NL7010208A - - Google Patents

Info

Publication number
NL7010208A
NL7010208A NL7010208A NL7010208A NL7010208A NL 7010208 A NL7010208 A NL 7010208A NL 7010208 A NL7010208 A NL 7010208A NL 7010208 A NL7010208 A NL 7010208A NL 7010208 A NL7010208 A NL 7010208A
Authority
NL
Netherlands
Application number
NL7010208A
Inventor
E Kooi
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL666614016A external-priority patent/NL153374B/xx
Priority claimed from NL7002384.A external-priority patent/NL159817B/xx
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7010208A priority Critical patent/NL7010208A/xx
Priority to CA117451A priority patent/CA933675A/en
Priority to GB186774A priority patent/GB1365281A/en
Priority to CA117580A priority patent/CA926029A/en
Priority to SE08804/71A priority patent/SE368479B/xx
Priority to GB3184371A priority patent/GB1363515A/en
Priority to CH1001271A priority patent/CH539949A/de
Priority to SE7108803A priority patent/SE383581B/xx
Priority to CH1001371A priority patent/CH542517A/de
Priority to CA117,581A priority patent/CA1102012A/en
Priority to GB3184571A priority patent/GB1353997A/en
Priority to SE08805/71A priority patent/SE368480B/xx
Priority to CH1000771A priority patent/CH533364A/de
Priority to DE19712133981 priority patent/DE2133981C3/de
Priority to BE769735A priority patent/BE769735A/xx
Priority to ES393041A priority patent/ES393041A1/es
Priority to DE2133980A priority patent/DE2133980C3/de
Priority to ES393039A priority patent/ES393039A2/es
Priority to AT594171A priority patent/AT344788B/de
Priority to ES393040A priority patent/ES393040A1/es
Priority to BE769733A priority patent/BE769733R/xx
Priority to DE2133982A priority patent/DE2133982C2/de
Priority to BE769734A priority patent/BE769734A/xx
Priority to FR7125298A priority patent/FR2098324B1/fr
Priority to FR7125299A priority patent/FR2098325B1/fr
Priority to FR7125297A priority patent/FR2098323B2/fr
Priority to IT26784/71A priority patent/IT995017B/it
Priority to JP46050732A priority patent/JPS5010101B1/ja
Priority to JP46050731A priority patent/JPS517550B1/ja
Publication of NL7010208A publication Critical patent/NL7010208A/xx
Priority to JP50141236A priority patent/JPS522273B2/ja
Priority to HK595/76*UA priority patent/HK59576A/xx
Priority to HK585/76*UA priority patent/HK58576A/xx
Priority to HK592/76*UA priority patent/HK59276A/xx
Priority to NLAANVRAGE8002038,A priority patent/NL176414C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
NL7010208A 1966-10-05 1970-07-10 NL7010208A (https=)

Priority Applications (34)

Application Number Priority Date Filing Date Title
NL7010208A NL7010208A (https=) 1966-10-05 1970-07-10
CA117451A CA933675A (en) 1970-07-10 1971-07-06 Method of manufacturing a semiconductor device and semiconductor device obtained by using the method
CH1000771A CH533364A (de) 1970-07-10 1971-07-07 Monolitische, intergrierte Schaltung
SE08805/71A SE368480B (https=) 1970-07-10 1971-07-07
GB3184371A GB1363515A (en) 1970-07-10 1971-07-07 Manufacture of semiconductor devices
CA117580A CA926029A (en) 1970-07-10 1971-07-07 Semiconductor device having a transistor
SE08804/71A SE368479B (https=) 1970-07-10 1971-07-07
GB186774A GB1365281A (en) 1970-07-10 1971-07-07 Manufacture of semiconductor devices
CH1001271A CH539949A (de) 1970-07-10 1971-07-07 Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung
SE7108803A SE383581B (sv) 1970-07-10 1971-07-07 Forfarande for framstellning av en halvledaranordning
CH1001371A CH542517A (de) 1970-07-10 1971-07-07 Halbleitervorrichtung mit einem Transistor und Verfahren zur Herstellung der Halbleitervorrichtung
CA117,581A CA1102012A (en) 1970-07-10 1971-07-07 Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same
GB3184571A GB1353997A (en) 1970-07-10 1971-07-07 Semiconductor integrated devices
DE2133982A DE2133982C2 (de) 1970-07-10 1971-07-08 Integriertes Halbleiterbauelement mit einer von einer vergrabenen Schicht gebildeten leitenden Verbindung
BE769734A BE769734A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur comportant un transistor
ES393041A ES393041A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
BE769735A BE769735A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur, en particulier circuit monolithique integre,et procede de fabrication de ce dispositif
DE19712133981 DE2133981C3 (de) 1970-07-10 1971-07-08 Halbleiterbauelement mit einem Halbleiterkörper mit einem Transistor und Verfahren zu seiner Herstellung
DE2133980A DE2133980C3 (de) 1966-10-05 1971-07-08 Verfahren zur Herstellung einer integrierten Halbleiterschaltung
ES393039A ES393039A2 (es) 1970-07-10 1971-07-08 Un metodo de fabricar un dispositivo semiconductor.
AT594171A AT344788B (de) 1970-07-10 1971-07-08 Verfahren zur herstellung einer integrierten monolithischen halbleiteranordnung
ES393040A ES393040A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
BE769733A BE769733R (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur et procede pour sa
IT26784/71A IT995017B (it) 1970-07-10 1971-07-09 Metodo di fabbricazione di un di spositivo semiconduttore e dispo sitivo semiconduttore ottenuto con l ausilio di tale metodo
FR7125297A FR2098323B2 (https=) 1966-10-05 1971-07-09
FR7125299A FR2098325B1 (https=) 1970-07-10 1971-07-09
FR7125298A FR2098324B1 (https=) 1970-07-10 1971-07-09
JP46050732A JPS5010101B1 (https=) 1970-07-10 1971-07-10
JP46050731A JPS517550B1 (https=) 1970-07-10 1971-07-10
JP50141236A JPS522273B2 (https=) 1970-07-10 1975-11-27
HK595/76*UA HK59576A (en) 1970-07-10 1976-09-23 Manufacture of semiconductor devices
HK585/76*UA HK58576A (en) 1970-07-10 1976-09-23 Improvements in and relating to semiconductor integrated devices
HK592/76*UA HK59276A (en) 1970-07-10 1976-09-23 Manufacture of semiconductor device
NLAANVRAGE8002038,A NL176414C (nl) 1970-07-10 1980-04-08 Werkwijze ter vervaardiging van een halfgeleiderinrichting.

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL666614016A NL153374B (nl) 1966-10-05 1966-10-05 Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
NL7002384.A NL159817B (nl) 1966-10-05 1970-02-19 Werkwijze ter vervaardiging van een halfgeleiderinrichting.
NL7010208A NL7010208A (https=) 1966-10-05 1970-07-10

Publications (1)

Publication Number Publication Date
NL7010208A true NL7010208A (https=) 1972-01-12

Family

ID=27351385

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7010208A NL7010208A (https=) 1966-10-05 1970-07-10

Country Status (2)

Country Link
DE (1) DE2133980C3 (https=)
NL (1) NL7010208A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886000A (en) * 1973-11-05 1975-05-27 Ibm Method for controlling dielectric isolation of a semiconductor device
FR2252638B1 (https=) * 1973-11-23 1978-08-04 Commissariat Energie Atomique
FR2341201A1 (fr) * 1976-02-16 1977-09-09 Radiotechnique Compelec Procede d'isolement entre regions d'un dispositif semiconducteur et dispositif ainsi obtenu

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3442011A (en) * 1965-06-30 1969-05-06 Texas Instruments Inc Method for isolating individual devices in an integrated circuit monolithic bar
NL153374B (nl) * 1966-10-05 1977-05-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
US3488564A (en) * 1968-04-01 1970-01-06 Fairchild Camera Instr Co Planar epitaxial resistors
US3649386A (en) * 1968-04-23 1972-03-14 Bell Telephone Labor Inc Method of fabricating semiconductor devices

Also Published As

Publication number Publication date
DE2133980C3 (de) 1983-12-22
DE2133980B2 (de) 1979-07-05
DE2133980A1 (de) 1972-01-13

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Legal Events

Date Code Title Description
BN A decision not to publish the application has become irrevocable