NL6909115A - - Google Patents

Info

Publication number
NL6909115A
NL6909115A NL6909115A NL6909115A NL6909115A NL 6909115 A NL6909115 A NL 6909115A NL 6909115 A NL6909115 A NL 6909115A NL 6909115 A NL6909115 A NL 6909115A NL 6909115 A NL6909115 A NL 6909115A
Authority
NL
Netherlands
Application number
NL6909115A
Other versions
NL161617C (nl
NL161617B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP43041769A external-priority patent/JPS5142472B1/ja
Priority claimed from JP92569A external-priority patent/JPS51839B1/ja
Application filed filed Critical
Publication of NL6909115A publication Critical patent/NL6909115A/xx
Publication of NL161617B publication Critical patent/NL161617B/xx
Application granted granted Critical
Publication of NL161617C publication Critical patent/NL161617C/xx

Links

Classifications

    • H10P14/6324—
    • H10P14/665—
    • H10P14/69391—
    • H10P14/69392—
    • H10P14/69393—
    • H10P14/69394—
    • H10W20/071—
    • H10W20/077—
    • H10W20/40—
    • H10W20/435—
    • H10W74/43—
    • H10P14/6314—
    • H10W20/072—
    • H10W20/092—
NL6909115.A 1968-06-17 1969-06-13 Halfgeleiderinrichting met vlak oppervlak en werkwijze voor het vervaardigen daarvan. NL161617C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP43041769A JPS5142472B1 (en:Method) 1968-06-17 1968-06-17
JP92569A JPS51839B1 (en:Method) 1968-12-28 1968-12-28

Publications (3)

Publication Number Publication Date
NL6909115A true NL6909115A (en:Method) 1969-12-19
NL161617B NL161617B (nl) 1979-09-17
NL161617C NL161617C (nl) 1980-02-15

Family

ID=26334042

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6909115.A NL161617C (nl) 1968-06-17 1969-06-13 Halfgeleiderinrichting met vlak oppervlak en werkwijze voor het vervaardigen daarvan.

Country Status (6)

Country Link
US (1) US3988214A (en:Method)
DE (2) DE1930669C2 (en:Method)
FR (1) FR2011079A1 (en:Method)
GB (1) GB1276745A (en:Method)
MY (1) MY7500214A (en:Method)
NL (1) NL161617C (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2074675A1 (en) * 1970-01-16 1971-10-08 Semi Conducteurs Mos transistors prodn - with improved resistance to cosmic radiation

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3437863B2 (ja) 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
US3865624A (en) * 1970-06-29 1975-02-11 Bell Telephone Labor Inc Interconnection of electrical devices
JPS5347669B1 (en:Method) * 1971-01-14 1978-12-22
JPS5347946Y2 (en:Method) * 1974-08-13 1978-11-16
US4005452A (en) * 1974-11-15 1977-01-25 International Telephone And Telegraph Corporation Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby
JPS588588B2 (ja) * 1975-05-28 1983-02-16 株式会社日立製作所 半導体集積回路
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
DE2642471A1 (de) * 1976-09-21 1978-03-23 Siemens Ag Verfahren zur herstellung von mehrlagenverdrahtungen bei integrierten halbleiterschaltkreisen
JPS5351985A (en) * 1976-10-22 1978-05-11 Hitachi Ltd Semiconductor wiring constitution
NL7702814A (nl) * 1977-03-16 1978-09-19 Philips Nv Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
US4278737A (en) 1978-08-04 1981-07-14 United States Borax & Chemical Corporation Anodizing aluminum
US4617193A (en) * 1983-06-16 1986-10-14 Digital Equipment Corporation Planar interconnect for integrated circuits
US5580825A (en) * 1993-09-20 1996-12-03 International Technology Exchange Corp. Process for making multilevel interconnections of electronic components
TW297142B (en:Method) 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
US6777763B1 (en) * 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP3030368B2 (ja) 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
EP1335422B1 (en) * 1995-03-24 2013-01-16 Shinko Electric Industries Co., Ltd. Process for making a chip sized semiconductor device
US6370502B1 (en) * 1999-05-27 2002-04-09 America Online, Inc. Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
US6586325B2 (en) * 2001-06-26 2003-07-01 Cosmos Vacuum Technology Corporation Process for making an electronic device having a multilevel structure
US8003513B2 (en) * 2002-09-27 2011-08-23 Medtronic Minimed, Inc. Multilayer circuit devices and manufacturing methods using electroplated sacrificial structures
US20040061232A1 (en) * 2002-09-27 2004-04-01 Medtronic Minimed, Inc. Multilayer substrate
US8563336B2 (en) 2008-12-23 2013-10-22 International Business Machines Corporation Method for forming thin film resistor and terminal bond pad simultaneously
CN110870067B (zh) * 2017-05-29 2024-04-02 芬兰国家技术研究中心股份公司 半导体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3169892A (en) * 1959-04-08 1965-02-16 Jerome H Lemelson Method of making a multi-layer electrical circuit
US3356858A (en) 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
US3337426A (en) * 1964-06-04 1967-08-22 Gen Dynamics Corp Process for fabricating electrical circuits
US3386894A (en) * 1964-09-28 1968-06-04 Northern Electric Co Formation of metallic contacts
US3351825A (en) * 1964-12-21 1967-11-07 Solitron Devices Semiconductor device having an anodized protective film thereon and method of manufacturing same
USB422695I5 (en:Method) * 1964-12-31 1900-01-01
FR1471636A (fr) * 1965-03-31 1967-03-03 Ibm Structure de transistor
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
FR1522101A (fr) * 1966-05-09 1968-04-19 Motorola Inc Circuit intégré monolithe
US3634203A (en) * 1969-07-22 1972-01-11 Texas Instruments Inc Thin film metallization processes for microcircuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2074675A1 (en) * 1970-01-16 1971-10-08 Semi Conducteurs Mos transistors prodn - with improved resistance to cosmic radiation

Also Published As

Publication number Publication date
DE1967363C2 (en:Method) 1988-02-18
US3988214A (en) 1976-10-26
NL161617C (nl) 1980-02-15
NL161617B (nl) 1979-09-17
FR2011079A1 (en:Method) 1970-02-27
MY7500214A (en) 1975-12-31
GB1276745A (en) 1972-06-07
DE1930669A1 (de) 1970-06-11
DE1930669C2 (de) 1986-11-27

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Legal Events

Date Code Title Description
TNT Modifications of names of proprietors of patents or applicants of examined patent applications

Owner name: NEC CORPORATION

NL80 Information provided on patent owner name for an already discontinued patent

Owner name: NIPPON ELECTR

V4 Discontinued because of reaching the maximum lifetime of a patent