. Adaptive word line pull down
JPS57212690A (en) * 1981-06-24 1982-12-27 Hitachi Ltd Dynamic mos memory device
JPS58153294A (ja) * 1982-03-04 1983-09-12 Mitsubishi Electric Corp 半導体記憶装置
JPS5948890A (ja) * 1982-09-10 1984-03-21 Nec Corp メモリ回路
JPS5960794A (ja) * 1982-09-29 1984-04-06 Fujitsu Ltd ダイナミツク型半導体記憶装置
JPS59116985A (ja) * 1982-11-29 1984-07-06 Fujitsu Ltd 半導体記憶装置
JPS6168865U (US07223432-20070529-C00017.png) * 1984-10-09 1986-05-12
JPH07105140B2 (ja) * 1988-12-16 1995-11-13 日本電気株式会社 半導体メモリ
DE69700241T2 (de) * 1996-03-01 1999-11-04 Mitsubishi Electric Corp Halbleiterspeichergerät, um Fehlfunktion durch Zeilenauswahlleitungsunterbrechung zu vermeiden
US5835419A (en) * 1996-03-01 1998-11-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with clamping circuit for preventing malfunction
DE19823956A1 (de) * 1998-05-28 1999-12-02 Siemens Ag Anordnung zur Übersprechdämpfung in Wortleitungen von DRAM-Schaltungen
US20070165479A1 (en) * 2006-01-17 2007-07-19 Norbert Rehm Local wordline driver scheme to avoid fails due to floating wordline in a segmented wordline driver scheme

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1549076A1 (de) * 1967-12-22 1971-01-21 Standard Elek K Lorenz Ag Assoziativer Speicher
US3699537A (en) * 1969-05-16 1972-10-17 Shell Oil Co Single-rail mosfet memory with capacitive storage
US3706977A (en) * 1971-11-11 1972-12-19 Ibm Functional memory storage cell

Also Published As

Publication number Publication date
ES415975A1 (es) 1976-05-16
DE2324300B2 (de) 1976-06-16
CH548084A (de) 1974-04-11
FR2191202A1 (US07223432-20070529-C00017.png) 1974-02-01
JPS5733629B2 (US07223432-20070529-C00017.png) 1982-07-17
CA1028061A (en) 1978-03-14
DD104864A5 (US07223432-20070529-C00017.png) 1974-03-20
FR2191202B1 (US07223432-20070529-C00017.png) 1976-05-28
NL167789B (nl) 1981-08-17
JPS5698786A (en) 1981-08-08
JPS4945649A (US07223432-20070529-C00017.png) 1974-05-01
US3810124A (en) 1974-05-07
SU654197A3 (ru) 1979-03-25
IT983932B (it) 1974-11-11
JPS5636513B2 (US07223432-20070529-C00017.png) 1981-08-25
DE2324300A1 (de) 1974-01-17
GB1427156A (en) 1976-03-10

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Legal Events

Date Code Title Description
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee