NL6501745A - - Google Patents
Info
- Publication number
- NL6501745A NL6501745A NL6501745A NL6501745A NL6501745A NL 6501745 A NL6501745 A NL 6501745A NL 6501745 A NL6501745 A NL 6501745A NL 6501745 A NL6501745 A NL 6501745A NL 6501745 A NL6501745 A NL 6501745A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB378564A GB1036164A (en) | 1962-04-16 | 1964-01-29 | Improvements in or relating to semiconductor devices |
GB3786/64A GB1036165A (en) | 1962-05-25 | 1964-01-29 | Improvements in or relating to semiconductor devices |
GB610064A GB1036166A (en) | 1964-02-13 | 1964-02-13 | Improvements in or relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6501745A true NL6501745A (me) | 1965-08-16 |
Family
ID=27254326
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6501141A NL6501141A (me) | 1964-01-29 | 1965-01-29 | |
NL6501142A NL6501142A (me) | 1964-01-29 | 1965-01-29 | |
NL6501745A NL6501745A (me) | 1964-01-29 | 1965-02-12 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6501141A NL6501141A (me) | 1964-01-29 | 1965-01-29 | |
NL6501142A NL6501142A (me) | 1964-01-29 | 1965-01-29 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3324357A (me) |
BE (1) | BE659624A (me) |
DE (2) | DE1514736C3 (me) |
NL (3) | NL6501141A (me) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1514881C3 (de) * | 1965-10-15 | 1975-05-28 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Verfahren zum Kontaktieren eines Halbleiterbauelementes |
US3474358A (en) * | 1966-01-18 | 1969-10-21 | Sanders Associates Inc | Multiple-path electronic component |
US3437883A (en) * | 1966-12-09 | 1969-04-08 | Bunker Ramo | Micromodular electronic package utilizing cantilevered support leads |
GB1258580A (me) * | 1967-12-28 | 1971-12-30 | ||
US3636619A (en) * | 1969-06-19 | 1972-01-25 | Teledyne Inc | Flip chip integrated circuit and method therefor |
US3909319A (en) * | 1971-02-23 | 1975-09-30 | Shohei Fujiwara | Planar structure semiconductor device and method of making the same |
NL7111031A (me) * | 1971-08-11 | 1973-02-13 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2668867A (en) * | 1952-03-21 | 1954-02-09 | Vitro Corp Of America | Photocell construction |
US2799814A (en) * | 1953-09-01 | 1957-07-16 | Sylvania Electric Prod | Germanium photodiode |
US2965962A (en) * | 1954-12-07 | 1960-12-27 | Rca Corp | Hermetic seal and method of making the same |
US2888736A (en) * | 1955-03-31 | 1959-06-02 | Raytheon Mfg Co | Transistor packages |
US2897377A (en) * | 1955-06-20 | 1959-07-28 | Rca Corp | Semiconductor surface treatments and devices made thereby |
US2862160A (en) * | 1955-10-18 | 1958-11-25 | Hoffmann Electronics Corp | Light sensitive device and method of making the same |
US3021461A (en) * | 1958-09-10 | 1962-02-13 | Gen Electric | Semiconductor device |
US2948835A (en) * | 1958-10-21 | 1960-08-09 | Texas Instruments Inc | Transistor structure |
US3225416A (en) * | 1958-11-20 | 1965-12-28 | Int Rectifier Corp | Method of making a transistor containing a multiplicity of depressions |
DE1154874C2 (de) * | 1960-04-26 | 1964-04-09 | Heinrich Menzel | Transistor fuer Hochfrequenzschaltungen |
US3159775A (en) * | 1960-11-30 | 1964-12-01 | Sylvania Electric Prod | Semiconductor device and method of manufacture |
NL272139A (me) * | 1960-12-15 | 1900-01-01 | ||
US3241010A (en) * | 1962-03-23 | 1966-03-15 | Texas Instruments Inc | Semiconductor junction passivation |
US3178621A (en) * | 1962-05-01 | 1965-04-13 | Mannes N Glickman | Sealed housing for electronic elements |
US3184658A (en) * | 1962-05-22 | 1965-05-18 | Texas Instruments Inc | Semiconductor device and header combination |
US3271625A (en) * | 1962-08-01 | 1966-09-06 | Signetics Corp | Electronic package assembly |
US3239719A (en) * | 1963-07-08 | 1966-03-08 | Sperry Rand Corp | Packaging and circuit connection means for microelectronic circuitry |
-
1964
- 1964-12-28 US US421178A patent/US3324357A/en not_active Expired - Lifetime
-
1965
- 1965-01-21 DE DE1514736A patent/DE1514736C3/de not_active Expired
- 1965-01-29 NL NL6501141A patent/NL6501141A/xx unknown
- 1965-01-29 NL NL6501142A patent/NL6501142A/xx unknown
- 1965-02-06 DE DE19651514742 patent/DE1514742A1/de active Pending
- 1965-02-12 BE BE659624D patent/BE659624A/xx unknown
- 1965-02-12 NL NL6501745A patent/NL6501745A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE1514736A1 (de) | 1969-02-20 |
US3324357A (en) | 1967-06-06 |
DE1514736C3 (de) | 1975-10-30 |
NL6501142A (me) | 1965-07-30 |
DE1514742A1 (de) | 1969-08-14 |
BE659624A (me) | 1965-08-12 |
DE1514736B2 (de) | 1975-03-20 |
NL6501141A (me) | 1965-07-30 |