NL7006245A - - Google Patents

Info

Publication number
NL7006245A
NL7006245A NL7006245A NL7006245A NL7006245A NL 7006245 A NL7006245 A NL 7006245A NL 7006245 A NL7006245 A NL 7006245A NL 7006245 A NL7006245 A NL 7006245A NL 7006245 A NL7006245 A NL 7006245A
Authority
NL
Netherlands
Application number
NL7006245A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7006245A publication Critical patent/NL7006245A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/916—Autodoping control or utilization
NL7006245A 1969-05-08 1970-04-29 NL7006245A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR696914719A FR2041710B1 (enExample) 1969-05-08 1969-05-08

Publications (1)

Publication Number Publication Date
NL7006245A true NL7006245A (enExample) 1970-11-10

Family

ID=9033654

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7006245A NL7006245A (enExample) 1969-05-08 1970-04-29

Country Status (10)

Country Link
US (1) US3759760A (enExample)
JP (1) JPS4940106B1 (enExample)
AU (1) AU455243B1 (enExample)
BE (1) BE750088A (enExample)
CH (1) CH513515A (enExample)
DE (1) DE2019450C3 (enExample)
FR (1) FR2041710B1 (enExample)
GB (1) GB1308013A (enExample)
NL (1) NL7006245A (enExample)
SE (1) SE365902B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4202006A (en) * 1978-02-15 1980-05-06 Rca Corporation Semiconductor integrated circuit device
US4170501A (en) * 1978-02-15 1979-10-09 Rca Corporation Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition
US4168997A (en) * 1978-10-10 1979-09-25 National Semiconductor Corporation Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer
US4902633A (en) * 1988-05-09 1990-02-20 Motorola, Inc. Process for making a bipolar integrated circuit
JP3031117B2 (ja) * 1993-06-02 2000-04-10 日産自動車株式会社 半導体装置の製造方法
FR2766845B1 (fr) * 1997-07-31 1999-10-15 Sgs Thomson Microelectronics Procede d'epitaxie sur un substrat de silicium comprenant des zones fortement dopees a l'arsenic
CN104576498A (zh) * 2013-10-29 2015-04-29 北大方正集团有限公司 一种掩埋层的制作方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1541490A (fr) * 1966-10-21 1968-10-04 Philips Nv Dispositif semi-conducteur et procédé pour sa fabrication

Also Published As

Publication number Publication date
FR2041710B1 (enExample) 1974-06-14
CH513515A (de) 1971-09-30
US3759760A (en) 1973-09-18
AU455243B1 (en) 1974-11-04
JPS4940106B1 (enExample) 1974-10-31
FR2041710A1 (enExample) 1971-02-05
DE2019450A1 (de) 1970-11-12
DE2019450C3 (de) 1980-05-29
GB1308013A (en) 1973-02-21
DE2019450B2 (de) 1979-09-06
BE750088A (nl) 1970-11-06
SE365902B (enExample) 1974-04-01

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