NL6617540A - - Google Patents
Info
- Publication number
- NL6617540A NL6617540A NL6617540A NL6617540A NL6617540A NL 6617540 A NL6617540 A NL 6617540A NL 6617540 A NL6617540 A NL 6617540A NL 6617540 A NL6617540 A NL 6617540A NL 6617540 A NL6617540 A NL 6617540A
- Authority
- NL
- Netherlands
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06Q—DECORATING TEXTILES
- D06Q1/00—Decorating textiles
- D06Q1/04—Decorating textiles by metallising
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Inorganic Chemistry (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Textile Engineering (AREA)
- Structural Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Optical Elements Other Than Lenses (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
- Laminated Bodies (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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GB19219/64A GB1104935A (en) | 1964-05-08 | 1964-05-08 | Improvements in or relating to a method of forming a layer of an inorganic compound |
GB2342164 | 1964-06-05 | ||
GB4896464 | 1964-12-02 | ||
GB40065 | 1965-01-05 | ||
GB46289/65A GB1149052A (en) | 1964-05-08 | 1965-11-02 | Method of altering the surface properties of polymer material |
GB52993/65A GB1136218A (en) | 1965-12-14 | 1965-12-14 | Improvements in or relating to the manufacture of semiconductor optical devices |
Publications (1)
Publication Number | Publication Date |
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NL6617540A true NL6617540A (xx) | 1967-06-15 |
Family
ID=27546444
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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NL6505915A NL6505915A (xx) | 1964-05-08 | 1965-05-10 | |
NL6617540A NL6617540A (xx) | 1964-05-08 | 1966-12-13 |
Family Applications Before (1)
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NL6505915A NL6505915A (xx) | 1964-05-08 | 1965-05-10 |
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US (1) | US3485666A (xx) |
BE (2) | BE663511A (xx) |
DE (2) | DE1521553B2 (xx) |
GB (2) | GB1104935A (xx) |
NL (2) | NL6505915A (xx) |
SE (1) | SE322391B (xx) |
Families Citing this family (76)
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US3698071A (en) * | 1968-02-19 | 1972-10-17 | Texas Instruments Inc | Method and device employing high resistivity aluminum oxide film |
US3629088A (en) * | 1968-07-11 | 1971-12-21 | Sperry Rand Corp | Sputtering method for deposition of silicon oxynitride |
US3637423A (en) * | 1969-02-10 | 1972-01-25 | Westinghouse Electric Corp | Pyrolytic deposition of silicon nitride films |
DE1954366C2 (de) * | 1969-10-29 | 1972-02-03 | Heraeus Gmbh W C | Verfahren und Vorrichtung zur Herstellung von harten UEberzuegen aus Titan- und/oder Tantalverbindungen |
DE2025779C3 (de) * | 1970-05-26 | 1980-11-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Abscheiden einer Schicht aus einer binären Verbindung an der Oberfläche eines Halbleiterkristalls |
GB1315479A (en) * | 1970-06-24 | 1973-05-02 | Licentia Gmbh | Method for manufacturing diodes |
DE2058931A1 (de) * | 1970-12-01 | 1972-06-08 | Licentia Gmbh | Verfahren zum Kontaktieren von Halbleiterzonen Auswertung |
US3669863A (en) * | 1970-12-28 | 1972-06-13 | Bell Telephone Labor Inc | Technique for the preparation of iron oxide films by cathodic sputtering |
US3761327A (en) * | 1971-03-19 | 1973-09-25 | Itt | Planar silicon gate mos process |
US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
FR2196296B1 (xx) * | 1972-08-21 | 1976-07-23 | Hennequin Franc Is | |
US3984587A (en) * | 1973-07-23 | 1976-10-05 | Rca Corporation | Chemical vapor deposition of luminescent films |
JPS5193874A (en) * | 1975-02-15 | 1976-08-17 | Handotaisochino seizohoho | |
US4003770A (en) * | 1975-03-24 | 1977-01-18 | Monsanto Research Corporation | Plasma spraying process for preparing polycrystalline solar cells |
US4317844A (en) * | 1975-07-28 | 1982-03-02 | Rca Corporation | Semiconductor device having a body of amorphous silicon and method of making the same |
US3974003A (en) * | 1975-08-25 | 1976-08-10 | Ibm | Chemical vapor deposition of dielectric films containing Al, N, and Si |
DE2658304C2 (de) * | 1975-12-24 | 1984-12-20 | Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa | Halbleitervorrichtung |
US4142004A (en) * | 1976-01-22 | 1979-02-27 | Bell Telephone Laboratories, Incorporated | Method of coating semiconductor substrates |
GB1548520A (en) * | 1976-08-27 | 1979-07-18 | Tokyo Shibaura Electric Co | Method of manufacturing a semiconductor device |
JPS5329076A (en) * | 1976-08-31 | 1978-03-17 | Toshiba Corp | Plasma treating apparatus of semiconductor substrates |
CA1080562A (en) * | 1977-02-10 | 1980-07-01 | Frederick D. King | Method of and apparatus for manufacturing an optical fibre with plasma activated deposition in a tube |
US4161743A (en) * | 1977-03-28 | 1979-07-17 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat |
US4217375A (en) * | 1977-08-30 | 1980-08-12 | Bell Telephone Laboratories, Incorporated | Deposition of doped silicon oxide films |
AU530905B2 (en) | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
GB1603949A (en) * | 1978-05-30 | 1981-12-02 | Standard Telephones Cables Ltd | Plasma deposit |
US4202928A (en) * | 1978-07-24 | 1980-05-13 | Rca Corporation | Updateable optical storage medium |
US4319803A (en) * | 1978-11-24 | 1982-03-16 | Hewlett-Packard Company | Optical fiber coating |
US4328646A (en) * | 1978-11-27 | 1982-05-11 | Rca Corporation | Method for preparing an abrasive coating |
DE2904171A1 (de) * | 1979-02-05 | 1980-08-14 | Siemens Ag | Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung |
US4232057A (en) * | 1979-03-01 | 1980-11-04 | International Business Machines Corporation | Semiconductor plasma oxidation |
US4234622A (en) * | 1979-04-11 | 1980-11-18 | The United States Of American As Represented By The Secretary Of The Army | Vacuum deposition method |
US4268711A (en) * | 1979-04-26 | 1981-05-19 | Optical Coating Laboratory, Inc. | Method and apparatus for forming films from vapors using a contained plasma source |
US4289797A (en) * | 1979-10-11 | 1981-09-15 | Western Electric Co., Incorporated | Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor |
DE2941559C2 (de) * | 1979-10-13 | 1983-03-03 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Verfahren zum Abscheiden von Silizium auf einem Substrat |
JPS5664441A (en) * | 1979-10-30 | 1981-06-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
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DE3167761D1 (en) * | 1980-01-16 | 1985-01-31 | Nat Res Dev | Method and apparatus for depositing coatings in a glow discharge |
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US4456978A (en) * | 1980-02-12 | 1984-06-26 | General Instrument Corp. | Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process |
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JPS57201527A (en) * | 1981-06-01 | 1982-12-10 | Toshiba Corp | Ion implantation method |
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CA1208162A (en) * | 1982-10-14 | 1986-07-22 | Dilip K. Nath | Plasma processed sinterable ceramics |
JPS59119733A (ja) * | 1982-12-24 | 1984-07-11 | Toshiba Corp | 半導体装置 |
US4430361A (en) | 1983-02-02 | 1984-02-07 | Rca Corporation | Apparatus and method for preparing an abrasive coated substrate |
JPH06105779B2 (ja) * | 1983-02-28 | 1994-12-21 | 双葉電子工業株式会社 | 半導体装置及びその製造方法 |
JPS59179152A (ja) * | 1983-03-31 | 1984-10-11 | Agency Of Ind Science & Technol | アモルファスシリコン半導体薄膜の製造方法 |
US5780313A (en) | 1985-02-14 | 1998-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
JPS60191269A (ja) * | 1984-03-13 | 1985-09-28 | Sharp Corp | 電子写真感光体製造装置 |
DE3413019A1 (de) * | 1984-04-06 | 1985-10-17 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren zum aufbringen einer duennen, transparenten schicht auf der oberflaeche optischer elemente |
US4579609A (en) * | 1984-06-08 | 1986-04-01 | Massachusetts Institute Of Technology | Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition |
US4568614A (en) * | 1984-06-27 | 1986-02-04 | Energy Conversion Devices, Inc. | Steel article having a disordered silicon oxide coating thereon and method of preparing the coating |
JPS61117841A (ja) * | 1984-11-14 | 1986-06-05 | Hitachi Ltd | シリコン窒化膜の形成方法 |
DE3442208C3 (de) * | 1984-11-19 | 1998-06-10 | Leybold Ag | Verfahren und Vorrichtung zum Herstellen harter Kohlenstoffschichten |
JPH0752718B2 (ja) | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
FR2580864B1 (fr) * | 1984-12-18 | 1987-05-22 | Thomson Csf | Couche barriere au bombardement ionique pour tube a vide |
GB2175016B (en) * | 1985-05-11 | 1990-01-24 | Barr & Stroud Ltd | Optical coating |
US4659401A (en) * | 1985-06-10 | 1987-04-21 | Massachusetts Institute Of Technology | Growth of epitaxial films by plasma enchanced chemical vapor deposition (PE-CVD) |
US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US5427824A (en) * | 1986-09-09 | 1995-06-27 | Semiconductor Energy Laboratory Co., Ltd. | CVD apparatus |
KR910003742B1 (ko) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
GB8814922D0 (en) * | 1988-06-23 | 1988-07-27 | Pilkington Plc | Coatings on glass |
DE3902628A1 (de) * | 1989-01-30 | 1990-08-02 | Hauni Elektronik Gmbh | Duennschichtmaterial fuer sensoren oder aktuatoren und verfahren zu dessen herstellung |
US5204138A (en) * | 1991-12-24 | 1993-04-20 | International Business Machines Corporation | Plasma enhanced CVD process for fluorinated silicon nitride films |
FR2704558B1 (fr) * | 1993-04-29 | 1995-06-23 | Air Liquide | Procede et dispositif pour creer un depot d'oxyde de silicium sur un substrat solide en defilement. |
US5680663A (en) * | 1994-02-07 | 1997-10-28 | Mitchell; Wesley Wayne | Method and apparatus for cooking and dispensing starch |
US6898359B2 (en) * | 2001-04-12 | 2005-05-24 | Omniguide Communications | High index-contrast fiber waveguides and applications |
US20040141702A1 (en) | 2002-11-22 | 2004-07-22 | Vladimir Fuflyigin | Dielectric waveguide and method of making the same |
JP4052155B2 (ja) * | 2003-03-17 | 2008-02-27 | ウシオ電機株式会社 | 極端紫外光放射源及び半導体露光装置 |
WO2006133730A1 (en) * | 2005-06-16 | 2006-12-21 | Innovative Systems & Technologies | Method for producing coated polymer |
US9863725B1 (en) | 2012-02-29 | 2018-01-09 | The United States Of America As Represented By The Secretary Of The Air Force | Systems and methods for thermal management through use of ammonium carbamate |
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DE657903C (de) * | 1935-11-05 | 1938-03-16 | Bernhard Berghaus | Verfahren zum Vergueten oder metallischen UEberziehen von Gegenstaenden metallischer oder nichtmetallischer Art mittels Lichtbogens |
US2960594A (en) * | 1958-06-30 | 1960-11-15 | Plasma Flame Corp | Plasma flame generator |
GB915771A (en) * | 1959-01-12 | 1963-01-16 | Ici Ltd | Method of conducting gaseous chemical reactions |
US3108900A (en) * | 1959-04-13 | 1963-10-29 | Cornelius A Papp | Apparatus and process for producing coatings on metals |
US3246114A (en) * | 1959-12-14 | 1966-04-12 | Matvay Leo | Process for plasma flame formation |
NL128054C (xx) * | 1963-01-29 |
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-
1965
- 1965-05-03 US US452487A patent/US3485666A/en not_active Expired - Lifetime
- 1965-05-05 SE SE5871/65A patent/SE322391B/xx unknown
- 1965-05-06 BE BE663511D patent/BE663511A/xx unknown
- 1965-05-06 DE DE19651521553 patent/DE1521553B2/de active Pending
- 1965-05-10 NL NL6505915A patent/NL6505915A/xx unknown
- 1965-11-02 GB GB46289/65A patent/GB1149052A/en not_active Expired
-
1966
- 1966-12-03 DE DE1966D0051706 patent/DE1521216A1/de active Pending
- 1966-12-13 NL NL6617540A patent/NL6617540A/xx unknown
- 1966-12-13 BE BE691101D patent/BE691101A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE1521553A1 (de) | 1969-07-24 |
US3485666A (en) | 1969-12-23 |
SE322391B (xx) | 1970-04-06 |
DE1521216A1 (de) | 1969-07-24 |
GB1104935A (en) | 1968-03-06 |
BE691101A (xx) | 1967-06-13 |
NL6505915A (xx) | 1965-11-09 |
BE663511A (xx) | 1965-11-08 |
DE1521553B2 (de) | 1971-05-13 |
GB1149052A (en) | 1969-04-16 |