NL7103418A - - Google Patents

Info

Publication number
NL7103418A
NL7103418A NL7103418A NL7103418A NL7103418A NL 7103418 A NL7103418 A NL 7103418A NL 7103418 A NL7103418 A NL 7103418A NL 7103418 A NL7103418 A NL 7103418A NL 7103418 A NL7103418 A NL 7103418A
Authority
NL
Netherlands
Application number
NL7103418A
Other versions
NL144496B (nl
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL7103418A publication Critical patent/NL7103418A/xx
Publication of NL144496B publication Critical patent/NL144496B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL717103418A 1970-03-16 1971-03-15 Werkwijze en inrichting voor het laten groeien van een epitaxiaal kristal op een onderlaag. NL144496B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1992970A 1970-03-16 1970-03-16

Publications (2)

Publication Number Publication Date
NL7103418A true NL7103418A (fr) 1971-09-20
NL144496B NL144496B (nl) 1975-01-15

Family

ID=21795814

Family Applications (1)

Application Number Title Priority Date Filing Date
NL717103418A NL144496B (nl) 1970-03-16 1971-03-15 Werkwijze en inrichting voor het laten groeien van een epitaxiaal kristal op een onderlaag.

Country Status (8)

Country Link
US (1) US3648654A (fr)
JP (1) JPS528796B1 (fr)
BE (1) BE764314A (fr)
DE (1) DE2111946C3 (fr)
FR (1) FR2084643A5 (fr)
GB (1) GB1315298A (fr)
NL (1) NL144496B (fr)
SE (1) SE377054B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036317A1 (de) * 1980-09-26 1982-05-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und vorrichtung zur fluessigphasenepitaxie
JPS58148426A (ja) * 1982-03-01 1983-09-03 Semiconductor Res Found 成長装置
JP2001160540A (ja) * 1999-09-22 2001-06-12 Canon Inc 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池
JP4827107B2 (ja) * 2006-03-24 2011-11-30 日本碍子株式会社 窒化物単結晶の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1422545A (en) * 1920-06-01 1922-07-11 Ernest L Dayton Coating apparatus
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
BE624740A (fr) * 1961-11-15
DE1287047B (de) * 1965-02-18 1969-01-16 Siemens Ag Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht
US3491720A (en) * 1965-07-29 1970-01-27 Monsanto Co Epitaxial deposition reactor
US3382843A (en) * 1965-10-23 1968-05-14 Optical Coating Laboratory Inc Vacuum coating apparatus utilizing rotating sources
US3524426A (en) * 1968-02-29 1970-08-18 Libbey Owens Ford Glass Co Apparatus for coating by thermal evaporation
US3551219A (en) * 1968-05-09 1970-12-29 Bell Telephone Labor Inc Epitaxial growth technique
US3560276A (en) * 1968-12-23 1971-02-02 Bell Telephone Labor Inc Technique for fabrication of multilayered semiconductor structure
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase

Also Published As

Publication number Publication date
DE2111946C3 (de) 1974-03-07
FR2084643A5 (fr) 1971-12-17
NL144496B (nl) 1975-01-15
BE764314A (fr) 1971-09-16
DE2111946A1 (de) 1971-09-30
GB1315298A (en) 1973-05-02
JPS528796B1 (fr) 1977-03-11
DE2111946B2 (de) 1973-08-02
US3648654A (en) 1972-03-14
SE377054B (fr) 1975-06-23

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: WESTERN