NL6812711A - - Google Patents

Info

Publication number
NL6812711A
NL6812711A NL6812711A NL6812711A NL6812711A NL 6812711 A NL6812711 A NL 6812711A NL 6812711 A NL6812711 A NL 6812711A NL 6812711 A NL6812711 A NL 6812711A NL 6812711 A NL6812711 A NL 6812711A
Authority
NL
Netherlands
Application number
NL6812711A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6812711A publication Critical patent/NL6812711A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
NL6812711A 1967-09-15 1968-09-06 NL6812711A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66811567A 1967-09-15 1967-09-15

Publications (1)

Publication Number Publication Date
NL6812711A true NL6812711A (https=) 1969-03-18

Family

ID=24681078

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6812711A NL6812711A (https=) 1967-09-15 1968-09-06

Country Status (7)

Country Link
US (1) US3461357A (https=)
CH (1) CH481487A (https=)
DE (1) DE1764951B1 (https=)
FR (1) FR1578564A (https=)
GB (1) GB1233466A (https=)
NL (1) NL6812711A (https=)
SE (1) SE351748B (https=)

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* Cited by examiner, † Cited by third party
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US4008484A (en) * 1968-04-04 1977-02-15 Fujitsu Ltd. Semiconductor device having multilayered electrode structure
US3879840A (en) * 1969-01-15 1975-04-29 Ibm Copper doped aluminum conductive stripes and method therefor
US3838442A (en) * 1970-04-15 1974-09-24 Ibm Semiconductor structure having metallization inlaid in insulating layers and method for making same
US3675092A (en) * 1970-07-13 1972-07-04 Signetics Corp Surface controlled avalanche semiconductor device
US3668484A (en) * 1970-10-28 1972-06-06 Rca Corp Semiconductor device with multi-level metalization and method of making the same
US4005472A (en) * 1975-05-19 1977-01-25 National Semiconductor Corporation Method for gold plating of metallic layers on semiconductive devices
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
US4035827A (en) * 1976-04-29 1977-07-12 Rca Corporation Thermally ballasted semiconductor device
FR2350697A1 (fr) * 1976-05-06 1977-12-02 Cii Structure perfectionnee de circuits multicouches
EP0042943A1 (en) * 1980-07-02 1982-01-06 International Business Machines Corporation Multilayer integrated circuit substrate structure and process for making such structures
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
US4434434A (en) 1981-03-30 1984-02-28 International Business Machines Corporation Solder mound formation on substrates
JPS6136946A (ja) * 1984-07-30 1986-02-21 Nec Corp 半導体装置
US5170931A (en) * 1987-03-11 1992-12-15 International Business Machines Corporation Method and apparatus for mounting a flexible film semiconductor chip carrier on a circuitized substrate
US4788767A (en) * 1987-03-11 1988-12-06 International Business Machines Corporation Method for mounting a flexible film semiconductor chip carrier on a circuitized substrate
US5159535A (en) * 1987-03-11 1992-10-27 International Business Machines Corporation Method and apparatus for mounting a flexible film semiconductor chip carrier on a circuitized substrate
JPH0744188B2 (ja) * 1989-04-28 1995-05-15 株式会社東海理化電機製作所 バイポーラトランジスタ
US5281684A (en) * 1992-04-30 1994-01-25 Motorola, Inc. Solder bumping of integrated circuit die
US5767580A (en) * 1993-04-30 1998-06-16 Lsi Logic Corporation Systems having shaped, self-aligning micro-bump structures
US5477086A (en) * 1993-04-30 1995-12-19 Lsi Logic Corporation Shaped, self-aligning micro-bump structures
US5468984A (en) * 1994-11-02 1995-11-21 Texas Instruments Incorporated ESD protection structure using LDMOS diodes with thick copper interconnect
US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
EP0819318B1 (en) 1995-04-05 2003-05-14 Unitive International Limited A solder bump structure for a microelectronic substrate
US5789271A (en) * 1996-03-18 1998-08-04 Micron Technology, Inc. Method for fabricating microbump interconnect for bare semiconductor dice
US6078100A (en) * 1999-01-13 2000-06-20 Micron Technology, Inc. Utilization of die repattern layers for die internal connections
EP1031873A3 (en) 1999-02-23 2005-02-23 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6710446B2 (en) * 1999-12-30 2004-03-23 Renesas Technology Corporation Semiconductor device comprising stress relaxation layers and method for manufacturing the same
JP3568869B2 (ja) * 2000-02-28 2004-09-22 シャープ株式会社 半導体集積回路装置及びその製造方法
DE60108413T2 (de) 2000-11-10 2005-06-02 Unitive Electronics, Inc. Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür
JP3526548B2 (ja) * 2000-11-29 2004-05-17 松下電器産業株式会社 半導体装置及びその製造方法
US6863209B2 (en) 2000-12-15 2005-03-08 Unitivie International Limited Low temperature methods of bonding components
US6577002B1 (en) * 2001-11-29 2003-06-10 Sun Microsystems, Inc. 180 degree bump placement layout for an integrated circuit power grid
AU2003256360A1 (en) * 2002-06-25 2004-01-06 Unitive International Limited Methods of forming electronic structures including conductive shunt layers and related structures
US7531898B2 (en) 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US7547623B2 (en) 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
TWI225899B (en) 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US7049216B2 (en) * 2003-10-14 2006-05-23 Unitive International Limited Methods of providing solder structures for out plane connections
TW200603698A (en) 2004-04-13 2006-01-16 Unitive International Ltd Methods of forming solder bumps on exposed metal pads and related structures
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7932615B2 (en) 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
EP1837910A1 (fr) * 2006-03-21 2007-09-26 Stmicroelectronics Sa Puce de circuits integrés à plots externes decalés et procédé de fabrication d'une telle puce.
JP2008258499A (ja) * 2007-04-06 2008-10-23 Sanyo Electric Co Ltd 電極構造及び半導体装置
US8304909B2 (en) * 2007-12-19 2012-11-06 Intel Corporation IC solder reflow method and materials
US7928534B2 (en) * 2008-10-09 2011-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Bond pad connection to redistribution lines having tapered profiles
US7956442B2 (en) * 2008-10-09 2011-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Backside connection to TSVs having redistribution lines
US8736050B2 (en) 2009-09-03 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Front side copper post joint structure for temporary bond in TSV application
US8759949B2 (en) * 2009-04-30 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer backside structures having copper pillars
US8158489B2 (en) 2009-06-26 2012-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of TSV backside interconnects by modifying carrier wafers
US8174124B2 (en) 2010-04-08 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy pattern in wafer backside routing
US8492892B2 (en) * 2010-12-08 2013-07-23 International Business Machines Corporation Solder bump connections
US9698079B2 (en) * 2014-01-03 2017-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier structures between external electrical connectors
US10276402B2 (en) * 2016-03-21 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor package and manufacturing process thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3241931A (en) * 1963-03-01 1966-03-22 Rca Corp Semiconductor devices
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3290565A (en) * 1963-10-24 1966-12-06 Philco Corp Glass enclosed, passivated semiconductor with contact means of alternate layers of chromium, silver and chromium
US3266127A (en) * 1964-01-27 1966-08-16 Ibm Method of forming contacts on semiconductors
US3290570A (en) * 1964-04-28 1966-12-06 Texas Instruments Inc Multilevel expanded metallic contacts for semiconductor devices
US3409809A (en) * 1966-04-06 1968-11-05 Irc Inc Semiconductor or write tri-layered metal contact

Also Published As

Publication number Publication date
GB1233466A (https=) 1971-05-26
SE351748B (https=) 1972-12-04
US3461357A (en) 1969-08-12
CH481487A (de) 1969-11-15
FR1578564A (https=) 1969-08-14
DE1764951B1 (de) 1972-03-16

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