FR2041710B1 - - Google Patents

Info

Publication number
FR2041710B1
FR2041710B1 FR696914719A FR6914719A FR2041710B1 FR 2041710 B1 FR2041710 B1 FR 2041710B1 FR 696914719 A FR696914719 A FR 696914719A FR 6914719 A FR6914719 A FR 6914719A FR 2041710 B1 FR2041710 B1 FR 2041710B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR696914719A
Other versions
FR2041710A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR696914719A priority Critical patent/FR2041710B1/fr
Priority to DE2019450A priority patent/DE2019450C3/de
Priority to NL7006245A priority patent/NL7006245A/xx
Priority to US00034490A priority patent/US3759760A/en
Priority to GB2157870A priority patent/GB1308013A/en
Priority to SE06174/70A priority patent/SE365902B/xx
Priority to AU14652/70A priority patent/AU455243B1/en
Priority to CH675470A priority patent/CH513515A/de
Priority to BE750088D priority patent/BE750088A/nl
Priority to JP45038369A priority patent/JPS4940106B1/ja
Publication of FR2041710A1 publication Critical patent/FR2041710A1/fr
Application granted granted Critical
Publication of FR2041710B1 publication Critical patent/FR2041710B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/916—Autodoping control or utilization
FR696914719A 1969-05-08 1969-05-08 Expired FR2041710B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR696914719A FR2041710B1 (fr) 1969-05-08 1969-05-08
DE2019450A DE2019450C3 (de) 1969-05-08 1970-04-22 Verfahren zur Herstellung einer Halbleiteranordnung
NL7006245A NL7006245A (fr) 1969-05-08 1970-04-29
US00034490A US3759760A (en) 1969-05-08 1970-05-04 Prevention of autodoping during the manufacturing of a semiconductor device
GB2157870A GB1308013A (en) 1969-05-08 1970-05-05 Methods of manufacturing semiconductor devices
SE06174/70A SE365902B (fr) 1969-05-08 1970-05-05
AU14652/70A AU455243B1 (en) 1969-05-08 1970-05-05 Method of manufacturing a semiconductor device
CH675470A CH513515A (de) 1969-05-08 1970-05-05 Halbleiteranordnung
BE750088D BE750088A (nl) 1969-05-08 1970-05-06 Werkwijze voor het vervaardigen van een halfgeleiderinrichting
JP45038369A JPS4940106B1 (fr) 1969-05-08 1970-05-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR696914719A FR2041710B1 (fr) 1969-05-08 1969-05-08

Publications (2)

Publication Number Publication Date
FR2041710A1 FR2041710A1 (fr) 1971-02-05
FR2041710B1 true FR2041710B1 (fr) 1974-06-14

Family

ID=9033654

Family Applications (1)

Application Number Title Priority Date Filing Date
FR696914719A Expired FR2041710B1 (fr) 1969-05-08 1969-05-08

Country Status (10)

Country Link
US (1) US3759760A (fr)
JP (1) JPS4940106B1 (fr)
AU (1) AU455243B1 (fr)
BE (1) BE750088A (fr)
CH (1) CH513515A (fr)
DE (1) DE2019450C3 (fr)
FR (1) FR2041710B1 (fr)
GB (1) GB1308013A (fr)
NL (1) NL7006245A (fr)
SE (1) SE365902B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4170501A (en) * 1978-02-15 1979-10-09 Rca Corporation Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition
US4202006A (en) * 1978-02-15 1980-05-06 Rca Corporation Semiconductor integrated circuit device
US4168997A (en) * 1978-10-10 1979-09-25 National Semiconductor Corporation Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer
US4902633A (en) * 1988-05-09 1990-02-20 Motorola, Inc. Process for making a bipolar integrated circuit
JP3031117B2 (ja) * 1993-06-02 2000-04-10 日産自動車株式会社 半導体装置の製造方法
FR2766845B1 (fr) * 1997-07-31 1999-10-15 Sgs Thomson Microelectronics Procede d'epitaxie sur un substrat de silicium comprenant des zones fortement dopees a l'arsenic
CN104576498A (zh) * 2013-10-29 2015-04-29 北大方正集团有限公司 一种掩埋层的制作方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1541490A (fr) * 1966-10-21 1968-10-04 Philips Nv Dispositif semi-conducteur et procédé pour sa fabrication

Also Published As

Publication number Publication date
DE2019450B2 (de) 1979-09-06
GB1308013A (en) 1973-02-21
SE365902B (fr) 1974-04-01
CH513515A (de) 1971-09-30
BE750088A (nl) 1970-11-06
DE2019450A1 (de) 1970-11-12
US3759760A (en) 1973-09-18
NL7006245A (fr) 1970-11-10
JPS4940106B1 (fr) 1974-10-31
FR2041710A1 (fr) 1971-02-05
AU455243B1 (en) 1974-11-04
DE2019450C3 (de) 1980-05-29

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Legal Events

Date Code Title Description
ST Notification of lapse