NL7115341A - - Google Patents

Info

Publication number
NL7115341A
NL7115341A NL7115341A NL7115341A NL7115341A NL 7115341 A NL7115341 A NL 7115341A NL 7115341 A NL7115341 A NL 7115341A NL 7115341 A NL7115341 A NL 7115341A NL 7115341 A NL7115341 A NL 7115341A
Authority
NL
Netherlands
Application number
NL7115341A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7115341A publication Critical patent/NL7115341A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/30Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7115341A 1971-03-22 1971-11-08 NL7115341A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2113720A DE2113720C3 (de) 1971-03-22 1971-03-22 Verfahren zur Durchmesserregelung beim tiegellosen Zonenschmelzen von Halbleiterstäben

Publications (1)

Publication Number Publication Date
NL7115341A true NL7115341A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-09-26

Family

ID=5802339

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7115341A NL7115341A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-03-22 1971-11-08

Country Status (11)

Country Link
US (1) US3757071A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5233042B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE781067A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA970255A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH538885A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2113720C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DK (1) DK140822B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2130453B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1373718A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT962055B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7115341A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2332968C3 (de) * 1973-06-28 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Steuerung des durchmessers eines Halbleiterstabes
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
US4185233A (en) * 1978-03-30 1980-01-22 General Electric Company High efficiency ballast system for gaseous discharge lamps
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
JPH0651599B2 (ja) * 1987-12-05 1994-07-06 信越半導体株式会社 浮遊帯域制御方法
IL163974A0 (en) * 2003-09-10 2005-12-18 Dana Corp Method for monitoring the performance of a magnetic pulse forming or welding process
DE102012108009B4 (de) * 2012-08-30 2016-09-01 Topsil Semiconductor Materials A/S Modellprädiktive Regelung des Zonenschmelz-Verfahrens
JP2014240338A (ja) * 2013-06-12 2014-12-25 信越半導体株式会社 半導体単結晶棒の製造方法
JP6642234B2 (ja) * 2016-04-20 2020-02-05 株式会社Sumco 単結晶の製造方法および装置

Also Published As

Publication number Publication date
JPS5233042B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1977-08-25
GB1373718A (en) 1974-11-13
DE2113720C3 (de) 1980-09-11
BE781067A (fr) 1972-07-17
FR2130453A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-11-03
DE2113720B2 (de) 1980-01-10
CA970255A (en) 1975-07-01
DK140822C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-05-12
FR2130453B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-04-11
US3757071A (en) 1973-09-04
DE2113720A1 (de) 1972-09-28
CH538885A (de) 1973-07-15
DK140822B (da) 1979-11-26
IT962055B (it) 1973-12-20

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